Download: DISCRETE SEMICONDUCTORS DATA SHEET BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1991 File under Discrete Semiconductors, SC07

DISCRETE SEMICONDUCTORS DATA SHEET BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 APPLICATIONS handbook, halfpage • VHF applications such as VHF television tuners and FM d4 3 tuners with 12 V supply voltage. The device is also suitable for use in professional communications g2 equipment. g1 DESCRIPTION Depletion type field-effect transistor in a plastic12micro-miniature SOT143 or SOT143R package with s,b source and substrate interconnected. Top view MAM039 The transistors are protected ...
Author: Perseo Cerda Shared: 8/19/19
Downloads: 3 Views: 348

Content

DISCRETE SEMICONDUCTORS

DATA SHEET BF992; BF992R Silicon N-channel dual-gate MOS-FETs

Product specification 1996 Jul 30 Supersedes data of April 1991 File under Discrete Semiconductors, SC07,

APPLICATIONS

handbook, halfpage • VHF applications such as VHF television tuners and FM d4 3 tuners with 12 V supply voltage. The device is also suitable for use in professional communications g2 equipment. g1

DESCRIPTION

Depletion type field-effect transistor in a plastic12micro-miniature SOT143 or SOT143R package with s,b source and substrate interconnected. Top view MAM039 The transistors are protected against excessive input Marking code: M92. voltage surges by integrated back-to-back diodes between gates and source. Fig.1 Simplified outline (SOT143) and symbol; BF992.

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static handbook, halfpage d discharge during transport or handling. 3 4 g2 PINNING g1 PIN SYMBOL DESCRIPTION 1 s,b source212ddrain s,b3ggate 2 Top view MAM040 4 g1 gate 1 Marking code: M52. Fig.2 Simplified outline (SOT143R) and symbol; BF992R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage (DC) − 20 V ID drain current (DC) − 40 mA Ptot total power dissipation Tamb = 60 °C − 200 mW Yfs forward transfer admittance f = 1 kHz; ID = 15 mA; VDS = 10 V; 25 − mS VG2-S = 4 V Cig1-s input capacitance at gate1f= 1 MHz; ID = 15 mA; VDS = 10 V; 4 − pF VG2-S = 4 V Crs reverse transfer capacitance f = 1 MHz; ID = 15 mA; VDS = 10 V; 30 − fF VG2-S = 4VFnoise figure GS = 2 mS; ID = 15 mA; VDS = 10 V; 1.2 − dB VG2-S = 4 V; f = 200 MHz Tj operating junction temperature − 150 °C 1996 Jul 30 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 40 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation up to Tamb = 60 °C; see Fig.3; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. MLA198 handbook, halfpage P (2) (1)tot max (mW) 0 100 200 Tamb ( o C) (1) BF992. (2) BF992R. Fig.3 Power derating curves. 1996 Jul 30 3, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air note 1 BF992 460 K/W BF992R 500 K/W Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-SS = ±10 mA 8 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-SS = ±10 mA 8 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 10 V; ID = 20 µA 0.2 1.3 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 10 V; ID = 20 µA 0.2 1.1 V ±IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = ±7 V − 25 nA ±IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = ±7 V − 25 nA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance 20 25 − mS Cig1-s input capacitance at gate1f= 1 MHz − 4 − pF Cig2-s input capacitance at gate2f= 1 MHz − 1.7 − pF Cos output capacitance f = 1 MHz − 2 − pF Crs reverse transfer capacitance f = 1 MHz − 30 40 fF F noise figure f = 200 MHz; GS = 2 mS − 1.2 − dB 1996 Jul 30 4, MGE797 MGE799 24 30 handbIook, halfpage handbook, halfpageD4V3V(mA) ID VG2-S = 5V2V20 VG1-S = 0.2 V (mA) 16 0.1 V 200V1V−0.1 V −0.2V810 −0.3V4−0.4V0V−0.5 V −0.6V000246810 12 −101

V

V (V) G1-S (V)

