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Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per- formance at UHF, VHF and microwave frequencies. Features Small feedback capacitance Low noise figure High transition frequency211294 9279 13 579 94 9278 95 108313443BFP67 Marking: 67 BFP67R Marking: 67R Plastic case (SOT 143) Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter2113 653 13 56634BFP67W M...
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Silicon NPN Planar RF Transistor

Electrostatic sensitive device. Observe precautions for handling.

Applications

Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per- formance at UHF, VHF and microwave frequencies.

Features

Small feedback capacitance Low noise figure High transition frequency211294 9279 13 579 94 9278 95 108313443BFP67 Marking: 67 BFP67R Marking: 67R Plastic case (SOT 143) Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter2113 653 13 56634BFP67W Marking: W67 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

Absolute Maximum Ratings

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 2.5 V Collector current IC 50 mA Total power dissipation Tamb ≤ 60 C Ptot 200 mW Junction temperature Tj 150 C Storage temperature range Tstg –65 to +150 C Rev. 3, 20-Jan-99 1 (12),

Maximum Thermal Resistance

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 RthJA 450 K/W plated with 35m Cu

Electrical DC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 20 V, VBE = 0 ICES 100 A Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO1ACollector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 10 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V DC forward current transfer ratio VCE = 5 V, IC = 15 mA hFE 65 100 150

Electrical AC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency VCE = 8 V, IC = 15 mA, f = 500 MHz fT 7.5 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.35 pF Collector-emitter capacitance VCE = 8 V, f = 1 MHz Cce 0.25 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.85 pF Noise figure VCE = 8 V, ZS = ZSopt, f = 800 MHz, F 0.8 dB IC = 5 mA VCE = 8 V, ZS = ZSopt, f = 800 MHz, F 1.5 dB IC = 15 mA VCE = 8 V, ZS = 50 , f = 2 GHz, F 2.5 dB IC = 5 mA VCE = 8 V, ZS = 50 , f = 2 GHz, F 3.0 dB IC = 15 mA Power gain VCE = 8 V, ZS = 50 , ZL = ZLopt, Gpe 18 dB IC = 15 mA, f = 800 MHz VCE = 8 V, ZS = 50 , ZL = ZLopt, Gpe 10 dB IC = 15 mA, f = 2 GHz Linear output voltage – two VCE = 8 V, IC = 15 mA, dIM = 60 dB, V1 = V2 160 mV tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point VCE = 8 V, IC = 15 mA, f = 800 MHz IP3 26 dBm 2 (12) Rev. 3, 20-Jan-99,

