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Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave fre- quencies. Features Small feedback capacitance Low noise figure High transition frequency1113 581 13 581 94 9280 95105272332BFQ67 Marking: V2 BFQ67R Marking: R67 Plastic case (SOT 23) Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 = Collector, 2 = Base, 3 = Emitter 13 652 13 57023BFQ67W Marking: WV2 Plastic case (SOT 323)...
Author: Perseo Cerda Shared: 8/19/19
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Silicon NPN Planar RF Transistor

Electrostatic sensitive device. Observe precautions for handling.

Applications

Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave fre- quencies.

Features

Small feedback capacitance Low noise figure High transition frequency1113 581 13 581 94 9280 95105272332BFQ67 Marking: V2 BFQ67R Marking: R67 Plastic case (SOT 23) Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 = Collector, 2 = Base, 3 = Emitter 13 652 13 57023BFQ67W Marking: WV2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 2.5 V Collector current IC 50 mA Total power dissipation Tamb ≤ 60 C Ptot 200 mW Junction temperature Tj 150 C Storage temperature range Tstg –65 to +150 C Rev. 3, 20-Jan-99 1 (11),

Maximum Thermal Resistance

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 RthJA 450 K/W plated with 35m Cu

Electrical DC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 20 V, VBE = 0 ICES 100 A Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO1ACollector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 10 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V DC forward current transfer ratio VCE = 5 V, IC = 15 mA hFE 65 100 150

Electrical AC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency VCE = 8 V, IC = 15 mA, f = 500 MHz fT 7.5 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.4 pF Collector-emitter capacitance VCE = 8 V, f = 1 MHz Cce 0.2 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.85 pF Noise figure VCE = 8 V, ZS = ZSopt, f = 800 MHz, F 0.8 dB IC = 5 mA VCE = 8 V, ZS = ZSopt, f = 800 MHz, F 1.5 dB IC = 15 mA VCE = 8 V, ZS = 50 , f = 2 GHz, F 2.5 dB IC = 5 mA VCE = 8 V, ZS = 50 , f = 2 GHz, F 3.0 dB IC = 15 mA Power gain VCE = 8 V, ZS = 50 , ZL = ZLopt, Gpe 15.5 dB IC = 15 mA, f = 800 MHz VCE = 8 V, ZS = 50 , ZL = ZLopt, Gpe 8 dB IC = 15 mA, f = 2 GHz Linear output voltage – two VCE = 8 V, IC = 15 mA, dIM = 60 dB, V1 = V2 160 mV tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point VCE = 8 V, IC = 15 mA, f = 800 MHz IP3 26 dBm 2 (11) Rev. 3, 20-Jan-99,

