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Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features High cross modulation performance Low noise High power gain High reverse attenuation 94 9308 13623 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage –VCBO 20 V Collector-emitter voltage –VCEO 20 V Emitter-base voltage –VEBO3VCollector current –IC 50 m...
Author: Perseo Cerda Shared: 8/19/19
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Content

Silicon PNP Planar RF Transistor

Electrostatic sensitive device. Observe precautions for handling.

Applications

UHF/VHF uncontrolled prestages with low noise and low modulation.

Features

High cross modulation performance Low noise High power gain High reverse attenuation 94 9308 13623 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage –VCBO 20 V Collector-emitter voltage –VCEO 20 V Emitter-base voltage –VEBO3VCollector current –IC 50 mA Total power dissipation Tamb ≤ 60 C Ptot 300 mW Junction temperature Tj 150 C Storage temperature range Tstg –55 to +150 C

Maximum Thermal Resistance

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 RthJA 300 K/W plated with 35m Cu Rev. 3, 20-Jan-99 1 (4),

Electrical DC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current –VCE = 20 V, VBE = 0 –ICES 100 A Collector-base cut-off current –VCB = 15 V, IE = 0 –ICBO 100 nA Emitter-base cut-off current –VEB = 3 V, IC = 0 –IEBO 10 A Collector-emitter breakdown voltage –IC = 1 mA, IB = 0 –V(BR)CEO 20 V DC forward current transfer ratio –VCE = 10 V, –IC = 10 mA hFE 20 50 90

Electrical AC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Sym- Min Typ Max Unit bol Transition frequency –VCE = 10 V, –IC = 10 mA, f = 300 MHz fT 1750 MHz Transition frequency –VCE = 10 V, –IC = 30 mA, f = 300 MHz fT 1300 MHz Collector-base capacitance –VCB = 10 V, f = 1 MHz Ccb 0.6 pF Noise figure –VCE = 10 V, –IC = 10 mA, ZS = 50 , F 3.4 4.2 dB f = 800 MHz Power gain –VCE = 10 V, –IC = 10 mA, ZS = 50 , ZL Gpb 16 dB = 500 f = 800 MHz Collector current for Gpbmax –VCE = 10 V, ZL = 500 f = 800 MHz –IC 10 mA

Typical Characteristics (Tamb = 25C unless otherwise specified)

400 2100 350 1800 –VCB=10V 50 300 f=300MHz00020 40 60 80 100 120 140 1600510 15 20 25 30 35 12845 Tamb – Ambient Temperature ( °C ) 12848 –IC – Collector Current ( mA ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Transition Frequency vs. Collector Current 2 (4) Rev. 3, 20-Jan-99Ptot– Total Power Dissipation ( mW ) f T – Transition Frequency ( MHz ), 1.0 0.8 0.6 0.4 0.204812 16 20 12876 –VCB – Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage

Dimensions of BF979 in mm

96 12243 Rev. 3, 20-Jan-99 3 (4) Ccb– Collector Base Capacitance ( pF ),

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. 3, 20-Jan-99]
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