Download: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification 1996 Jun 04 Supersedes data of September 1995 File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification 1996 Jun 04 Supersedes data of September 1995 File under Discrete Semiconductors, SC14 FEATURES PINNING - SOT343 • High power gain PIN DESCRIPTION • High efficiency 1 collector • Small size discrete power amplifier 2 emitter • 1.9 GHz operating area 3 base • Gold metallization ensures excellent reliability 4 emitter • Linear and non-linear operation. APPLICATIONS handbook, 2 column4s 3 • Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS. • Driver for DCS 1800. D...
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DISCRETE SEMICONDUCTORS

DATA SHEET BFG11W/X NPN 2 GHz power transistor

Product specification 1996 Jun 04 Supersedes data of September 1995 File under Discrete Semiconductors, SC14, FEATURES PINNING - SOT343 • High power gain PIN DESCRIPTION • High efficiency 1 collector • Small size discrete power amplifier 2 emitter • 1.9 GHz operating area 3 base • Gold metallization ensures excellent reliability 4 emitter • Linear and non-linear operation. APPLICATIONS handbook, 2 column4s 3 • Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS. • Driver for DCS 1800. DESCRIPTION12NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. Top view MSB014 Marking code: S4 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common-emitter test circuit. fVPGηMODE OF OPERATION CELpc(GHz) (V) (mW) (dB) (%) Pulsed, class-AB, δ < 1 : 2; tp = 5 ms 1.9 3.6 400 ≥6 ≥60 1996 Jun 04 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA Ptot total power dissipation up to Ts = 60 °C; note 1 − 760 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point up to Ts = 60 °C; 150 K/W Ptot = 760 mW; note 1 Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector tab. MGD411 handbook1, 0full pagewidth Zth j-s (K/W) δ = 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 tP p 0.01 δ = T 0.1tpt

T

10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values. 1996 Jun 04 3,

CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; open emitter 20 − V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; open base 8 − V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; open collector 2.5 − V ICES collector cut-off current VCE = 8 V; VBE = 0 − 100 µA hFE DC current gain VCE = 5 V; IC = 100 mA 25 − Cc collector capacitance VCB = 3.6 V; IE = ie = 0; f = 1 MHz − 5 pF Cre feedback capacitance VCE = 3.6 V; IC = 0; f = 1 MHz − 4 pF APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common-emitter test circuit. fVIPGηMODE OF OPERATION CE CQLpc(GHz) (V) (mA) (mW) (dB) (%) Pulsed, class-AB, δ < 1 : 2; tp = 5 ms 1.9 3.6 1 400 ≥6 ≥60 Ruggedness in class-AB operation The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions at f = 1.9 GHz: tp = 1.25 ms, δ = 1 : 8 at VCE = 7 V and tp = 5 ms, δ = 1 : 2 at VCE = 4.5 V. MGD412 MGD552 8 90 handbook, halfpage 0 80handbook, halfpage Gp G ηp C dim ηc (dB) (%) (dBc) (%) 6 70 −20 60 ηC dim 4 50 −40 40 2 30 −60 20 ηc 0 10 −8000200 400 600 800 0 10 20 30 PL (mW) Po(av) (dBm) VCE = 3.6 V; Icϕ = 1 mA; f1 = 1990.0 MHz; f2 = 1990.1 MHz; δ = 1 : 8; tp = 625 µs. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; δ < 1 : 8; tp = 1.25 ms. Fig.4 Two tone intermodulation distortion Fig.3 Power gain and efficiency as functions and efficiency as functions of average of load power; typical values. output power; typical values. 1996 Jun 04 4, List of components used in test circuit (see Figs 5 and 6) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE N0. C1, C8, C9, C10 multilayer ceramic chip capacitor; note 1 24 pF C2, C3 multilayer ceramic chip capacitor; note12pF C4 multilayer ceramic chip capacitor; note 1 1.2 pF C5 multilayer ceramic chip capacitor; note 1 0.2 pF C6, C7, multilayer ceramic chip capacitor; note 1 1.3 pF C11, C12, C13 multilayer ceramic chip capacitor; note 1 10 nF C14, C15 electrolytic capacitor 470 µF; 10 V 2222 032 14152 L1 stripline; note 2 length 22.5 mm width 0.9 mm L2 stripline; note 2 length 6 mm width 0.9 mm L3 stripline; note 2 length 1 mm L4 stripline; note 2 length 2.5 mm L5 stripline; note 2 length 4.5 mm L6 stripline; note 2 length 24.5 mm L7 stripline; note 2 length 20 mm L8 stripline; note 2 length 10.5 mm L9 stripline; note 2 length 4.4 mm width 0.4 mm L10 stripline; note 2 length 19.7 mm width 0.4 mm L11, L12 RF choke 1 µH 4330 030 36301 R1 metal film resistor 78.7 Ω; 0.4 W R2 metal film resistor 38.3 Ω; 0.4 W R3 metal film resistor 10 Ω; 0.4 W T1 bias transistor BC548; note 3 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric εr = 6.15; tan δ = 0.0019; thickness = 0.64 mm; copper cladding = 35 µm. 3. Or equivalent (VBE = 0.65 V at Tamb = 25 °C). 1996 Jun 04 5, R1

V

handbook, full pagewidth Vbias S R2 T1 C14 C15 C13 L11 L12 R3 C11 C12 L10 L9 C9 C10 L7 L8

DUT

C1 L1 L2 L3 L4 L5 L6 C8 50 Ω 50 Ω input output C2, C3 C4 C5 C6, C7 MGD413 Fig.5 Common-emitter test circuit for class-AB operation at 1.9 GHz. 1996 Jun 04 6, handbook, full pagewidth Base Collector Vbias R1 T1 R2 L11 C11 C14 C15 R3 L10 C9 C12 C13 L12 + Vs L9 L7 C10 L8 C2 C4 C1 C3 C5 C6 C8 C7 L1 Base L2 L3 L4 L5 Collector L6 MGD414 Dimensions in mm. Fig.6 Component layout for common-emitter test circuit. 1996 Jun 04 7, MGD415 MGD416 handbook, halfpage 20 Z handbook, halfpagei Z (Ω) L (Ω) R 10 Lxi 16 4 ri

XL

0 0 1800 1850 1900 1950 2000 1800 1850 1900 1950 2000 f (MHz) f (MHz) VCE = 3.6 V; VBE = 0.65 V; PL = 400 mW. VCE = 3.6 V; VBE = 0.65 V; PL = 400 mW. Fig.7 Input impedance as a function of frequency Fig.8 Load impedance as a function of frequency (series components), typical values. (series components), typical values. handbook, halfpageZiZLMBA451 Fig.9 Definition of transistor impedance. 1996 Jun 04 8, PACKAGE OUTLINE 1.00 0.4 handbook, full pagewidth 0.2MA0.2MB0.2 0.1 max max 0.243A2.2 1.35 2.0 1.15120.3 0.1 0.7 0.25 0.5 0.10 1.4 1.2 2.2 1.8 B MSB374 Dimensions in mm. Fig.10 SOT343. 1996 Jun 04 9,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 04 10,

NOTES

1996 Jun 04 11,

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Pasica 5/v, 11000 BEOGRAD, Middle East: see Italy Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Internet: http://www.semiconductors.philips.com/ps/ Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (1) ADDRESS CONTENT SOURCE June 5, 1996 © Philips Electronics N.V. 1996 SCA49 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 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