Common Emitter S–Parameters

Z0 = 50 Tamb = 25C, unless otherwise specified S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.894 –20.6 6.78 163.0 0.027 77.1 0.967 –8.7 300 0.749 –56.2 5.61 136.2 0.066 59.2 0.834 –20.8 500 0.610 –83.8 4.50 117.7 0.086 50.0 0.716 –25.9 800 0.486 –116.2 3.36 98.8 0.102 46.3 0.623 –28.6 1000 0.445 –132.4 2.87 90.2 0.109 46.9 0.590 –30.1 1200 0.419 –147.3 2.50 81.9 0.115 48.7 0.568 –31.8 2 1500 0.402 –166.6 2.12 71.7 0.126 53.1 0.546 –35.0 1800 0.403 177.0 1.83 62.8 0.142 58.1 0.531 –38.8 2000 0.411 167.0 1.69 58.0 0.156 60.8 0.524 –41.9 2200 0.423 158.5 1.59 53.0 0.173 63.2 0.516 –45.1 2500 0.445 146.1 1.45 45.8 0.202 65.2 0.511 –51.7 2800 0.464 137.1 1.34 39.1 0.232 65.5 0.490 –59.1 3000 0.490 130.5 1.27 34.7 0.255 64.7 0.471 –64.8 100 0.760 –32.1 14.10 154.1 0.024 72.7 0.912 –15.2 300 0.522 –79.0 9.62 121.5 0.052 58.5 0.663 –27.9 500 0.390 –108.5 6.72 104.7 0.067 57.0 0.538 –28.1 800 0.311 –139.1 4.56 89.9 0.088 60.0 0.473 –26.3 1000 0.292 –153.5 3.77 83.1 0.103 62.1 0.459 –26.4 1200 0.282 –166.5 3.21 76.7 0.119 63.6 0.450 –27.4551500 0.287 178.0 2.67 68.3 0.143 64.7 0.438 –30.4 1800 0.298 164.0 2.29 60.9 0.169 65.5 0.428 –34.2 2000 0.313 157.1 2.10 56.6 0.189 65.2 0.423 –37.1 2200 0.328 149.6 1.96 52.5 0.209 64.8 0.415 –40.2 2500 0.353 140.6 1.79 46.4 0.239 63.5 0.406 –46.8 2800 0.379 133.2 1.65 39.4 0.267 61.5 0.380 –53.8 3000 0.400 127.4 1.55 35.4 0.286 59.8 0.358 –58.9 100 0.594 –46.3 22.01 144.4 0.021 69.8 0.829 –21.7 300 0.346 –101.6 12.12 110.8 0.043 63.5 0.524 –29.9 500 0.264 –130.9 7.86 97.1 0.060 66.0 0.431 –25.7 800 0.230 –158.2 5.13 85.1 0.088 69.0 0.399 –21.9 1000 0.224 –169.5 4.21 79.5 0.107 69.7 0.396 –21.8 1200 0.225 179.8 3.56 73.9 0.126 69.6 0.393 –23.3 10 1500 0.235 166.8 2.94 66.8 0.154 68.6 0.387 –26.6 1800 0.251 156.9 2.51 59.9 0.184 67.6 0.379 –30.7 2000 0.270 150.2 2.30 56.0 0.206 66.2 0.374 –33.7 2200 0.287 144.1 2.14 52.1 0.226 65.1 0.366 –36.9 2500 0.310 136.4 1.95 46.2 0.256 62.6 0.354 –43.6 2800 0.342 131.0 1.79 39.9 0.284 60.1 0.325 –50.5 3000 0.362 125.6 1.68 35.9 0.302 57.8 0.301 –55.3 Rev. 3, 20-Jan-99 3 (11), S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.477 –56.7 26.58 138.3 0.019 69.7 0.7681 –25.3 300 0.276 –116.4 13.06 106.1 0.039 67.8 0.4623 –29.2 500 0.221 –144.4 8.25 94.0 0.059 70.9 0.3912 –23.1 800 0.208 –169.5 5.34 83.2 0.088 72.5 0.3733 –19.1 1000 0.206 –177.8 4.35 78.0 0.109 72.3 0.3734 –19.4 1200 0.208 172.5 3.68 72.8 0.129 71.6 0.3736 –21.1 15 1500 0.221 162.5 3.03 65.9 0.159 69.9 0.3686 –24.7 1800 0.237 154.0 2.58 59.3 0.190 68.2 0.3619 –29.0 2000 0.257 147.5 2.37 55.7 0.212 66.7 0.3561 –32.1 2200 0.280 142.4 2.21 52.1 0.232 65.2 0.3474 –35.4 2500 0.303 135.4 2.01 46.1 0.262 62.4 0.3343 –42.2 2800 0.329 130.0 1.85 39.7 0.290 59.5 0.3053 –49.1 3000 0.357 124.8 1.73 36.0 0.308 57.1 0.2807 –53.7 100 0.397 –66.0 29.45 134.1 0.017 69.8 0.722 –27.5 300 0.240 –128.2 13.50 103.4 0.038 71.1 0.427 –28.1 500 0.205 –153.8 8.43 92.3 0.058 73.5 0.370 –21.0 800 0.199 –175.5 5.43 82.0 0.089 74.3 0.360 –17.3 1000 0.195 176.6 4.42 77.1 0.110 73.8 0.362 –17.7 1200 0.202 168.2 3.73 72.0 0.131 72.5 0.363 –19.7 5 20 1500 0.219 159.0 3.08 65.5 0.162 70.5 0.359 –23.6 1800 0.235 151.5 2.62 59.0 0.193 68.6 0.352 –28.0 2000 0.252 145.7 2.40 55.2 0.215 66.8 0.346 –31.1 2200 0.274 140.0 2.24 51.6 0.235 65.3 0.338 –34.5 2500 0.300 134.2 2.03 46.0 0.265 62.4 0.325 –41.1 2800 0.326 129.2 1.87 39.6 0.293 59.4 0.295 –48.3 3000 0.357 124.8 1.76 35.8 0.311 57.0 0.270 –52.9 100 0.301 –82.0 32.38 128.8 0.016 71.9 0.662 –29.4 300 0.219 –143.6 13.79 100.3 0.036 74.7 0.393 –25.7 500 0.201 –165.8 8.52 90.3 0.057 76.5 0.352 –18.3 800 0.198 176.3 5.46 80.6 0.090 76.1 0.350 –15.2 1000 0.201 170.4 4.43 75.9 0.111 75.2 0.354 –16.0 1200 0.204 163.8 3.75 71.1 0.133 73.5 0.356 –18.2 30 1500 