DS

VG2-S = 4 V; Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.4 Output characteristics; typical values. Fig.5 Transfer characteristics; typical values. MGE798 MGE800 30 30 handbook, halfpage handbook, halfpage5V|yfs| 4 V Yfs VG2-S = (mS) 3 V (mS) 5V2V4V20 203V10 102V1VVG2-S = 0V1V000V010 ID (mA) 20 −101VG1-S (V) VDS = 10 V; Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.6 Forward transfer admittance as a function Fig.7 Forward transfer admittance as a function of drain current; typical values. of gate 1-source voltage; typical values. 1996 Jul 30 5, 2 MGE794 MGE79310 handbook, halfpage handbook,1 h0alfpage yis y (mS) os (mS) bos bis 1 gis gos 10−1 10−1 10−2 10−2 10 102 10323f(MHz) 10 10 f (MHz) 10 VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. Fig.8 Input admittance as a function of frequency; Fig.9 Output admittance as a function of typical values. frequency; typical values. MGE795 MGE796 25 120 handbook, halfpage g handbook, halfpageYfs fs (mS) yrs 20 (µS) −brs −bfs 40 grs0010 102 3f (MHz) 10 10 10 2 103 f (MHz) VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. Fig.10 Forward transfer admittance as a function Fig.11 Reverse transfer admittance as a function of frequency; typical values. of frequency; typical values. 1996 Jul 30 6,

PACKAGE OUTLINES

3.0 handbook, full pagewidth 2.8 B 0.150 0.75 0.090 1.9 A 0.2MAB0.6043o0.1 10 max 1.4 2.5 max 1.2 max o max121.1 max o30 0.1MAB0 0 MBC845 max 0.88 0.480.1 0.1 1.7 TOP VIEW Dimensions in mm.

Fig.12 SOT143.

3.0 handbook, full pagewidth 2.8 B 0.150 0.40 0.090 1.9 A 0.2MA0.25340.1 o 10 max 1.4 2.5 max 1.2 max o max211.1 0.48 0.88 max o30 0.38 0.78 MBC844 max 1.7 0.1MBTOP VIEW Dimensions in mm.

Fig.13 SOT143R.

1996 Jul 30 7,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 8]
15

Similar documents

Silicon PNP Planar RF Transistor
Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features High cross modulation performance Low noise High power gain High reverse attenuation 94 9308 13623 BF979 Markin
Silicon PNP Planar RF Transistor
Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features High gain Low noise 94 9308 13623 BF970 Marking: BF970 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 2
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES • High forward transfer admittance handbook, halfpage d • Short channel transistor with high forward transfer43admitta
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF870; BF872 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS • For use in class-B video output stag
DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 field-effect transistors BF556A; BF556B; BF556C FEATURES • Low leakage level (typ. 50
DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 field-effect transistors BF545A; BF545B; BF545C FEATURES • Low leakage level (typ. 50
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Class-B video outpu
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF469; BF471 NPN high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Intended for class-
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source con
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION •
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136X- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a full pack plastic envelope, intended for use in general purpose BT136X- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicati
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136X- 500 600 800 bidirectional transient and blocking BT136X- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate triacs SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a full pack, plastic envelope, intended for use in general purpose BT136F- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136F- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicat
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136F- 500 600 800 bidirectional transient and blocking BT136F- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT136- 500 600 800 bidirectional transient and blocking BT136- 500F 600F 800F voltage capability and high thermal BT136- 500G 6
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500E 600E general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500D 600D general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT134W- 500 600 800 applications requiring high VDRM Repetitive peak off-state 500 600 800 V bidirectional transient and bloc
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT134- 500 600 800 bidirectional transient and blocking BT134- 500F 600F 800F voltage capability and high thermal BT134- 500G 6
DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor
DISCRETE SEMICONDUCTORS DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor Product specification 1997 Jun 19 Supersedes data of April 1995 File under Discrete Semiconductors, SC13b FEATURES PINNING - TO-92 (SOT54) variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTI
P-Channel 200-V (D-S) MOSFETs
P-Channel 200-V (D-S) MOSFETs Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Secondary Breakdown Free: –2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ V = -5V.transistors are produced using Fairchild's proprietary, high GSBSS110: -0.17A, -50V. RDS(ON) = 10Ω
SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Avalanche rated Continuous drain current ID -0.33 A
SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance RDS(on) 2 Ω • Avalanche rated Continuous drain current ID -0.33 A • Logic Level • dv/dt rated 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN