Download: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION • Frequencies up to 700 MHz. 1 d drain2ssource APPLICATIONS3ggate • LF, HF and DC amplifiers. DESCRIPTION handbook, halfpage General purpose N-channel symmetrical junction 23 d field-effect transistors in a plastic TO-92 variant package. g s CAUTION MAM257 The device is supplied in an antistatic pack...
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DISCRETE SEMICONDUCTORS

DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect

transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07, FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION • Frequencies up to 700 MHz. 1 d drain2ssource APPLICATIONS3ggate • LF, HF and DC amplifiers.

DESCRIPTION

handbook, halfpage General purpose N-channel symmetrical junction 23 d field-effect transistors in a plastic TO-92 variant package. g s CAUTION MAM257 The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − ±30 V VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.25 − −8 V VGSO gate-source voltage open drain − − −30 V IDSS drain current VDS = 15 V; VGS = 0 BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation Tamb = 75 °C − − 300 mW yfs forward transfer admittance VDS = 15 V; VGS = 0; 3 − 6.5 mS f = 1 kHz; Tamb = 25 °C Crs reverse transfer capacitance VDS = 20 V; VGS = −1 V; − 1.1 − pF f = 1 MHz; Tamb = 25 °C 1996 Jul 30 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±30 V VGDO gate-drain voltage open source − −30 V VGSO gate-source voltage open drain − −30 V ID drain current − 25 mA IG gate current − 10 mA Ptot total power dissipation up to Tamb = 75 °C; − 300 mW up to Tamb = 90 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm × 10 mm. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 250 K/W thermal resistance from junction to ambient 200 K/W STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 −30 − V VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.25 −8.0 V VGS gate-source voltage ID = 200 µA; VDS = 15 V BF245A −0.4 −2.2 V BF245B −1.6 −3.8 V BF245C −3.2 −7.5 V IDSS drain current VDS = 15 V; VGS = 0; note 1 BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA IGSS gate cut-off current VGS = −20 V; VDS = 0 − −5 nA VGS = −20 V; VDS = 0; Tj = 125 °C − −0.5 µA Note 1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02. 1996 Jul 30 3, DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 4 − pF Crs reverse transfer capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.1 − pF Cos output capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.6 − pF gis input conductance VDS = 15 V; VGS = 0; f = 200 MHz − 250 − µS gos output conductance VDS = 15 V; VGS = 0; f = 200 MHz − 40 − µS yfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz 3 − 6.5 mS VDS = 15 V; VGS = 0; f = 200 MHz − 6 − mS yrs reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz − 1.4 − mS yos output admittance VDS = 15 V; VGS = 0; f = 1 kHz − 25 − µS fgfs cut-off frequency VDS = 15 V; VGS = 0; gfs = 0.7 of its − 700 − MHz value at 1 kHz F noise figure VDS = 15 V; VGS = 0; f = 100 MHz; − 1.5 − dB RG = 1 kΩ (common source); input tuned to minimum noise MGE785 MGE789 −10 6 handbook, halfpage handbookI, halfpageIDGSS (mA) (nA) 5 −1 typ −10−1 3 −10−2 −10−30050 100 150 −4 −2 T Vj (°C) GS (V) 0 VDS = 0; VGS = −20 V. VDS = 15 V; Tj = 25 °C. Fig.2 Gate leakage current as a function of Fig.3 Transfer characteristics for BF245A; junction temperature; typical values. typical values. 1996 Jul 30 4, MBH555 MGE787 6 15 handbookI, halfpage handbook, halfpageD (mA) I5D(mA) VGS = 0V410 −0.5V251−1 V −1.5V00010 VDS (V) 20 −4 −2 VGS (V) 0 VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.4 Output characteristics for BF245A; Fig.5 Transfer characteristics for BF245B; typical values. typical values. MBH553 MGE788 15 30 handbook, halfpage handbook, halfpage ID ID (mA) (mA) VGS = 0 V 10 20 −0.5 V −1V510 −1.5 V −2 V −2.5V00010 VDS (V) 20 −10 −5 VGS (V) 0 VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.6 Output characteristics for BF245B; Fig.7 Transfer characteristics for BF245C; typical values. typical values. 1996 Jul 30 5, MBH554 MGE775 handbook, halfpage 4handbook, halfpage

