Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These devices IT(RMS) RMS on-state current44Aare intended to be interfaced directly ITSM Non-repetitive peak on-state current 25 25 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - SOT82 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 T2 T1 ...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These devices IT(RMS) RMS on-state current44Aare intended to be interfaced directly ITSM Non-repetitive peak on-state current 25 25 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

PINNING - SOT82 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION 1 main terminal 1 T2 T1 2 main terminal23gate tab main terminal2123G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 VDRM Repetitive peak off-state - 500 1 6001 V voltages IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A ITSM Non-repetitive peak full sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 20 ms - 25At= 16.7 ms - 27 A I2t I2t for fusing t = 10 ms - 3.1 A2s dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. February 1996 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W Rth j-a Thermal resistance in free air - 100 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current VD = 12 V; IT = 0.1 A T2+ G+ - 2.0 5 mA T2+ G- - 2.5 5 mA T2- G- - 2.5 5 mA T2- G+ - 5.0 10 mA IL Latching current VD = 12 V; IGT = 0.1 A T2+ G+ - 1.6 10 mA T2+ G- - 4.5 15 mA T2- G- - 1.2 10 mA T2- G+ - 2.2 15 mA IH Holding current VD = 12 V; IGT = 0.1 A - 1.2 10 mA VT On-state voltage IT = 5 A - 1.4 1.70 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 5 - V/µs off-state voltage exponential waveform; RGK = 1 kΩ tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dIG/dt = 5 A/µs February 1996 2 Rev 1.100, Ptot / W BT136 Tmb(max) / C IT(RMS) / A BT136 8 10157104 107 C = 180461107 5 90 11034113 3 11622119 1 122 0 1250012345-50 0 50 100 150 IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,

on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb. ITSM / A BT136 IT(RMS) / A BT136 1000 12 I IT TSM T time Tj initial = 125 C max 8 100 6 dI T /dt limit T2- G+ quadrant 10 0 10us 100us 1ms 10ms 100ms 0.01 0.1 1 10 T / s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state

on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 107˚C. ITSM / A BT136 VGT(Tj) 30 VGT(25 C) BT136 1.6 I IT TSM T time 1.4 20 Tj initial = 125 C max 1.2 15 1 10 0.8 5 0.6 0 0.4 1 10 100 1000 -50 0 50 100 150 Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage

on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. sinusoidal currents, f = 50 Hz.

February 1996 3 Rev 1.100

, IGT(Tj) IT / A BT136 IGT(25 C) BT136D 12 3 Tj = 125 C T2+ G+ Tj = 25 C typ max T2+ G- 10 2.5 T2- G- Vo = 1.27 VRs = 0.091 ohms T2- G+ 8 1.5140.5200-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT136 IL(25 C) TRIAC 10 3 unidirectional 2.5 bidirectional 1.5 0.1PtDp1 0.5t00.01 -50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus

versus junction temperature Tj. pulse width tp. IH(Tj) dVD/dt (V/us)1000 IH(25C) TRIAC 2.5 1.5 1 10 0.501-50 0 50 100 150 0 50 100 150 Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,

versus junction temperature Tj. dVD/dt versus junction temperature Tj.

February 1996 4 Rev 1.100

,

MECHANICAL DATA

Dimensions in mm Net Mass: 0.8 g mounting 2.8 7.8 base 2.3 max 3.75 3.1 2.5 11.1 max 1) 2.54 max 1.2 15.3 min1234.58 0.5 2.29 0.88 1) Lead dimensions within this max zone uncontrolled. Fig.13. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1996 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 6 Rev 1.100]
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