Download: ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ V = -5V.transistors are produced using Fairchild's proprietary, high GSBSS110: -0.17A, -50V. RDS(ON) = 10Ω @ V = -10Vcell density, DMOS technology. This very high density GS process is designed to minimize on-state resistance, provide Voltage controlled p-channel small signal switch. rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications High ...
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May 1999

BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor

General Description Features These P-Channel enhancement mode power field effect BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ V = -5V.transistors are produced using Fairchild's proprietary, high GSBSS110: -0.17A, -50V. RDS(ON) = 10Ω @ V = -10Vcell density, DMOS technology. This very high density GS process is designed to minimize on-state resistance, provide Voltage controlled p-channel small signal switch. rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications High density cell design for low RDS(ON) . requiring up to 0.17A DC and can deliver pulsed currents up High saturation current. to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch. _

S G D

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BSS84 BSS110 Units VDSS Drain-Source Voltage -50 V VDGR Drain-Gate Voltage (RGS < 20 KΩ) -50 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous @ TA = 30/35 oC -0.13 -0.17 A - Pulsed @ TA = 25 oC -0.52 -0.68 PD Maximum Power Dissipation TA = 25°C 0.36 0.63 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C TL Maximum lead temperature for soldering 300 °C purposes, 1/16" from case for 10 seconds THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient 350 200 °C/WθJA © 1997 Fairchild Semiconductor Corporation BSS84 Rev. C1 / BSS110. Rev. A2, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA All -50 V IDSS Zero Gate Voltage Drain Current VDS = -50 V, All -15 µA VGS = 0 V TJ = 125°C -60 µA VDS = -25 V, VGS = 0 V -0.1 µA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All -10 nA ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA All -0.8 -1.75 -2 V RDS(ON) Static Drain-Source On-Resistance V BSS84GS = -5V, ID = -0.10 A 3.2 10 Ω VGS = -10 V, ID = -0.17 A BSS110 2.2 10 gFS Forward Transconductance VDS = -25 V, ID = -0.10A BSS84 0.05 0.27 S VDS = -10 V, ID = -0.17 A BSS110 0.05 0.29 DYNAMIC CHARACTERISTICS

C Input Capacitance VDS = -25 V, VGS = 0 V, BSS84 37 45 pFiss

f = 1.0 MHz BSS110 37 40

C Output Capacitance All 16 25 pFoss C Reverse Transfer Capacitance All 5 12 pFrss

SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time VDD = -30 V, ID = -0.27 A, All 12 nS Turn - On Rise Time VGS = -10 V, Rt GEN = 50 Ω All 50 nS r tD(off) Turn - Off Delay Time All 10 nS t Turn - Off Fall Time All 25 nSf DRAIN-SOURCE DIODE CHARACTERISTICS IS Continuous Source Diode Current BSS84 -0.13 A BSS110 -0.17 ISM Maximum Pulsed Source Diode Current (Note 1) BSS84 -0.52 A BSS110 -0.68 VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.26 A (Note 1) BSS84 -0.95 -1.2VVBSS110GS = 0 V, IS = -0.34 A (Note 1) -1 -1.2 Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. BSS84 Rev. C1 / BSS110. Rev. A2,

Typical Electrical Characteristics

-1 3 VG S = -10V -8.0 -6.0VGS= -3V -0.8 -5.0 2.5 -3.5 -4.5 -4 .0 -0.6 -4.0 2 -4.5 -5.0 -0.4 -3.5 1.5 -6 .0 -8 .0 -3.0 -0.2 1 -10 -2.5 0.5 0 -1 -2 -3 -4 -5 -6 -0.2 -0.4 -0.6 -0.8 -1 VD S , DRAIN-SOURCE VOLTAGE (V) I , DRAIN CURRENT (A)D

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage 1.63I= -0.13A VGDS= -10V 1.4VGS= -10V 2.5 1.22T= 125°CJ 1 1.5 25°C 0.8 1 -55°C 0.6 0.5 -50 -25 0 25 50 75 100 125 150 -0.2 -0.4 -0.6 -0.8 -1 TJ , JUNCTION TEMPERATURE (°C) I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation

with Temperature with Drain Current and Temperature -1 1.1VDS= VGSVDS= -10V TJ = -55°C 25°C 125°CID= -1m A -0 .8 1.05 -0 .6 1 -0 .4 0.95 -0 .2 0.9 0.85 0 -2 -4 -6 -8 -50 -25 0 25 50 75 100 125 150 VG S , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEM PERATURE (°C)

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation

with Temperature BSS84 Rev. C1 / BSS110. Rev. A2ID, DRAIN CURRENT (A) RDS( O N ) , NORMALIZEDID, DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE Vt h , NORMALIZEDRDS( o n ) , NORMALIZEDRDS( o n ) , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE,

Typical Electrical Characteristics (continued)

1.11V= 0VID= -250µA 0.5

GS

1.05 0.2 0.1 TJ = 125°C 0.05 25°C 1 -55°C 0.01 0.95 0.005 0.9 0.001 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) -VS D , BODY DIODE FORWARD VOLTAGE (V)J

Figure 7. Breakdown Voltage Figure 8. Body Diode Forward Voltage Variation with Temperature Variation with Source Current and Temperature

