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Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency 94 9308 13623 BFR90A Marking: BFR90A Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO2VCollector current IC 30 mA Total power dissipatio...
Author: Perseo Cerda Shared: 8/19/19
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Silicon NPN Planar RF Transistor

Electrostatic sensitive device. Observe precautions for handling.

Applications

RF amplifier up to GHz range specially for wide band antenna amplifier.

Features

High power gain Low noise figure High transition frequency 94 9308 13623 BFR90A Marking: BFR90A Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base

Absolute Maximum Ratings

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO2VCollector current IC 30 mA Total power dissipation Tamb ≤ 60 C Ptot 300 mW Junction temperature Tj 150 C Storage temperature range Tstg –65 to +150 C

Maximum Thermal Resistance

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 RthJA 300 K/W plated with 35m Cu Rev. 3, 20-Jan-99 1 (9),

Electrical DC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 20 V, VBE = 0 ICES 100 A Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10 A Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 V DC forward current transfer ratio VCE = 10 V, IC = 14 mA hFE 50 100 150

Electrical AC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz fT 6 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.3 pF Collector-emitter VCE = 10 V, f = 1 MHz Cce 0.25 pF capacitance Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.9 pF Noise figure VCE = 10 V, IC = 2 mA, f = 800 MHz, F 1.8 dB ZS = 50 Power gain VCE = 10 V, IC = 14 mA, ZL = ZLopt, Gpe 16 dB f = 800 MHz Linear output voltage – two VCE = 10 V, IC = 14 mA, dIM = 60 dB, V1 = V2 120 mV tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP3 24 dBm 2 (9) Rev. 3, 20-Jan-99,