Common Emitter S–Parameters

Z0 = 50 Tamb = 25C, unless otherwise specified S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.923 –18.5 6.55 165.3 0.023 77.7 0.971 –7.9 300 0.828 –52.3 5.71 141.2 0.060 58.8 0.877 –19.9 500 0.721 –79.4 4.77 122.9 0.082 45.9 0.772 –27.2 800 0.622 –110.7 3.72 103.5 0.099 34.2 0.670 –33.4 1000 0.582 –127.9 3.19 93.5 0.105 29.5 0.629 –36.4 1200 0.558 –142.8 2.81 84.7 0.108 25.8 0.598 –39.3 2 1500 0.546 –163.0 2.38 72.7 0.110 21.9 0.569 –44.0 1800 0.554 179.4 2.07 61.9 0.109 20.0 0.549 –48.7 2000 0.566 169.1 1.90 55.4 0.108 19.7 0.539 –52.1 2200 0.609 159.1 1.78 48.8 0.107 20.4 0.537 –56.0 2500 0.634 147.9 1.60 40.2 0.111 20.4 0.530 –61.9 2800 0.677 138.5 1.47 32.1 0.109 21.8 0.547 –69.2 3000 0.707 133.4 1.36 24.9 0.109 22.0 0.530 –75.0 100 0.824 –28.9 14.21 158.8 0.021 73.5 0.931 –13.8 300 0.672 –77.3 10.83 128.8 0.048 52.5 0.727 –30.1 500 0.564 –109.0 8.05 110.6 0.060 43.8 0.580 –35.7 800 0.496 –139.6 5.66 93.7 0.071 39.7 0.478 –37.8 1000 0.477 –155.2 4.68 85.4 0.077 38.9 0.446 –39.2 1200 0.471 –167.9 4.03 78.2 0.082 38.7 0.425 –40.9551500 0.482 176.1 3.32 68.1 0.090 38.6 0.405 –44.7 1800 0.502 162.1 2.83 59.0 0.098 38.8 0.391 –49.1 2000 0.526 154.2 2.59 53.3 0.103 38.7 0.386 –52.7 2200 0.565 146.0 2.41 47.5 0.109 38.8 0.383 –56.7 2500 0.596 137.7 2.14 39.9 0.118 36.7 0.374 –63.2 2800 0.642 130.3 1.96 32.5 0.125 36.2 0.385 –70.9 3000 0.669 126.2 1.81 26.3 0.128 34.8 0.369 –77.1 100 0.689 –43.7 23.32 151.2 0.019 68.4 0.872 –20.7 300 0.544 –103.8 14.92 118.0 0.037 50.7 0.575 –38.0 500 0.481 –135.0 10.12 102.0 0.047 47.7 0.432 –39.6 800 0.450 –161.2 6.77 87.8 0.058 48.9 0.357 –38.1 1000 0.446 –173.3 5.51 80.6 0.066 50.2 0.338 –38.2 1200 0.447 176.2 4.69 74.4 0.074 50.4 0.325 –39.6 10 1500 0.461 163.5 3.83 65.5 0.087 50.1 0.314 –43.5 1800 0.490 152.5 3.24 57.3 0.098 49.2 0.304 –48.4 2000 0.511 145.7 2.95 52.0 0.107 48.2 0.301 –52.4 2200 0.552 138.7 2.74 46.6 0.115 47.0 0.298 –57.2 2500 0.588 132.2 2.44 39.6 0.126 43.4 0.288 –64.4 2800 0.626 126.1 2.23 32.6 0.135 41.8 0.299 –72.9 3000 0.659 122.6 2.04 27.1 0.138 39.8 0.282 –79.8 Rev. 3, 20-Jan-99 3 (12), S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.598 –55.4 29.27 146.1 0.017 67.0 0.820 –25.1 300 0.494 –120.4 16.71 112.4 0.032 52.0 0.492 –40.9 500 0.458 –148.6 10.93 98.1 0.041 52.3 0.364 –40.1 800 0.440 –170.9 7.19 85.1 0.054 55.1 0.306 –36.7 1000 0.439 178.4 5.83 78.7 0.063 55.8 0.294 –36.6 1200 0.446 169.6 4.94 72.7 0.073 55.9 0.286 –37.9 15 1500 0.462 158.5 4.02 64.3 0.087 54.8 0.278 –42.2 1800 0.491 148.3 3.40 56.3 0.100 53.3 0.270 –47.5 2000 0.515 142.6 3.09 51.4 0.108 51.6 0.267 –51.9 2200 0.552 136.3 2.86 46.2 0.117 50.3 0.265 –57.1 2500 0.591 130.0 2.54 39.2 0.128 46.1 0.254 –64–8 2800 0.630 124.4 2.32 32.1 0.138 44.0 0.264 –73.8 3000 0.667 121.1 2.13 26.8 0.142 41.8 0.249 –81.3 100 0.535 –65.9 33.32 142.3 0.016 64.1 0.779 –28.1 300 0.473 –131.4 17.57 109.1 0.029 54.4 0.440 –42.2 500 0.451 –156.5 11.31 95.7 0.038 56.1 0.327 –39.4 800 0.442 –176.7 