Download: DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995

DISCRETE SEMICONDUCTORS

DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction

field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07, field-effect transistors BF545A; BF545B; BF545C

FEATURES

• Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). handbook, halfpa2ge 1

APPLICATIONS

• Impedance converters in e.g. electret microphones and d infra-red detectorsgs• VHF amplifiers in oscillators and mixers. DESCRIPTION Top view MAM036 N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 Marking codes: PIN SYMBOL DESCRIPTION BF545A: M65. BF545B: M66. 1 s source BF545C: M67. 2 d drain Fig.1 Simplified outline and symbol. 3 g gate QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±30 V VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 15 V −0.4 −7.8 V IDSS drain current VGS = 0; VDS = 15 V BF545A 2 6.5 mA BF545B 6 15 mA BF545C 12 25 mA Ptot total power dissipation up to Tamb = 25 °C − 250 mW yfs forward transfer admittance VGS = 0; VDS = 15V36.5 mS 1996 Jul 29 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±30 V VGSO gate-source voltage open drain − −30 V VGDO gate-drain voltage (DC) open source − −30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. MBB688 handbook, halfpage Ptot (mW) 0 50 100 150 200 Tamb (°C) Fig.2 Power derating curve. 1996 Jul 29 3, THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient; note 1 500 K/W Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 −30 − − V VGSoff gate-source cut-off voltage ID = 200 µA; VDS = 15 V BF545A −0.4 − −2.2 V BF545B −1.6 − −3.8 V BF545C −3.2 − −7.8 V ID = 1 µA; VDS = 15 V −0.4 − −7.5 V IDSS drain current VGS = 0; VDS = 15 V BF545A 2 − 6.5 mA BF545B 6 − 15 mA BF545C 12 − 25 mA IGSS gate leakage current VGS = −20 V; VDS = 0 − −0.5 −1000 pA VGS = −20 V; VDS = 0; − − −100 nA Tj = 125 °C yfs forward transfer admittance VGS = 0; VDS = 15V3− 6.5 mS yos common source output VGS = 0; VDS = 15 V − 40 − µS admittance 1996 Jul 29 4, DYNAMIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. UNIT Cis input capacitance VDS = 15 V; VGS = −10 V; f = 1 MHz 1.7 pF VDS = 15 V; VGS = 0; f = 1 MHz 3 pF Crs reverse transfer capacitance VDS = 15 V; VGS = −10 V; f = 1 MHz 0.8 pF VDS = 15 V; VGS = 0; f = 1 MHz 0.9 pF gis common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 15 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 300 µS gfs common source transfer VDS = 10 V; ID = 1 mA; f = 100 MHz 2 mS conductance VDS = 10 V; ID = 1 mA; f = 450 MHz 1.8 mS grs common source reverse VDS = 10 V; ID = 1 mA; f = 100 MHz −6 µS conductance VDS = 10 V; ID = 1 mA; f = 450 MHz −40 µS gos common source output VDS = 10 V; ID = 1 mA; f = 100 MHz 30 µS conductance VDS = 10 V; ID = 1 mA; f = 450 MHz 60 µS MBB467 MBB466 30 6 handbook, halfpage handbook, halfpage

