Download: P-Channel 200-V (D-S) MOSFETs

P-Channel 200-V (D-S) MOSFETs Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Secondary Breakdown Free: –220 V Full-Voltage Operation Hammers, Displays, Memories, Low On-Resistance: 11.5 Low Offset Voltage Transistors, etc. Low-Power/Voltage Driven Easily Driven Without Buffer Power Supply, Converters Excellent Thermal Stability No High-Temperature Motor Control “Run-Away” Switches TO-226AA TO-9...
Author: Cooper Shared: 8/19/19
Downloads: 224 Views: 3545

Content

P-Channel 200-V (D-S) MOSFETs

Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Secondary Breakdown Free: –220 V Full-Voltage Operation Hammers, Displays, Memories, Low On-Resistance: 11.5 Low Offset Voltage Transistors, etc. Low-Power/Voltage Driven Easily Driven Without Buffer Power Supply, Converters Excellent Thermal Stability No High-Temperature Motor Control “Run-Away” Switches TO-226AA TO-92-18CD (TO-92) (TO-18 Lead Form) S 1 1Device Marking S Device Marking Front View Front View “S” VPD2“S” BSG 2 2020L S92 xxyy xxyy D “S” = Siliconix Logo G “S” = Siliconix Logo3 3xxyy = Date Code xxyy = Date Code Top View Top View VP2020L BSS92 Parameter Symbol VP2020L BSS92 Unit Drain-Source Voltage VDS –200 –200

V

Gate-Source Voltage VGS 20 20 TA= 25C –0.12 –0.15 Continuous Drain Current (TJ = 150C) IT = 100 C DA –0.08 –0.09 A Pulsed Drain Currenta IDM –0.48 –0.6 TA= 25C 0.8 1.0 Power DissipationPT= 100CD

W

A 0.32 0.4 Thermal Resistance, Junction-to-Ambient RthJA 156 125 C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C Notes a. Pulse width limited by maximum junction temperature. S-04279—Rev. E, 16-Jun-01 11-1,

Limits

VP2020L BSS92

Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static

Drain-Source VGS = 0 V, ID = –10 A –220 Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 A –220 –200 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –1 mA –1.9 –0.8 –2.5 –0.8 –2.8 VDS = 0 V, VGS = 20 V 10 100 Gate-Body Leakage IGSS nATJ = 125C 50 VDS = 0.8 x V(BR)DSS, VGS = 0 V –1 TJ = 125C –100 Zero Gate Voltage IDSS VDS = –200 V, VDrain Current GS = 0 V –60 A TJ = 125C –200 VDS = –60 V, VGS = 0 V –0.2 On-State Drain Currentb ID(on) VDS = –10 V, VGS = –4.5 V –250 –100 mA VGS = –10 V, ID = –0.1 A 11.5 20 VGS = –4.5 V, ID = –0.1 A 15 20 Drain-Source T = 125C 28 40 On-Resistanceb rDS(on) J VGS = –4.5 V, ID = –0.05 A 15 TJ = 125C 28 Forward VDS = –10 V, ID = –0.1 A 170 100 Transconductanceb gfs mSVDS = –25 V, ID = –0.1 A 170 60 Diode Forward Voltage VSD IS = –0.3 A, VGS = 0 V –0.9 –1.2 V

Dynamic

Input Capacitance Ciss 30 70 130 Output Capacitance C VDS = –25 V, VGS = 0 Voss 10 20 30f = 1 MHz pF Reverse Transfer Capacitance Crss 3 10 15

Switchingc

td(on) 6 10 Turn-On Time tr VDD = –25 V, RL = 250 8 15 ID –0.1 A, VGEN = –10 V ns td(off) R = 25 18 30 Turn-Off Time G tf 17 25 Notes a. For DESIGN AID ONLY, not subject to production testing. VPDQ20 b. Pulse test: PW 300 s duty cycle 2%. c. Switching time is essentially independent of operating temperature. 11-2 S-04279—Rev. E, 16-Jun-01, Ohmic Region Characteristics Output Characteristics for Low Gate Drive –500 –100 –400 –80 VGS = –10 V VGS = –4 V –3.6 V –6 V –300 –60 –5 V –4.5 V –200 –4 V –40 –3 V –100 –3 V –20 –2V000–1 –2 –3 –4 –5 0 –0.4 –0.8 –1.2 –1.6 –2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage –100 20 VDS = –15 V 25C –80 –60 14 ID = –0.1 A –40

T

–20 J = 125C 10 –0.05 A –0.02 A –55C080–1 –2 –3 –4 –5 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) Normalized On-Resistance On-Resistance vs. Junction Temperature 25 2.25 VGS = –4.5VI= –0.1 A 2.00 D VGS = –4.5 V 1.75 –10 V 1.50 1.25 1.00 0.75 0 0.50 0 –50 –100 –150 –200 –250 –50 –10 30 70 110 150 VGS – Gate-Source Voltage (V) TJ – Junction Temperature (C) S-04279—Rev. E, 16-Jun-01 11-3 rDS(on) – Drain-Source On-Resistance ( Ω ) ID – Drain Current (mA) ID – Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA), Threshold Region Capacitance –10.0 120 VGS = 0 V VDS = –5Vf= 1 MHz –1.0 80 TJ = 150C –0.1 25 C 40 Ciss 125C –55C 20 Coss Crss –0.0100–1.0 –2.0 –3.0 –3.5 0 –10 –20 –30 –40 –50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching –12 100 tf VDD = –25VI= –0.1 A RG = 25 D –10 VGS = 0 to –10 V td(off) –8 VDS = –100 V –6 10 t –160Vrtd(on) –4 –20100.5 1.0 1.5 2.0 2.5 –10 –100 –1000 Qg – Total Gate Charge (nC) ID – Drain Current (A) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 t1 1. Duty Cycle, D = t2 0.01 2. Per Unit Base = RthJA = 156C/W 3. TJM – TA = PDMZ (t)thJA Single Pulse 0.01 0.1 1.0 10 1001K10 K t1 – Square Wave Pulse Duration (sec) 11-4 S-04279—Rev. E, 16-Jun-01 Normalized Effective Transient VGS – Gate-to-Source Voltage (V) ID – Drain Current (mA) Thermal Impedance t – Switching Time (ns) C – Capacitance (pF)]
15