7.37 83.6 0.052 59.0 0.280 –35.0 1000 0.444 173.7 5.97 77.3 0.062 59.5 0.272 –34.8 1200 0.448 166.2 5.04 71.7 0.072 59.0 0.266 –36.3 5 20 1500 0.467 155.2 4.09 63.4 0.087 57.3 0.260 –40.9 1800 0.496 146.1 3.45 55.7 0.101 55.2 0.254 –46.6 2000 0.519 140.5 3.14 50.8 0.109 53.6 0.251 –51.2 2200 0.558 134.5 2.91 45.7 0.118 51.9 0.249 –56.6 2500 0.596 128.6 2.59 38.9 0.130 47.4 0.239 –64.8 2800 0.633 123.3 2.35 31.9 0.140 45.4 0.249 –74.0 3000 0.666 120.3 2.15 26.5 0.144 42.9 0.233 –81.9 100 0.487 –75.3 35.99 139.4 0.015 64.4 0.746 –30.2 300 0.466 –139.4 18.03 106.9 0.027 55.7 0.406 –42.4 500 0.455 –162.0 11.48 94.3 0.036 58.8 0.304 –38.3 800 0.446 179.8 7.44 82.6 0.051 61.2 0.265 –33.4 1000 0.452 171.2 6.02 76.4 0.062 61.6 0.260 –33.3 1200 0.453 163.9 5.08 70.8 0.071 60.7 0.256 –34.8 25 1500 0.473 154.0 4.12 62.8 0.086 59.0 0.251 –39.8 1800 0.503 144.8 3.48 55.2 0.100 56.6 0.245 –45.6 2000 0.528 139.8 3.16 50.3 0.109 54.5 0.243 –50.3 2200 0.567 133.8 2.91 45.2 0.118 53.0 0.242 –56.0 2500 0.600 128.2 2.60 38.3 0.130 48.4 0.231 –64.4 2800 0.640 122.8 2.35 31.5 0.140 46.2 0.241 –74.1 3000 0.673 119.4 2.16 26.3 0.144 43.7 0.227 –82.0 4 (12) Rev. 3, 20-Jan-99, S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.456 –83.5 37.80 137.1 0.014 62.9 0.718 –31.8 300 0.463 –144.8 18.20 105.3 0.025 57.6 0.383 –42.1 500 0.459 –165.7 11.51 93.1 0.035 60.9 0.290 –37.0 800 0.451 177.4 7.43 81.7 0.051 63.0 0.258 –31.7 1000 0.456 169.1 6.00 75.8 0.061 63.0 0.255 –31.8 1200 0.461 162.1 5.05 70.1 0.071 62.1 0.252 –33.6 5 30 1500 0.480 152.6 4.11 62.2 0.086 59.9 0.248 –38.8 1800 0.510 144.2 3.45 54.5 0.100 57.6 0.242 –44.7 2000 0.535 138.3 3.13 49.9 0.109 55.4 0.240 –49.7 2200 0.574 133.1 2.91 44.7 0.118 53.7 0.239 –55.4 2500 0.610 127.5 2.58 37.8 0.130 49.1 0.228 –63.9 2800 0.651 122.3 2.33 31.0 0.140 47.0 0.240 –73.5 3000 0.683 119.0 2.14 25.9 0.144 44.4 0.224 –81.6 100 0.932 –17.9 6.53 165.5 0.022 77.5 0.972 –7.6 300 0.834 –50.6 5.73 141.8 0.058 59.5 0.884 –19.0 500 0.729 –76.9 4.80 123.8 0.079 46.9 0.783 –26.1 800 0.619 –107.7 3.76 104.3 0.095 35.6 0.684 –31.9 1000 0.572 –124.7 3.24 94.3 0.101 30.6 0.642 –35.1 1200 0.550 –139.6 2.85 85.5 0.105 27.2 0.613 –37.7 2 1500 0.536 –160.4 2.42 73.6 0.107 23.2 0.584 –42.2 1800 0.536 –177.9 2.10 62.8 0.107 21.5 0.562 –46.6 2000 0.560 171.4 1.93 56.5 0.106 21.1 0.554 –50.1 2200 0.591 161.5 1.82 49.9 0.105 21.8 0.552 –53.8 2500 0.612 150.1 1.63 41.1 0.109 21.8 0.545 –59.6 2800 0.663 140.1 1.51 32.9 0.108 22.9 0.561 –66.7 3000 0.691 134.9 1.38 26.0 0.107 23.1 0.544 –72.2 100 0.841 –27.7 14.15 159.3 0.020 74.2 0.934 –13.1 300 0.684 –73.7 10.91 129.9 0.047 53.8 0.740 –28.6 500 0.567 –105.1 8.16 111.5 0.059 44.6 0.598 –34.1 800 0.487 –135.8 5.76 94.6 0.070 40.4 0.497 –36.3 1000 0.464 –151.6 4.78 86.2 0.076 39.7 0.464 –37.5 1200 0.455 –164.3 4.11 78.9 0.081 39.6 0.443 –39.0 5 1500 0.462 179.0 3.39 69.0 0.089 39.1 0.423 –42.7 1800 0.485 164.3 2.90 60.0 0.097 39.5 0.409 –46.8 2000 0.507 156.4 2.64 54.4 0.102 39.5 0.403 –50.3 2200 0.542 