I

IDD(mA) (mA) VGS = 0 V20 VGS = 0V2−0.5 V −1 V −2V1−1 V −3 V −1.5 V −4V00010 VDS (V) 20 0 50 100 T (°C) 150j VDS = 15 V; Tj = 25 °C. VDS = 15 V. Fig.8 Output characteristics for BF245C; Fig.9 Drain current as a function of junction typical values. temperature; typical values for BF245A. MGE776 MGE779 15 20 handbook, halfpage handbook, halfpageID ID (mA) (mA) 16 10 VGS = 0 V VGS = 0V5−2 V −1 V −2 V −4V00050 100 T (°C) 150 0 50 100 T (°C) 150j j VDS = 15 V. VDS = 15 V. Fig.10 Drain current as a function of junction Fig.11 Drain current as a function of junction temperature; typical values for BF245B. temperature; typical values for BF245C. 1996 Jul 30 6, MGE778 MGE780324handbook1, 0halfpage 10 handbook1, 0halfpage 10 gis bis brs Crs (µA/V) gis (mA/V) (µA/V) (pF) Crs 102 10 103 1 bis brs 10 1 102 10−1 1 10−1 10 10−2 10 102 103 10 102 103 f (MHz) f (MHz) VDS = 15 V; VGS = 0; Tamb = 25 °C. VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.13 Common source reverse admittance as a Fig.12 Input admittance; typical values. function of frequency; typical values. MGE782 MGE783 10 3 hangdbfso,o k, halfpage handbook 1, 0halfpage 10 −bfs g (mA/V) os bos 8 (µA/V) (mA/V) bos 102 1 gfs gos 10 10−1 −bfs0110−2 10 102 103 10 102 103f (MHz) f (MHz) VDS = 15 V; VGS = 0; Tamb = 25 °C. VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.14 Common-source forward transfer admittance Fig.15 Common-source output admittance as a as a function of frequency; typical values. function of frequency; typical values. 1996 Jul 30 7, MGE777 MGE781 6 1.5 handbook, halfpage handbook, halfpage Cis (pF) Crs (pF) typ typ 0 0.5 0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10 VGS (V) VGS (V) VDS = 20 V; f = 1 MHz; Tamb = 25 °C. VDS = 20 V; f = 1 MHz; Tamb = 25 °C. Fig.16 Input capacitance as a function of Fig.17 Reverse transfer capacitance as a function gate-source voltage; typical values. of gate-source voltage; typical values. MGE791 8 MGE784 handbook, halfpage −10handbVook, halfpage |y | GSoff fs at ID = 10 nA (mA/V) (V) BF245B BF245C −8 BF245A −6 −4 2 BF245C −2 BF245B BF245A 0 −00510 15 20 0 10 20 30 ID (mA) IDSS at VGS = 0 (mA) VDS = 15 V; f = 1 kHz; Tamb = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.18 Forward transfer admittance as a function of Fig.19 Gate-source cut-off voltage as a function of drain current; typical values. drain current; typical values. 1996 Jul 30 8, 3 MGE790 MGE78610 3 handbook, halfpage handbook, halfpage RDSon

F

(kΩ) (dB) typ BF245A BF245B BF245C 10−100−1 −2 −3 −4 1 10 102 103 V (V) f (MHz)GS VDS = 0; f = 1 kHz; Tamb = 25 °C. VDS = 15 V; VGS = 0; RG = 1 kΩ; Tamb = 25 °C. Input tuned to minimum noise. Fig.20 Drain-source on-state resistance as a function of gate-source voltage; Fig.21 Noise figure as a function of frequency; typical values. typical values. 1996 Jul 30 9, PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 1.7 5.2 max 12.7 min 1.4 1 0.48 0.40 4.8 2 max 2.54 0.66 0.56 (1) 2.5 max MBC015 - 1 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.22 TO-92 variant. 1996 Jul 30 10,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 11]
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