Similar documents

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ V = -5V.transistors are produced using Fairchild's proprietary, high GSBSS110: -0.17A, -50V. RDS(ON) = 10Ω
SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Avalanche rated Continuous drain current ID -0.33 A
SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance RDS(on) 2 Ω • Avalanche rated Continuous drain current ID -0.33 A • Logic Level • dv/dt rated 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN
ON Semiconductor High Voltage Transistor BSS63LT1 PNP Silicon
ON Semiconductor High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage VCER Vdc RBE = 10 kΩ –110 1 Collector Current — Continuous IC –100 mAdc 2 THERMAL CHARACTERISTICS CASE 318–08, STYLE 6 Characterist
HITFET=II.Generation BSP 77 Smart Lowside Power Switch Application
HITFET=II.Generation BSP 77 Smart Lowside Power Switch Features Product Summary Logic Level Input Drain source voltage VDS 42 V Input Protection (ESD) On-state resistance RDS(on) 100 m Thermal shutdown with Nominal load current ID(Nom) 2.17 A auto restart Clamping energy EAS 250 mJ Overload protecti
Mini PROFET® BSP 452
MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis 4 • Overload protection • Overvoltage protection • Switching inductive load 3 • Clamp of negative output voltage with inductive loads 2 • Undervoltage shutdown 1 • Maximum current
P-Channel 60-V (D-S) MOSFET
P-Channel 60-V (D-S) MOSFET Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4 –0.12 VP0610L –60 10 @ VGS = –10 V –1 to –3.5 –0.18 VP0610T –60 10 @ VGS = –10 V –1 to –3.5 –0.12 BS250 –60 10 @ VGS = –10
Order this document SEMICONDUCTOR TECHNICAL DATA by BRY55-30/D
Order this document SEMICONDUCTOR TECHNICAL DATA by BRY55-30/D PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (
Order this document SEMICONDUCTOR TECHNICAL DATA by BRX44/D
Order this document SEMICONDUCTOR TECHNICAL DATA by BRX44/D PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-
GENERAL DESCRIPTION QUICK REFERENCE DATA OUTLINE - SOD84 SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT diodes in an axial, hermetically sealed, glass envelope. These BR211-100 to 280 devices feature controlled breakover V(BO) Breakover voltage 100 280 V voltage and high holding current IH Hold
DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended • Emitter ballasting resistors for an optimum tem
DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT171A • Internal input matching for wideband operation and high PIN DESCRIPTION power gain 1 emitter • P
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Internal input and output matching for easy matching, Two NPN silicon planar epitaxial transistors in push-pull high gain and ef
DATA SHEET BLV904 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Preliminary specification 1996 Feb 08 File under Discrete Semiconductors, SC08b FEATURES APPLICATIONS • Emitter ballasting resistors for optimum • Common emitter class-AB operation in base stations in temperature profile the 820 to 960 M
DATA SHEET BLV862 UHF linear push-pull power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification 1996 Jun 11 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double stage internal input and output matching PIN SYMBOL DESCRIPTION networks for an optimum wideband capabilit
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideba
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input handbook, halfpage • Excellent return loss properties 2 common •
DISCRETE SEMICONDUCTORS DATA SHEET BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 1999 Mar 30
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 1999 Mar 30 FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2, 3 com
DISCRETE SEMICONDUCTORS DATA SHEET BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • G
DISCRETE SEMICONDUCTORS DATA SHEET BGY43 VHF power amplifier module Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY43 VHF power amplifier module Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT132B • Broadband VHF amplifier PIN DESCRIPTION • 13 W output power 1 RF input handbook, halfpage • Direct o
DISCRETE SEMICONDUCTORS DATA SHEET BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules Product specification 1996 Jun 06 Supersedes data of May 1991
DISCRETE SEMICONDUCTORS DATA SHEET BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09 BGY32; BGY33; VHF power amplifier modules BGY35; BGY36 FEATURESS PINNING - SOT132B • Broadband VHF amplifie
DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification 1996 May 13 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification 1996 May 13 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT321B • 6 V nominal supply voltage PIN DESCRIPTION • 2 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 V
DATA SHEET BGY209 UHF amplifier module
DISCRETE SEMICONDUCTORS DATA SHEET BGY209 UHF amplifier module Objective specification 1996 May 29 File under Discrete Semiconductors, SC09 FEATURES PINNING • 4.8 V nominal supply voltage PIN DESCRIPTION • 2.8 W output power 1 RF input • Easy output power control by DC voltage. 2 VC 3 VS APPLICATION
BTA/BTB24
BTA/BTB24, BTA25, BTA26 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: A2 Symbol Value Unit A2 A2 IT(RMS) 25AGA1 VDRM/VRRM 600 and 800 V A1 A1 A2 A2IGGGT (Q1) 35 to 50 mA TO-220AB A2 TO-220AB DESCRIPTION Insulated (BTB24)(BTA24) Available either in through-hole of surface and T25 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA225- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA216X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA216- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA212X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA212- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA208X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA208- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w