0.222 156.2 3.09 64.5 0.164 71.3 0.353 –22.3 1800 0.242 149.4 2.62 58.1 0.195 69.2 0.346 –26.9 2000 0.263 144.6 2.40 54.4 0.216 67.3 0.340 –30.2 2200 0.279 139.7 2.24 50.9 0.238 65.6 0.332 –33.6 2500 0.308 133.6 2.03 45.0 0.267 62.4 0.318 –40.7 2800 0.336 128.8 1.86 39.2 0.295 59.4 0.288 –47.6 3000 0.365 124.1 1.75 35.0 0.313 56.8 0.264 –52.1 4 (11) Rev. 3, 20-Jan-99, S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.900 –19.9 6.84 163.2 0.026 76.9 0.967 –8.4 300 0.751 –54.9 5.70 136.6 0.063 59.9 0.838 –20.1 500 0.615 –82.0 4.59 118.3 0.083 50.7 0.724 –25.0 800 0.480 –113.9 3.43 99.5 0.098 47.1 0.632 –27.6 1000 0.440 –130.1 2.94 90.8 0.105 47.8 0.601 –29.0 1200 0.408 –145.1 2.55 82.7 0.112 49.8 0.579 –30.8 2 1500 0.391 –164.8 2.16 72.4 0.123 54.2 0.556 –33.8 1800 0.390 178.5 1.87 63.5 0.138 59.0 0.544 –37.6 2000 0.398 168.6 1.73 58.4 0.153 61.7 0.536 –40.4 2200 0.407 159.6 1.62 54.0 0.169 64.2 0.529 –43.5 2500 0.429 147.7 1.48 46.7 0.198 65.9 0.523 –49.7 2800 0.454 138.6 1.37 39.9 0.226 66.3 0.502 –56.8 3000 0.474 131.5 1.29 35.2 0.249 65.3 0.482 –62.1 100 0.777 –30.5 14.06 154.7 0.023 73.1 0.916 –14.5 300 0.532 –76.2 9.71 122.4 0.050 58.9 0.675 –26.7 500 0.391 –104.5 6.82 105.5 0.065 57.3 0.552 –27.2 800 0.306 –135.8 4.64 90.5 0.086 60.4 0.489 –25.3 1000 0.283 –149.1 3.84 83.7 0.101 62.3 0.473 –25.5 1200 0.268 –163.0 3.27 77.3 0.116 63.8 0.466 –26.5851500 0.271 –180.0 2.72 69.1 0.139 65.1 0.454 –29.4 1800 0.281 166.6 2.33 61.5 0.165 65.9 0.445 –33.0 2000 0.298 158.8 2.14 57.3 0.184 65.6 0.440 –35.7 2200 0.312 151.8 2.00 53.2 0.204 65.3 0.432 –38.8 2500 0.339 142.4 1.82 46.8 0.232 64.1 0.424 –45.0 2800 0.369 134.7 1.68 40.1 0.260 62.2 0.397 –51.6 3000 0.388 128.9 1.57 35.8 0.278 60.2 0.373 –56.0 100 0.618 –43.7 21.93 145.3 0.020 70.6 0.837 –20.6 300 0.356 –96.4 12.30 111.7 0.042 63.6 0.542 –28.7 500 0.262 –125.0 8.01 97.8 0.059 66.0 0.448 –24.9 800 0.218 –153.5 5.24 85.6 0.086 68.9 0.417 –21.1 1000 0.211 –164.9 4.28 80.1 0.104 69.7 0.413 –21.1 1200 0.205 –175.7 3.63 74.6 0.123 69.6 0.411 –22.5 10 1500 0.219 170.4 3.00 67.4 0.150 68.8 0.404 –25.9 1800 0.235 158.9 2.56 60.5 0.180 67.8 0.398 –29.7 2000 0.249 152.1 2.34 56.8 0.200 66.6 0.392 –32.5 2200 0.268 145.5 2.19 52.8 0.221 65.4 0.384 –35.6 2500 0.294 138.8 1.99 46.9 0.250 63.1 0.373 –42.0 2800 0.322 132.3 1.83 40.4 0.276 60.4 0.343 –48.4 3000 0.352 126.8 1.72 36.3 0.294 58.0 0.316 –52.2 Rev. 3, 20-Jan-99 5 (11), S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.512 –52.8 26.62 139.4 0.019 70.3 0.780 –24.0 300 0.279 –109.2 13.28 106.8 0.039 67.4 0.480 –28.0 500 0.215 –137.0 8.43 94.6 0.057 70.3 0.408 –22.1 800 0.191 –164.4 5.46 83.6 0.086 72.1 0.391 –18.5 1000 0.186 –173.2 4.44 78.5 0.107 72.1 0.391 –18.9 1200 0.189 177.0 3.76 73.4 0.126 71.5 0.392 –20.4 15 1500 0.203 164.6 3.10 66.6 0.155 69.8 0.386 –24.0 1800 0.219 155.3 2.65 60.1 0.185 68.4 0.380 –28.1 2000 0.238 148.9 2.42 56.1 0.206 66.9 0.374 –31.0 2200 0.252 143.5 2.26 52.6 0.226 65.5 0.367 –34.1 2500 0.282 136.5 2.05 46.8 0.256 62.9 0.355 –40.7 2800 0.312 130.7 1.88 40.7 0.282 60.2 0.325 –47.2 3000 0.335 126.0 1.77 36.7 0.300 57.8 0.302 –51.4 100 0.436 –60.6 29.61 135.1 0.017 69.8 0.735 –26.1 300 0.239 –118.9 13.78 104.1 0.037 70.4 0.444 –26.9 500 0.192 –147.0 8.62 92.8 0.057 72.9 0.387 –20.3 800 0.178 –170.5 5.55 82.5 0.087 73.8 0.378 –16.7 1000 0.177 –179.4 4.51 77.5 0.108 73.4 0.380 –17.2 1200 0.176 172.3 3.82 72.6 0.128 72.4 0.382 –19.2 20 1500 0.195 161.7 3.15 66.0 0.157 70.6 0.378 –22.9 1800 0.214 153.4 2.69 59.6 0.188 68.8 0.371 –27.2 2000 0.229 148.2 2.45 56.1 0.209 67.2 0.366 –30.1 2200 0.251 142.5 2.28 52.4 0.230 65.6 0.358 –33.4 2500 0.275 135.6 2.08 46.5 0.258 62.8 0.345 –40.0 2800 0.304 130.5 1.91 40.7 0.286 59.9 0.316 –46.5 3000 0.333 125.8 1.79 36.4 0.303 57.6 0.292 –50.8 6 (11) Rev. 3, 20-Jan-99,