148.2 2.46 48.6 0.107 39.5 0.402 –54.1 2500 0.574 139.6 2.20 41.0 0.117 37.2 0.392 –60.2 2800 0.622 132.4 2.01 33.7 0.123 36.9 0.403 –67.6 3000 0.654 128.0 1.86 27.4 0.126 35.5 0.386 –73.5 Rev. 3, 20-Jan-99 5 (12), S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.719 –40.7 23.17 152.1 0.018 69.5 0.876 –19.4 300 0.550 –98.6 15.11 119.1 0.037 51.3 0.592 –36.0 500 0.472 –130.0 10.31 102.9 0.046 48.5 0.451 –37.7 800 0.431 –156.9 6.91 88.5 0.058 49.3 0.376 –36.3 1000 0.424 –170.1 5.66 81.3 0.065 50.3 0.357 –36.6 1200 0.425 179.4 4.80 74.8 0.074 50.8 0.345 –37.7 10 1500 0.440 165.8 3.92 66.1 0.085 50.1 0.333 –41.5 1800 0.465 154.3 3.32 57.9 0.097 49.3 0.323 –46.1 2000 0.490 147.6 3.03 52.9 0.105 48.1 0.320 –49.9 2200 0.528 140.5 2.81 47.5 0.113 47.4 0.317 –54.2 2500 0.563 133.8 2.50 40.4 0.124 43.7 0.306 –61.1 2800 0.605 127.7 2.29 33.5 0.133 42.1 0.316 –69.2 3000 0.640 123.7 2.11 27.8 0.136 40.1 0.298 –75.7 100 0.635 –51.2 29.24 147.1 0.017 67.1 0.828 –23.7 300 0.494 –114.4 17.00 113.5 0.032 52.2 0.510 –38.8 500 0.443 –143.6 11.19 98.8 0.040 52.3 0.384 –38.1 800 0.419 –166.8 7.38 85.7 0.054 55.0 0.326 –34.8 1000 0.420 –178.9 5.98 79.2 0.063 55.7 0.313 –34.7 1200 0.424 172.4 5.08 73.3 0.072 55.9 0.305 –36.0 8 15 1500 0.437 160.6 4.13 64.9 0.085 54.6 0.297 –40.0 1800 0.465 149.6 3.48 57.1 0.098 53.0 0.289 –45.0 2000 0.488 143.8 3.18 52.1 0.107 51.4 0.286 –49.3 2200 0.526 137.8 2.94 47.1 0.115 50.4 0.284 –54.0 2500 0.561 131.6 2.62 40.0 0.126 46.1 0.272 –61.3 2800 0.606 126.0 2.38 33.2 0.136 44.2 0.282 –69.9 3000 0.637 122.6 2.19 27.6 0.140 42.0 0.265 –76.9 100 0.575 –60.1 33.26 143.4 0.016 65.1 0.788 –26.6 300 0.464 –124.9 17.96 110.1 0.029 54.1 0.459 –39.9 500 0.436 –151.9 11.60 96.5 0.038 55.7 0.347 –37.3 800 0.419 –172.8 7.57 84.2 0.052 58.3 0.300 –33.2 1000 0.417 176.7 6.14 77.9 0.062 58.9 0.292 –33.1 1200 0.422 168.4 5.19 72.0 0.071 58.5 0.286 –34.5 20 1500 0.442 157.4 4.21 64.1 0.085 57.1 0.279 –38.8 1800 0.470 147.7 3.56 56.4 0.099 55.1 0.272 –44.1 2000 0.494 142.2 3.23 51.5 0.107 53.3 0.270 –48.7 2200 0.532 136.3 3.00 46.6 0.116 51.8 0.268 –53.4 2500 0.568 130.1 2.67 39.6 0.127 47.4 0.257 –61.1 2800 0.608 124.6 2.42 33.1 0.137 45.3 0.266 –70.1 3000 0.645 121.6 2.23 27.7 0.141 42.8 0.249 –77.3 6 (12) Rev. 3, 20-Jan-99, S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.532 –67.6 36.13 140.5 0.014 65.4 0.756 –28.4 300 0.453 –132.6 18.45 107.8 0.027 55.3 0.425 –40.1 500 0.432 –157.4 11.78 94.9 0.036 58.4 0.324 –36.1 800 0.419 –176.9 7.65 83.0 0.051 60.5 0.286 –31.5 1000 0.419 173.7 6.18 77.0 0.061 61.0 0.281 –31.5 1200 0.428 166.0 5.22 71.3 0.071 60.1 0.276 –33.1 8 25 1500 0.445 155.4 4.24 63.4 0.085 58.4 0.271 –37.9 1800 0.478 146.2 3.57 55.8 0.099 56.3 0.264 –43.3 2000 0.500 140.9 3.24 51.0 0.108 54.4 0.262 –47.8 2200 0.537 135.3 3.00 46.0 0.117 52.4 0.261 –52.9 2500 0.575 129.0 2.68 39.1 0.128 48.3 0.250 –60.7 2800 0.616 124.3 2.43 32.5 0.138 46.1 0.260 –70.0 3000 0.651 121.1 2.23 27.4 0.142 43.6 0.242 –77.3 Rev. 3, 20-Jan-99 7 (12),

