Download: DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 field-effect transistors BF556A; BF556B; BF556C FEATURES • Low leakage level (typ. 500 fA) • High gain handbook, halfpa2ge 1 • Low cut-off voltage. d g APPLICATIONS s • Impedance converters in e.g. electret microphones and infra-red detectors 3 Top view MAM036 • VHF amplifiers in oscillators and mixers. Marking codes: DESCRIPTION BF556A: M84. BF556B: M85. N-channel symmetrical silic...
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DISCRETE SEMICONDUCTORS

DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction

field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07, field-effect transistors BF556A; BF556B; BF556C

FEATURES

• Low leakage level (typ. 500 fA) • High gain handbook, halfpa2ge 1 • Low cut-off voltage. d g APPLICATIONS s • Impedance converters in e.g. electret microphones and infra-red detectors 3 Top view MAM036 • VHF amplifiers in oscillators and mixers. Marking codes: DESCRIPTION BF556A: M84. BF556B: M85. N-channel symmetrical silicon junction field-effect BF556C: M86. transistors in a SOT23 package. Fig.1 Simplified outline and symbol. PINNING - SOT23 PIN SYMBOL DESCRIPTION CAUTION1ssource The device is supplied in an antistatic package. The2ddrain gate-source input must be protected against static3ggate‘ discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − ±30 V VGSoff gate-source cut-off voltage ID = 200 µA; VDS = 15 V −0.5 −7.5 V IDSS drain current VGS = 0; VDS = 15 V BF556A37mA BF556B 6 13 mA BF556C 11 18 mA Ptot total power dissipation up to Tamb = 25 °C − 250 mW yfs forward transfer admittance VGS = 0; VDS = 15 V 4.5 − mS 1996 Jul 29 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − ±30 V VGSO gate-source voltage open drain − −30 V VGDO gate-drain voltage (DC) open source − −30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient; note 1 500 K/W Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 −30 − − V VGSoff gate-source cut-off voltage ID = 200 µA; VDS = 15 V −0.5 −7.5 V IDSS drain current VGS = 0; VDS = 15 V BF556A 3 − 7 mA BF556B 6 − 13 mA BF556C 11 − 18 mA IGSS gate leakage current VGS = −20 V; VDS = 0 − −0.5 −5000 pA yfs forward transfer admittance VGS = 0; VDS = 15 V 4.5 − − mS yos common source output VGS = 0; VDS = 15 V − 40 − µS admittance 1996 Jul 29 3, DYNAMIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. UNIT Cis input capacitance VDS = 15 V; VGS = −10 V; f = 1 MHz 1.7 pF VDS = 15 V; VGS = 0; f = 1 MHz 3 pF Crs reverse transfer capacitance VDS = 15 V; VGS = −10 V; f = 1 MHz 0.8 pF VDS = 15 V; VGS = 0; f = 1 MHz 0.9 pF gis common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 15 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 300 µS gfs common source transfer conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 2 mS VDS = 10 V; ID = 1 mA; f = 450 MHz 1.8 mS grs common source reverse conductance VDS = 10 V; ID = 1 mA; f = 100 MHz −6 µS VDS = 10 V; ID = 1 mA; f = 450 MHz −40 µS gos common source output conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 30 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 60 µS Vn equivalent input noise voltage VDS = 10 V; ID = 1 mA; f = 100 Hz 40 nV/√Hz MRC154 MRC156 handbook, 2h0alfpage handbook, 1h0alfpage IDSS Yfs (mA) (mS) 16 8 1268442000123456701234567VV(V)GSoff (V) GSoff VDS = 15 V; ID = 1 µA. VDS = 15 V. Fig.3 Forward transfer admittance as a function Fig.2 Drain current as a function of gate-source of gate-source cut-off voltage; typical cut-off voltage; typical values. values. 1996 Jul 29 4, MRC153 100 MRC155 handbook, halfpage 300 Gos handbook, halfpage (µS) RDSon 80 (Ω) 000−2 −4 −6 −802468VGSoff (V) VGSoff (V) VDS = 15 V. VDS = 100 mV; VGS = 0. Fig.4 Common-source output conductance as a Fig.5 Drain-source on-state resistance as a function of gate-source cut-off voltage; function of gate-source cut-off voltage; typical values. typical values. MRC145 5 MRC146 handbook, halfpage I VGS = 0 V handbook, halfpage