70 10 50CissID= -0.13AVDS= -10V -20V 30 -40V 20CossCrss f = 1 MHz23VGS= 0V200.1 0.2 0.512510 20 30 50 0 0.5 1 1.5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics VDD t on toff

t d(on) t tr d(off) t f

VIN RL 90% 90% D VOUT V V OUTGS R 10% 10%GEN G DUT

90%

V S IN 50% 50%

10%

PULSE W IDTH INVERTED Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

BSS84 Rev. C1 / BSS110. Rev. A2 BVDSS, NORMALIZEDCAPACITANCE (pF) DRAIN-SOURCE BREAKDOWN VOLTAGE -I , REVERSE DRAIN CURRENT (A)

S

-VGS, GATE-SOURCE VOLTAGE (V),

Typical Electrical Characteristics (continued)

0.52TJ= -55°C 1 10 0.4 0u 25°C s0.5 it Lim 1m N) s S(OD 1R 0m 0.3 s 125°C 100 0.1ms1s 0.2 0.05 10s VG S = -10V DC 0.1 SINGLE PULSE V = -10V T = 25°CDS 0.01A00.005 -0.2 -0.4 -0.6 -0.8 -112510 20 30 50 80ID, DRAIN CURRENT (A) - VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 13. Transconductance Variation with Drain Figure 14. Maximum Safe Operating Area Current and Temperature

0.5 D = 0.5 0.2 0 .2RθJA(t) = r(t) * RθJAo0.1 0.1Rθ= 350 C/WJA 0.05 0.05 0.02 P(pk) 0.01 0.01 t1t2Single Pulse TJ - T A = P * RθJA(t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec)

Figure 15. Transient Thermal Response Curve Note : Characterization performed using a circuit board with 175oC/W

typical case-to-ambient thermal resistance. BSS84 Rev. C1 / BSS110. Rev. A2 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE g , TRANSCONDUCTANCE (SIEMENS)

FS

-I D , DRAIN CURRENT (A),

TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option)

(FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 2000, Rev. B,

SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description:

SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon fil led) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent.

Antistatic Cover Tape These reeled parts in standard option are shipped with3,000 units per 7" or 177cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti- static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchil d logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts

Human Readable shipped.Embossed Label Carrier Tape

3P 3P 3P 3P SOT-23 Packaging Information Standard Packaging Option (no flow code) D87Z Packaging type TNR TNR SOT-23 Unit Or ientation Qty per Reel/Tube/Bag 3,000 10,000 Reel Size 7" Dia 13" Box Dimension (mm) 187x107x183 343x343x64 343mm x 342mm x 64mm Human Readable Label Max qty per Box 24,000 30,000

Intermediate box for L87Z Option

Weight per unit (gm) 0.0082 0.0082 Weight per Reel (kg) 0.1175 0.4006 Note/Comments

Human Readable Label sample Human readable Label

187mm x 107mm x 183mm

SOT-23 Tape Leader and Trailer Intermediate Box for Standard Option Configuration: Figure 2.0

Carrier Tape Cover Tape ComponentsTrailer Tape Leader Tape 300mm minimum or 500mm minimum or 75 empty pockets 125 empty pockets

September 1999, Rev. C

,

SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0

P0 P2 D0 D1

T

E1FWE2 B0 Wc Tc P1 A0 K0

User Direction of Feed

Dimensions are in millimeter Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc SOT-23 3.15 2.77 8.0 1.55 1.125 1.75 6.25 3.50 4.0 4.0 1.30 0.228 5.2 0.06 (8mm) +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.125 +/-0.10 min +/-0.05 +/-0.1 +/-0.1 +/-0.10 +/-0.013 +/-0.3 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 0.5mm 20 deg maximum maximum Typical component cavity 0.5mm B0 center line maximum 20 deg maximum component rotation Typical Sketch A (Side or Front Sectional View) component Sketch C (Top View) Component Rotation A0 center line Component lateral movement Sketch B (Top View)

SOT-23 Reel Configuration: Figure 4.0 Component Rotation

W1 Measured at Hub Dim A Max Dim A See detail AA max Dim N 7" Diameter Option B Min Dim C See detail AA Dim D W3 min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Reel Tape Size Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 0.059 512 +0.020/-0.008 0.795 2.165 0.331 +0.059/-0.000 0.567 0.311 – 0.429177.8 1.5 13 +0.5/-0.2 20.2 55 8.4 +1.5/0 14.4 7.9 – 10.9 8mm 13" Dia 13.00 0.059 512 +0.020/-0.008 0.795 4.00 0.331 +0.059/-0.000 0.567 0.311 – 0.429330 1.5 13 +0.5/-0.2 20.2 100 8.4 +1.5/0 14.4 7.9 – 10.9

September 1999, Rev. C

,

SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 (FS PKG Code 49)

1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1,

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ SyncFET™ CoolFET™ MICROWIRE™ TinyLogic™ CROSSVOLT™ POP™ UHC™ E2CMOSTM PowerTrench VCX™ FACT™ QFET™ FACT Quiet Series™ QS™ FAST® Quiet Series™ FASTr™ SuperSOT™-3 GTO™ SuperSOT™-6 HiSeC™ SuperSOT™-8 DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D]
15

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