Typical Characteristics (Tamb = 25C unless otherwise specified)

300 1.0 0.8 0.6 150 f=1MHz 0.4 0.200020 40 60 80 100 120 140 16004812 16 20 96 12159 Tamb – Ambient Temperature ( °C ) 12868 VCB – Collector Base Voltage ( V ) Figure 1. Total Power Dissipation vs. Figure 3. Collector Base Capacitance vs. Ambient Temperature Collector Base Voltage 10000 5 8000 4 f=2GHz 6000 3 4000 2 f=800MHz 2000 VCE=8V 1 VCE=8V f=500MHz ZS=5000010 20 30 40 500510 15 20 25 12867 IC – Collector Current ( mA ) 12869 IC – Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current 8 (12) Rev. 3, 20-Jan-99fT– Transition Frequency ( MHz ) Ptot– Total Power Dissipation ( mW ) F – Noise Figure ( dB ) Ccb– Collector Base Capacitance ( pF ),

VCE = 8 V, IC = 15 mA , Z0 = 50 S11 S12

j 90° 120° 60° j0.5 j2 3.0 GHz 150° 3.0 GHz 30°2.0 j0.2 j5 2.0 1.0 0 1.0 Á1ÁÁ2ÁÁÁ 0.15 180° 0.08 0.16 0°

ÁÁÁÁÁÁ

0.5 –j0.2 –j5 0.3 0.1 –150° –30° –j0.5 –j2 –120° –60° 12 974 –j 12 975 –90° Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient

S21 S22

90° j 120° 60° j0.5 j2 0.1 0.3 30° j0.2 j5 1.0 180° 3.0 GHz 12 24 0° 0 ÁÁ0.2ÁÁ0.5ÁÁ1 ÁÁ2 Á51.0 Á 3.0 GHz 0.3 0.1 –j0.2 –j5 –150° –30° –j0.5 –j2 –120° –60° 12 976 –90° 12 977 –j Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient Rev. 3, 20-Jan-99 9 (12),

Dimensions of BFP67 in mm

96 12240

Dimensions of BFP67R in mm

96 12239 10 (12) Rev. 3, 20-Jan-99,

Dimensions of BFP67W in mm

96 12237 Rev. 3, 20-Jan-99 11 (12),

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 12 (12) Rev. 3, 20-Jan-99]
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source con
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION •
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136X- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a full pack plastic envelope, intended for use in general purpose BT136X- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicati
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136X- 500 600 800 bidirectional transient and blocking BT136X- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate triacs SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a full pack, plastic envelope, intended for use in general purpose BT136F- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136F- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicat
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136F- 500 600 800 bidirectional transient and blocking BT136F- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT136- 500 600 800 bidirectional transient and blocking BT136- 500F 600F 800F voltage capability and high thermal BT136- 500G 6
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500E 600E general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500D 600D general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT134W- 500 600 800 applications requiring high VDRM Repetitive peak off-state 500 600 800 V bidirectional transient and bloc
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT134- 500 600 800 bidirectional transient and blocking BT134- 500F 600F 800F voltage capability and high thermal BT134- 500G 6
DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor
DISCRETE SEMICONDUCTORS DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor Product specification 1997 Jun 19 Supersedes data of April 1995 File under Discrete Semiconductors, SC13b FEATURES PINNING - TO-92 (SOT54) variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTI
P-Channel 200-V (D-S) MOSFETs
P-Channel 200-V (D-S) MOSFETs Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Secondary Breakdown Free: –2