Typical Characteristics (Tamb = 25C unless otherwise specified)

300 1.0 0.8 0.6 0.4 0.2 f=1MHz00020 40 60 80 100 120 140 16004812 16 20 96 12159 Tamb – Ambient Temperature ( °C ) 12884 VCB – Collector Base Voltage ( V ) Figure 1. Total Power Dissipation vs. Figure 3. Collector Base Capacitance vs. Ambient Temperature Collector Base Voltage 10000 5 8000 4 f=2GHz 6000 3 4000 2 f=800MHz 2000 VCE=8V 1 VCE=8V f=500MHz ZS=5000010 20 30 40 500510 15 20 25 12867 IC – Collector Current ( mA ) 12869 IC – Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current Rev. 3, 20-Jan-99 7 (11) f T – Transition Frequency ( MHz ) Ptot– Total Power Dissipation ( mW ) F – Noise Figure ( dB ) Ccb– Collector Base Capacitance ( pF ),

VCE = 8 V, IC = 15 mA , Z0 = 50 S11 S12

j 90° 120° 60° j0.5 j2 150° 3.0 GHz 30° j0.2 j5 2.0 3.0 GHz 1.0 2.0 0 ÁÁ0.2Á ÁÁ1 ÁÁ2 Á5Á 180° 0.11.0 0.2 0.4 0° ÁÁÁ ÁÁÁÁÁÁ 0.3 –j0.2 –j5 0.1 –150° –30° –j0.5 –j2 –120° –60° 12 998 –j 12 999 –90° Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient

S21 S22

90° j 120° 60° j0.5 j2 150° 30° 0.1 j0.2 j5 0.3 1.0 180° 20 40 0° 0 Á0.2ÁÁ0.5ÁÁ1 ÁÁ5 3.0 GHz 0.8 ÁÁÁÁÁ ÁÁ 3.0 GHz 1.0 –j0.2 –j5 –150° –30° –j0.5 –j2 –120° –60° 13 000 –90° 13 501 –j Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient 8 (11) Rev. 3, 20-Jan-99,

Dimensions of BFQ67 in mm Dimensions of BFQ67R in mm

Rev. 3, 20-Jan-99 9 (11),

Dimensions of BFQ67W in mm

96 12236 10 (11) Rev. 3, 20-Jan-99,

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify VishaySemiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Rev. 3, 20-Jan-99 11 (11)]
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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136F- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicat
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136F- 500 600 800 bidirectional transient and blocking BT136F- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT136- 500 600 800 bidirectional transient and blocking BT136- 500F 600F 800F voltage capability and high thermal BT136- 500G 6
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500E 600E general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500D 600D general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT134W- 500 600 800 applications requiring high VDRM Repetitive peak off-state 500 600 800 V bidirectional transient and bloc
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT134- 500 600 800 bidirectional transient and blocking BT134- 500F 600F 800F voltage capability and high thermal BT134- 500G 6
DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor
DISCRETE SEMICONDUCTORS DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor Product specification 1997 Jun 19 Supersedes data of April 1995 File under Discrete Semiconductors, SC13b FEATURES PINNING - TO-92 (SOT54) variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTI