Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136X- 500 600 800 bidirectional transient and blocking BT136X- 500F 600F 800F voltage capability and high thermal BT136X- 500G 600G 800G cycling performance. Typical VDRM Repetitive peak off-state 500 600 800 V applications include motor control, voltages industrial and domestic lighting, IT(RMS) RMS on-state current444Aheating and static switching. ITSM Non-repetitive peak on-state 25 25 25 A current PINNING - ...
Author: Perseo Cerda Shared: 8/19/19
Downloads: 1612 Views: 3903

Content

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136X- 500 600 800 bidirectional transient and blocking BT136X- 500F 600F 800F voltage capability and high thermal BT136X- 500G 600G 800G cycling performance. Typical VDRM Repetitive peak off-state 500 600 800 V applications include motor control, voltages industrial and domestic lighting, IT(RMS) RMS on-state current444Aheating and static switching. ITSM Non-repetitive peak on-state 25 25 25 A current

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case 1 main terminal 1 T2 T1 2 main terminal23gate case isolated123G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 VDRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(RMS) RMS on-state current full sine wave; Ths ≤ 92 ˚C - 4 A ITSM Non-repetitive peak full sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 20 ms - 25At= 16.7 ms - 27 A I2t I2t for fusing t = 10 ms - 3.1 A2s dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. February 1996 1 Rev 1.100,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 5.5 K/W without heatsink compound - - 7.2 K/W Rth j-a Thermal resistance in free air - 55 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT136X- ...F ...G IGT Gate trigger current VD = 12 V; IT = 0.1 A T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 11 35 25 50 mA T2- G+ - 30 70 70 100 mA IL Latching current VD = 12 V; IGT = 0.1 A T2+ G+ - 7 20 20 30 mA T2+ G- - 16 30 30 45 mA T2- G- - 5 20 20 30 mA T2- G+ - 7 30 30 45 mA IH Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA VT On-state voltage IT = 5 A - 1.4 1.70 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; 0.25 0.4 - V Tj = 125 ˚C ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA Tj = 125 ˚C February 1996 2 Rev 1.100,

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT136X- ...F ...G dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs off-state voltage Tj = 125 ˚C; exponential waveform; gate open circuit dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/µs commutating voltage IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); - - - 2 - µs time IG = 0.1 A; dIG/dt = 5 A/µs Ptot / W BT136 Ths(max) / C ITSM / A BT136 8 81 30 I I7 86.5 T TSM = 1806192 T time 120 20 5 97.5 Tj initial = 125 C max90 4 103 15 3 108.5 2 114 1 119.55012501234501 10 100 1000 IT(RMS) / A Number of cycles at 50Hz Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.3. Maximum permissible non-repetitive peak on-state current, IT(RMS), where α = conduction angle. on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. ITSM / A BT136 IT(RMS) / A BT136X I ITSM

T

T time 92 C Tj initial = 125 C max 100 3 dI T /dt limit T2- G+ quadrant 10us 100us 1ms 10ms 100ms T / s 0-50 0 50 100 150 Fig.2. Maximum permissible non-repetitive peak Ths / C on-state current ITSM, versus pulse width tp, for Fig.4. Maximum permissible rms current IT(RMS) , sinusoidal currents, tp ≤ 20ms. versus heatsink temperature Ths. February 1996 3 Rev 1.100, IT(RMS) / A BT136 IL(Tj) 12 IL(25 C) TRIAC 2.5 1.54120.5 0.01 0.1 1 10 0-50 0 50 100 150 surge duration / s Tj / C

Fig.5. Maximum permissible repetitive rms on-state Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

current IT(RMS), versus surge duration, for sinusoidal versus junction temperature Tj. currents, f = 50 Hz; Ths ≤ 92˚C. IH(Tj) VGT(Tj) IH(25C) TRIAC3 VGT(25 C) BT136 1.6 2.5 1.4 1.2 1.5 0.8 0.5 0.6 -50 0 50 100 150 0.4 -50 0 50 100 150 Tj / C Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

Fig.6. Normalised gate trigger voltage versus junction temperature Tj. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

IGT(Tj) IT / A BT136 3 IGT(25 C) BT136 12 Tj = 125 C T2+ G+ Tj = 25 C typ max 2.5 T2+ G- Vo = 1.27 V T2- G- Rs = 0.091 ohms T2- G+ 8 1.56140.5200-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. February 1996 4 Rev 1.100

, Zth j-hs (K/W) BT136 dVcom/dt (V/us) 10 1000 with heatsink compound without heatsink compound off-state dV/dt limit BT136...G SERIES unidirectional BT136 SERIES 1 bidirectional 100 BT136...F SERIES 0.1PtDp10 t dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4 A/ms 0.01 10us 0.1ms 1ms 10ms 0.1s 1s 10s 10 50 100 150 tp / s Tj / C

Fig.11. Transient thermal impedance Zth j-hs, versus Fig.12. Typical commutation dV/dt versus junction

pulse width tp. temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

February 1996 5 Rev 1.100

,

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max Recesses (2x) 2.8 2.5 6.4 0.8 max. depth 15.8 15.8 19 seating max max. max. plane 3 max. not tinned 2.5 13.5 min. 1230.4 M 1.0 (2x) 0.6 2.54 0.90.5 0.7 5.08 2.5 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. The improved isolation rating applies only to the SOT186 version A envelope. February 1996 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Rev 1.100]
15

Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate triacs SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a full pack, plastic envelope, intended for use in general purpose BT136F- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136F- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicat
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136F- 500 600 800 bidirectional transient and blocking BT136F- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT136- 500 600 800 bidirectional transient and blocking BT136- 500F 600F 800F voltage capability and high thermal BT136- 500G 6
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500E 600E general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500D 600D general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT134W- 500 600 800 applications requiring high VDRM Repetitive peak off-state 500 600 800 V bidirectional transient and bloc
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT134- 500 600 800 bidirectional transient and blocking BT134- 500F 600F 800F voltage capability and high thermal BT134- 500G 6
DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor
DISCRETE SEMICONDUCTORS DATA SHEET BSS92 P-channel enhancement mode vertical D-MOS transistor Product specification 1997 Jun 19 Supersedes data of April 1995 File under Discrete Semiconductors, SC13b FEATURES PINNING - TO-92 (SOT54) variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTI
P-Channel 200-V (D-S) MOSFETs
P-Channel 200-V (D-S) MOSFETs Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Secondary Breakdown Free: –2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ V = -5V.transistors are produced using Fairchild's proprietary, high GSBSS110: -0.17A, -50V. RDS(ON) = 10Ω
SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Avalanche rated Continuous drain current ID -0.33 A
SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance RDS(on) 2 Ω • Avalanche rated Continuous drain current ID -0.33 A • Logic Level • dv/dt rated 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN
ON Semiconductor High Voltage Transistor BSS63LT1 PNP Silicon
ON Semiconductor High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage VCER Vdc RBE = 10 kΩ –110 1 Collector Current — Continuous IC –100 mAdc 2 THERMAL CHARACTERISTICS CASE 318–08, STYLE 6 Characterist
HITFET=II.Generation BSP 77 Smart Lowside Power Switch Application
HITFET=II.Generation BSP 77 Smart Lowside Power Switch Features Product Summary Logic Level Input Drain source voltage VDS 42 V Input Protection (ESD) On-state resistance RDS(on) 100 m Thermal shutdown with Nominal load current ID(Nom) 2.17 A auto restart Clamping energy EAS 250 mJ Overload protecti
Mini PROFET® BSP 452
MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis 4 • Overload protection • Overvoltage protection • Switching inductive load 3 • Clamp of negative output voltage with inductive loads 2 • Undervoltage shutdown 1 • Maximum current
P-Channel 60-V (D-S) MOSFET
P-Channel 60-V (D-S) MOSFET Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4 –0.12 VP0610L –60 10 @ VGS = –10 V –1 to –3.5 –0.18 VP0610T –60 10 @ VGS = –10 V –1 to –3.5 –0.12 BS250 –60 10 @ VGS = –10
Order this document SEMICONDUCTOR TECHNICAL DATA by BRY55-30/D
Order this document SEMICONDUCTOR TECHNICAL DATA by BRY55-30/D PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (
Order this document SEMICONDUCTOR TECHNICAL DATA by BRX44/D
Order this document SEMICONDUCTOR TECHNICAL DATA by BRX44/D PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-
GENERAL DESCRIPTION QUICK REFERENCE DATA OUTLINE - SOD84 SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT diodes in an axial, hermetically sealed, glass envelope. These BR211-100 to 280 devices feature controlled breakover V(BO) Breakover voltage 100 280 V voltage and high holding current IH Hold
DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended • Emitter ballasting resistors for an optimum tem
DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT171A • Internal input matching for wideband operation and high PIN DESCRIPTION power gain 1 emitter • P
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Internal input and output matching for easy matching, Two NPN silicon planar epitaxial transistors in push-pull high gain and ef
DATA SHEET BLV904 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Preliminary specification 1996 Feb 08 File under Discrete Semiconductors, SC08b FEATURES APPLICATIONS • Emitter ballasting resistors for optimum • Common emitter class-AB operation in base stations in temperature profile the 820 to 960 M
DATA SHEET BLV862 UHF linear push-pull power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification 1996 Jun 11 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double stage internal input and output matching PIN SYMBOL DESCRIPTION networks for an optimum wideband capabilit
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideba
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input handbook, halfpage • Excellent return loss properties 2 common •