D

(mA) ID (mA) 4 VGS = 0 V −0.5 V −0.5 V −1.0V2−1.5 V −1 V −2.0 V4 −2.5V0004812 1604812 16 VDS (V) VDS (V) Fig.6 Typical output characteristics; BF556A. Fig.7 Typical output characteristics; BF556B. 1996 Jul 29 5, MRC147 MRC148 25 30 handbook, halfpage handbook, halfpage

ID

(mA) VGS = 0 V

ID

20 (mA) BF556C −1 V 20 −2 V BF556B −3 V −4 V BF556A −5V0004812 16 −6 −4 −20V(V) VGS (V)DS VDS = 15 V. Fig.8 Typical output characteristics; BF556C. Fig.9 Typical input characteristics. 3 MRC149 2 MRC151 handbIook 1, 0halfpage −10 D handbook, halfpage (µA) IG 2 (pA) ID = 10 mA10 −10 BF556C BF556B BF556A 1 mA 1 −1

IGSS

10−1 −10−1 0.1 mA 10−2 10−3 −10−2 −8 −6 −4 −20V04812 16 20GS (V) VDG (V) VDS = 15 V. ID = 10 mA only for BF556B and BF556C. Fig.10 Drain current as a function of gate-source Fig.11 Gate current as a function of drain-gate voltage; typical values. voltage; typical values. 1996 Jul 29 6, 3 MRC150 MRC16610 handbook, halfpage 300 IGSS P (pA) tot (mW) 10−1 −50 0 50 100 1500050 100 o 150 Tj (°C) Tamb ( C) VDS = 0; VGS = −20 V. Fig.12 Gate current as a function of junction temperature; typical values. Fig.13 Power derating curve. MRC134 MRC140 handb 1 3Cook, halfpagers handbook, halfpage (pF) Cis 0.8 (pF) 0.6 0.4 0.200–10 –8 –6 –4 –2 0 –10 –8 –6 –4 –20V(V) VGS (V)GS VDS = 15 V. VDS = 15 V. Fig.14 Reverse transfer capacitance; typical values. Fig.15 Input capacitance; typical values. 1996 Jul 29 7, 2 MRC142 MRC14110 handbook, halfpage 10handbook, halfpage gis, bis (mS) gfs, −b10 fs (mS) gfs bis11−bfs g 10− is 10−2 10−1 10 102 3f (MHz) 10 10 102 3f (MHz) 10 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.16 Common-source input admittance; typical Fig.17 Common-source transfer admittance; values. typical values. MRC144 MRC143 −10 handbook, halfpage handbook, 1 h0alfpage brs, grs bos, gos (mS) (mS) b − rs1 bos −10−1 grs 10−1 −10−2 gos −10−3 10−2 10 102 103 10 102 103 f (MHz) f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.18 Common-source reverse admittance; Fig.19 Common-source output admittance; typical values. typical values. 1996 Jul 29 8, MRC278 handbook1, 0 halfpage Vn (V) 10 102 103 104 105 f (Hz) VDS = 10 V; ID = 1 mA. Fig.20 Equivalent noise voltage as a function of frequency. 1996 Jul 29 9, PACKAGE OUTLINE 3.0 handbook, full pagewidth 2.8

B

1.9 0.150 0.55 0.090 0.95 A 0.2MA0.45210.1 10 o max 2.5 max 1.4 1.2 max 10 o max 1.1 0.48 max 30 o 0.38 0.1MABMBC846 max TOP VIEW Dimensions in mm. Fig.21 SOT23. 1996 Jul 29 10,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 11]
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