Download: DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07

DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES • High forward transfer admittance handbook, halfpage d • Short channel transistor with high forward transfer43admittance to input capacitance ratio g • Low noise gain controlled amplifier up to 1 GHz. 2 g1 APPLICATIONS • VHF and UHF applications with 12 V supply voltage, 1 2 such as television tuners and professional s,b communications equipment. Top view MAM039 DESCRIPTION Fig.1 Simplified outline (SOT143) and De...
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DISCRETE SEMICONDUCTORS

DATA SHEET BF908; BF908R Dual-gate MOS-FETs

Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07,

FEATURES

• High forward transfer admittance handbook, halfpage d • Short channel transistor with high forward transfer43admittance to input capacitance ratio g • Low noise gain controlled amplifier up to 1 GHz. 2 g1

APPLICATIONS

• VHF and UHF applications with 12 V supply voltage, 1 2 such as television tuners and professional s,b communications equipment. Top view MAM039

DESCRIPTION

Fig.1 Simplified outline (SOT143) and Depletion type field-effect transistor in a plastic symbol; BF908. microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. handbook, halfpag d CAUTION3e4The device is supplied in an antistatic package. The g2 gate-source input must be protected against static g discharge during transport or handling. 1

PINNING

2 1 PIN SYMBOL DESCRIPTION s,b Top view MAM040 1 s, b source2ddrain3ggate 2 Fig.2 Simplified outline (SOT143R) and2 symbol; BF908R. 4 g1 gate 1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 12 V ID drain current − − 40 mA Ptot total power dissipation − − 200 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 pF F noise figure f = 800 MHz − 1.5 2.5 dB 1996 Jul 30 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 40 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation see Fig.3; note 1 BF908 up to Tamb = 50 °C − 200 mW BF908R up to Tamb = 40 °C − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board. MRC275 handPbook, halfpage tot (mW) BF908 BF908R 0 50 100 150 200 T (oamb C) Fig.3 Power derating curves. 1996 Jul 30 3, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 BF908 500 K/W BF908R 550 K/W Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8 − 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8 − 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 µA − − 2 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 4 V; VDS = 8 V; ID = 20 µA − − 1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3 15 27 mA ±IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V − − 50 nA ±IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V − − 50 nA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj = 25 °C; f = 1 MHz 36 43 50 mS Cig1-s input capacitance at gate1f= 1 MHz 2.4 3.1 4 pF Cig2-s input capacitance at gate2f= 1 MHz 1.2 1.8 2.5 pF Cos output capacitance f = 1 MHz 1.2 1.7 2.2 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt − 0.6 1.2 dB f = 800 MHz; GS = GSopt; BS = BSopt − 1.5 2.5 dB 1996 Jul 30 4, MRC281 MRC282 handbook, halfpage 30VG2-S = 4 V handbook, halfpage VG1-S = 0.3 VID (mA) I3VD(mA) 30 0.2V2V1.5 V 0.1V1V0V0.5 V 10 −0.1 V −0.2V0V−0.3V00−0.6 −0.4 −0.2 0 0.2 0.4 0.604812 16 VG1-S (V) VDS (V) VDS = 8 V; Tj = 25 °C. VG2-S = 4 V; Tj = 25 °C. Fig.4 Transfer characteristics; typical values. Fig.5 Output characteristics; typical values. MRC280 MRC276 50 60Y4Vfs3VY(mS) fs2 V 40 (mS) 1.5V1V0.5 V VG2-S = 0V000510 15 20 25 40 0 40 80 120 160 I (mA) T (oj C)D VDS = 8 V; Tj = 25 °C. VDS = 8 V; VG2-S = 4 V; ID = 15 mA. Fig.6 Forward transfer admittance as a function Fig.7 Forward transfer admittance as a function of drain current; typical values. of junction temperature; typical values. 1996 Jul 30 5, Table 1 Scattering parameters s11 s21 s12 s22 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 50 0.998 −5.1 3.537 173.5 0.001 98.2 0.996 −2.4 100 0.994 −10.4 3.502 167.7 0.001 88.8 0.994 −4.9 200 0.979 −20.8 3.450 154.9 0.003 74.6 0.987 −9.5 300 0.962 −30.3 3.318 143.7 0.004 69.5 0.983 −13.9 400 0.939 −40.1 3.234 131.9 0.005 65.6 0.980 −18.5 500 0.914 −49.1 3.093 120.7 0.006 64.4 0.974 −22.8 600 0.892 −57.1 2.912 111.1 0.005 63.1 0.969 −27.0 700 0.865 −64.4 2.774 101.0 0.005 65.2 0.966 −31.2 800 0.837 −71.6 2.616 91.4 0.004 70.8 0.965 −35.4 900 0.811 −78.1 2.479 81.9 0.004 87.4 0.965 −39.4 1000 0.785 −84.5 3.329 72.5 0.003 108.0 0.966 −43.7 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 50 0.998 −5.3 3.983 173.4 0.001 95.5 0.994 −2.4 100 0.994 −10.9 3.943 167.5 0.001 93.6 0.991 −5.0 200 0.976 −21.6 3.878 154.7 0.003 74.3 0.984 −9.7 300 0.957 −31.7 3.722 143.3 0.004 70.0 0.979 −14.2 400 0.934 −41.7 3.614 131.6 0.005 63.5 0.975 −18.8 500 0.907 −51.1 3.446 120.4 0.006 62.2 0.969 −23.2 600 0.885 −59.1 3.240 110.9 0.005 59.6 0.964 −27.4 700 0.851 −66.8 3.072 100.9 0.005 64.8 0.961 −31.6 800 0.826 −73.9 2.891 91.3 0.004 67.8 0.959 −35.9 900 0.797 −80.7 2.733 81.9 0.004 85.0 0.958 −40.0 1000 0.773 −87.0 2.569 72.8 0.004 102.9 0.958 −44.2 Table 2 Noise datafFΓmin opt r (MHz) (dB) n(ratio) (deg) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 800 1.50 0.720 56.7 0.580 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 800 1.50 0.700 59.2 0.520 1996 Jul 30 6,

PACKAGE OUTLINES

3.0 handbook, full pagewidth 2.8 B 0.150 0.75 0.090 1.9 A 0.2MAB0.6043o0.1 10 max 1.4 2.5 max 1.2 max o max121.1 max o30 0.1MAB0 0 MBC845 max 0.88 0.480.1 0.1 1.7 TOP VIEW Dimensions in mm.

Fig.8 SOT143.

3.0 handbook, full pagewidth 2.8 B 0.150 1.9 0.40 0.090 A 0.2MA0.25340.1 o 10 max 1.4 2.5 max 1.2 max o max211.1 0.48 0.88 max o30 0.38 0.78 MBC844 max 1.7 0.1MBTOP VIEW Dimensions in mm.

Fig.9 SOT143R.

1996 Jul 30 7,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 8]
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