IDSS

(mA) Yfs (mS) 040−2 −4 −6 −8 0 −2 −4 −6 −8 VGSoff (V) VGSoff (V) VDS = 15 V; VGS = 0; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.4 Forward transfer admittance as a Fig.3 Drain current as a function of gate-source function of gate-source cut-off voltage; cut-off voltage; typical values. typical values. 1996 Jul 29 5, MBB465 MBB464 80 300 handbook, halfpage handbook, halfpage RDSon Y (Ω)os (µS) 000−2 −4 −6 −8 0 −2 −4 −6 −8 VGSoff (V) VGSoff (V) VDS = 15 V; VGS = 0; Tj = 25 °C. VDS = 100 mV; VGS = 0; Tj = 25 °C. Fig.5 Common-source output admittance as a Fig.6 Drain-source on-resistance as a function of gate-source cut-off voltage; function of gate-source cut-off voltage; typical values. typical values. MBB462 MBB463 handbook, halfpage 6handbook, halfpage ID ID (mA) VGS = 0 V (mA) 4 4 −0.5V22−1.0V0004812 −3 −2 −1 0VDS (V) 16 VGS (V) Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.7 Typical output characteristics; BF545A. Fig.8 Typical input characteristics; BF545A. 1996 Jul 29 6, MBB460 MBB459 16 16 handbook, halfpage handbook, halfpage ID ID (mA) VGS = 0 V (mA) 12 12 −0.5V8−1V8−1.5 V −2V44−2.5V0004812 V (V) 16 −6 −4 −2DS VGS (V) Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.9 Typical output characteristics; BF545B. Fig.10 Typical input characteristics; BF545B. MBB457 MBB456 30 30 handbook, halfpage handbook, halfpage ID ID (mA) (mA) VGS = 0 V 20 20 −1 V −2 V 10 10 −3 V −4 V −5V0004812 16 −8 −6 −4 −2 0 VDS (V) VGS (V) Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.11 Typical output characteristics; BF545C. Fig.12 Typical input characteristics; BF545C. 1996 Jul 29 7, 3 MBB461 3 MBB45810 handb 10IoDok, halfpage handbIoDok, halfpage (µA) (µA) 102 102 10 101110−1 10−1 10−2 10−2 10−3 10−3 −3 −2 −1 0 −6 −4 −2 0 VGS (V) VGS (V) VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.13 Drain current as a function of gate-source Fig.14 Drain current as a function of gate-source voltage; typical values for BF545A. voltage; typical values for BF545B. MBB455 3 MBB45410 −102 handbIook, halfpageD handbook, halfpage (µA) IG 102 (pA) ID = 10 mA−10 1 mA 1 −1

IGSS

10−1 −10−1 0.1 mA 10−2 10−3 −10−2 −8 −6 −4 −20010 VGS (V) VDG (V) VDS = 15 V; Tj = 25 °C. ID = 10 mA only for BF545B and BF545C; Tj = 25 °C. Fig.15 Drain current as a function of gate-source Fig.16 Gate current as a function of drain-gate voltage; typical values for BF545C. voltage; typical values. 1996 Jul 29 8, 3 MBB453 MBB452−10 1 handbook, halfpage handbook, halfpage

IGSS

(pA)

C

−102 rs (pF) −10 0.5 −1 −10−1 −50 0 50 100 150 0 Tj (°C) −10 −5 VGS (V) VDS = 0; VGS = −20 V. VDS = 15 V; Tj = 25 °C. Fig.17 Gate current as a function of junction Fig.18 Reverse transfer capacitance as a function temperature; typical values. of gate-source voltage; typical values. MBB451 2 MBB46810 handbook, h3alfpage handbook, halfpage yis Cis (mS) (pF) bis −1 g10 is 0 10−2 −10 −5 0 10 102 3VGS (V) f (MHz) 10 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.20 Common-source input admittance; Fig.19 Typical input capacitance. typical values. 1996 Jul 29 9, MBB469 MBB470 102 10 handbook, halfpage handbook, halfpage Yfs yrs (mS) (mS) 1 −brs 10−1 g fs −g − rs –b 2fs 10 10–1 10−32310 102 310 10 f (MHz) 10 10f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.21 Common-source forward transfer Fig.22 Common-source reverse transfer admittance; typical values. admittance; typical values. MBB471 handbook, halfpage yos (mS) 1 bos 10−1 gos 10−2 10 102 3f (MHz) 10 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.23 Common-source output admittance; typical values. 1996 Jul 29 10, PACKAGE OUTLINE 3.0 handbook, full pagewidth 2.8

B

1.9 0.150 0.55 0.090 0.95 A 0.2MA0.45210.1 10 o max 2.5 max 1.4 1.2 max 10 o max 1.1 0.48 max 30 o 0.38 0.1MABMBC846 max TOP VIEW Dimensions in mm. Fig.24 SOT23. 1996 Jul 29 11,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 12]

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