Common Emitter S–Parameters

Z0 = 50 Tamb = 25C, unless otherwise specified S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.90 –17.7 6.25 165.4 0.02 81.1 0.98 –6.8 300 0.80 –50.4 5.51 140.9 0.05 65.5 0.91 –18.2 500 0.67 –78.1 4.66 121.6 0.07 56.7 0.84 –25.8 800 0.52 –111.2 3.56 99.9 0.08 51.2 0.77 –33.8 2 1000 0.45 –128.8 2.99 89.0 0.09 51.0 0.75 –38.4 1200 0.40 –144.1 2.58 80.3 0.10 52.1 0.74 –42.7 1500 0.34 –164.2 2.11 69.3 0.11 54.6 0.74 –49.4 1800 0.30 176.6 1.80 59.3 0.12 57.8 0.75 –56.3 2000 0.28 165.9 1.64 54.2 0.13 59.4 0.76 –61.0 100 0.77 –27.0 13.24 156.9 0.02 76.2 0.95 –10.9 300 0.56 –69.4 9.72 125.0 0.04 63.9 0.79 –23.5 500 0.41 –97.4 7.01 106.7 0.05 61.8 0.70 –28.5 800 0.30 –126.9 4.76 89.9 0.07 63.5 0.65 –34.1551000 0.26 –142.7 3.89 81.8 0.08 64.6 0.64 –38.3 1200 0.24 –155.8 3.29 75.1 0.10 65.7 0.63 –42.5 1500 0.21 –174.3 2.67 66.5 0.12 66.2 0.64 –49.3 1800 0.19 167.7 2.27 58.1 0.14 66.0 0.66 –56.2 2000 0.18 158.7 2.06 53.8 0.16 65.5 0.67 –60.6 100 0.61 –38.3 20.89 147.5 0.02 74.8 0.89 –15.0 300 0.36 –85.3 12.29 113.4 0.03 67.7 0.68 –24.6 500 0.26 –111.7 8.10 98.2 0.05 69.4 0.61 –27.5 800 0.20 –139.9 5.28 84.9 0.07 71.4 0.58 –32.8 10 1000 0.18 –154.3 4.28 78.0 0.08 71.8 0.58 –37.0 1200 0.17 –166.5 3.61 72.3 0.10 71.6 0.58 –41.5 1500 0.16 177.7 2.91 64.7 0.12 70.3 0.59 –48.7 1800 0.14 160.4 2.48 57.1 0.15 68.7 0.61 –55.7 2000 0.14 153.6 2.26 53.1 0.17 67.5 0.62 –60.4 Rev. 3, 20-Jan-99 3 (9), S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.51 –44.8 24.51 142.5 0.01 74.5 0.86 –16.7 300 0.28 –93.9 13.01 108.9 0.03 71.0 0.65 –24.1 500 0.20 –120.2 8.36 95.3 0.05 72.9 0.59 –26.2 800 0.17 –147.3 5.40 83.0 0.07 74.0 0.57 –31.8 14 1000 0.15 –160.1 4.36 76.6 0.08 74.0 0.57 –36.2 1200 0.15 –172.1 3.69 71.3 0.10 73.4 0.57 –40.7 1500 0.14 172.8 2.98 63.9 0.13 71.7 0.58 –48.0 1800 0.13 155.7 2.52 56.5 0.15 69.8 0.60 –55.1 2000 0.13 147.1 2.29 52.8 0.17 68.3 0.61 –59.8 100 0.41 –53.2 27.71 137.2 0.01 74.0 0.82 –18.0 300 0.22 –105.4 13.38 104.9 0.03 74.1 0.62 –22.9 500 0.17 –131.2 8.45 92.6 0.04 75.6 0.58 –24.8 800 0.15 –156.4 5.41 81.3 0.07 76.1 0.56 –30.7 5 20 1000 0.14 –170.4 4.36 75.2 0.09 75.4 0.56 –35.3 1200 0.14 177.4 3.68 69.8 0.10 74.5 0.57 –40.0 1500 0.14 164.4 2.96 62.5 0.13 72.5 0.58 –47.3 1800 0.14 147.5 2.51 55.4 0.15 70.4 0.59 –54.5 2000 0.13 141.0 2.28 51.5 0.17 68.8 0.60 –59.3 100 0.30 –67.7 29.72 131.4 0.01 74.3 0.78 –18.4 300 0.19 –125.3 13.17 101.2 0.03 76.3 0.61 –20.7 500 0.16 –149.8 8.19 90.0 0.04 78.0 0.58 –22.8 800 0.16 –171.3 5.23 79.2 0.07 77.8 0.57 –29.0 30 1000 0.16 177.6 4.21 73.3 0.08 77.1 0.57 –33.9 1200 0.16 167.5 3.54 68.2 0.10 76.0 0.58 –38.6 1500 0.16 156.2 2.85 60.9 0.126 73.9 0.59 –46.1 1800 0.16 139.1 2.41 53.8 0.15 71.7 0.61 –53.5 2000 0.16 133.3 2.19 49.9 0.17 70.0 0.62 –58.3 4 (9) Rev. 3, 20-Jan-99, S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.92 –16.7 6.23 166.0 0.01 80.6 0.98 –5.7 300 0.87 –47.6 5.55 142.1 0.03 67.1 0.93 –15.5 500 0.69 –74.0 4.75 123.3 0.05 58.8 0.87 –22.2 800 0.53 –106.0 3.67 101.9 0.06 54.1 0.82 –29.5 2 1000 0.45 –122.8 3.10 90.9 0.07 54.4 0.80 –33.9 1200 0.39 –138.0 2.67 82.3 0.08 56.0 0.79 –38.0 1500 0.33 –158.2 2.19 71.2 0.09 59.8 0.80 –44.3 1800 0.29 –177.6 1.87 61.2 0.10 63.6 0.81 –50.8 2000 0.27 172.2 1.70 56.1 0.11 65.5 0.83 –55.3 100 0.80 –24.7 13.17 158.0 0.01 77.5 0.96 –8.8 300 0.58 –63.9 9.89 126.8 0.03 65.7 0.83 –19.3 500 0.43 –89.9 7.21 108.5 0.04 63.5 0.76 –23.7 800 0.30 –117.6 4.94 91.6 0.06 65.9 0.72 –29.2 5 1000 0.26 –132.1 4.04 83.4 0.07 67.5 0.71 –33.2 1200 0.22 –145.9 3.42 76.8 0.08 69.1 0.71 –37.2 1500 0.19 –163.0 2.77 68.0 0.10 70.2 0.72 –43.6 1800 0.17 177.9 2.36 59.8 0.12 70.7 0.79 –50.3 2000 0.15 168.8 2.15 55.6 0.13 70.4 0.75 –54.7 100 0.65 –34.2 20.73 149.1 0.01 74.8 0.92 –11.8 300 0.39 –77.0 12.60 115.1 0.03 68.7 0.75 –19.8 500 0.27 –99.8 8.38 99.9 0.04 70.7 0.69 –22.6 800 0.19 –124.7 5.50 86.3 0.06 73.2 0.67 –27.8 10 1000 0.17 –138.1 4.45 79.4 0.07 74.3 0.67 –31.9 1200 0.15 –151.4 3.76 74.0 0.08 74.2 0.67 –36.2 1500 0.13 –167.7 3.04 66.4 0.11 74.1 0.68 –42.7 1800 0.18 174.5 2.58 58.8 0.13 73.1 0.70 –49.5 2000 0.11 165.6 2.35 54.8 0.14 72.3 0.72 –53.9 100 0.56 –39.9 24.49 144.2 0.01 74.3 0.89 –13.1 300 0.31 –83.1 13.40 110.5 0.03 71.4 0.72 –19.3 500 0.21 –104.9 8.66 96.8 0.04 74.1 0.67 –21.6 800 0.16 –129.3 5.62 84.4 0.06 76.0 0.66 –26.9 14 1000 0.14 –142.2 4.55 78.0 0.07 76.3 0.66 –31.0 1200 0.13 –155.9 3.83 72.7 0.08 76.1 0.66 –35.5 1500 0.12 –170.8 3.10 65.4 0.10 75.3 0.68 –42.2 1800 0.11 169.7 2.63 58.1 0.13 74.0 0.70 –49.1 2000 0.11 162.3 2.39 54.3 0.14 73.0 0.71 –53.5 Rev. 3, 20-Jan-99 5 (9),

Typical Characteristics (Tamb = 25C unless otherwise specified)

400 1.0 0.8 250 0.6 150 0.4 0.2 f=1MHz00020 40 60 80 100 120 140 16004812 16 20 12845 Tamb – Ambient Temperature ( °C ) 12890 VCB – Collector Base Voltage ( V ) Figure 1. Total Power Dissipation vs. Figure 3. Collector Base Capacitance vs. Ambient Temperature Collector Base Voltage 6000 3.5 5000 3.0 2.5 2.0 1.5 1.0 VCE=10V 1000 VCE=10V f=800MHz f=500MHz 0.5 ZS=50000510 15 20 25 300510 15 20 25 30 12889 IC – Collector Current ( mA ) 12891 IC – Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current 6 (9) Rev. 3, 20-Jan-99fT– Transition Frequency ( MHz ) Ptot– Total Power Dissipation ( mW ) F – Noise Figure ( dB ) Ccb– Collector Base Capacitance ( pF ),

VCE = 10 V, IC = 14 mA , Z0 = 50 S11 S12

j 90° 120° 60° j0.5 j2 2.0 GHz 150° 30° j0.2 j5 1.0 2.0 GHz 0 ÁÁ0.2ÁÁ0.5 Á1ÁÁÁÁÁ 0.12 5 180° 0.08 0.16 0° 1.0

ÁÁÁÁÁÁÁÁÁÁ

–j0.2 0.3 0.1 –j5 –150° –30° –j0.5 –j2 –120° –60° 13 510 –j 13 511 –90° Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient

S21 S22

90° j 120° 60° 0.1 j0.5 j2 0.3 150° 30° j0.2 j5 0.8 180° 2.0 GHz 8 16 0° 0 ÁÁ0.2ÁÁ0.5ÁÁ1 ÁÁ2 Á5Á 0.1 ÁÁÁÁÁÁÁÁÁ0.5Á 1.0 –j0.2 –j5 –150° –30° 2.0 GHz –j0.5 –j2 –120° –60° 13 512 –90° 13 513 –j Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient Rev. 3, 20-Jan-99 7 (9),

Dimensions of BFR90A in mm

96 12244 8 (9) Rev. 3, 20-Jan-99,

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Rev. 3, 20-Jan-99 9 (9)]
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