Download: SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Avalanche rated Continuous drain current ID -0.33 A

SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance RDS(on) 2 Ω • Avalanche rated Continuous drain current ID -0.33 A • Logic Level • dv/dt rated 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 83 P SOT-23 Q67041-S1416 YAsGSDMaximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID A TA = 25 °C -0.33 TA = 70 °C -0.27 Pulsed drain current ID puls -1.32 TA = 25 °C Avalanche energy, single pulse EAS 9.5 mJ ID = -0.33 A , VDD...
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SIPMOS Small-Signal-Transistor

Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance RDS(on) 2 Ω • Avalanche rated Continuous drain current ID -0.33 A • Logic Level • dv/dt rated 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 83 P SOT-23 Q67041-S1416 YAsGSDMaximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID A TA = 25 °C -0.33 TA = 70 °C -0.27 Pulsed drain current ID puls -1.32 TA = 25 °C Avalanche energy, single pulse EAS 9.5 mJ ID = -0.33 A , VDD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax EAR 0.036 Reverse diode dv/dt dv/dt 6 kV/µs IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W TA = 25 °C Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 1999-09-16, Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 150 K/W ( Pin 3 ) SMD version, device on PCB: RthJA K/W @ min. footprint - - 350 @ 6 cm2 cooling area 1) - - 300 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS -60 - - V VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS VGS(th) -1 -1.5 -2 ID = -80 µA Zero gate voltage drain current IDSS µA VDS = -60 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 125 °C - -10 -100 Gate-source leakage current IGSS - -10 -100 nA VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) - 23ΩVGS = -4.5 V, ID = -0.27 A Drain-Source on-state resistance RDS(on) - 1.42ΩVGS = -10 V, ID = -0.33 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-16, Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs 0.24 0.47 - S VDS≥2*ID*RDS(on)max , ID = -0.27 A Input capacitance Ciss - 62 78 pF VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance Coss - 19 24 VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - 7 9 VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) - 23 35 ns VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 Ω Rise time tr - 71 106 VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 Ω Turn-off delay time td(off) - 56 70 VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 Ω Fall time tf - 61 76 VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 Ω Page 3 1999-09-16, Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge Qgs - 0.12 0.18 nC VDD = -48 V, ID = -0.33 A Gate to drain charge Qgd - 1.1 1.65 VDD = -48 , ID = -0.33 A Gate charge total Qg - 2.38 3.57 VDD = -48 V, ID = -0.33 A, VGS = 0 to -10 V Gate plateau voltage V(plateau) - -2.94 - V VDD = -48 V , ID = -0.33 A Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current IS - - -0.33 A TA = 25 °C Inverse diode direct current,pulsed ISM - - -1.32 TA = 25 °C Inverse diode forward voltage VSD - -0.84 -1.1 V VGS = 0 V, IF = -0.33 Reverse recovery time trr - 59.4 89 ns VR = -30 V, IF=IS , diF/dt = 80 A/µs Reverse recovery charge Qrr - 37.5 56 µC VR = -30 V, IF=lS , diF/dt = 80 A/µs Page 4 1999-09-16,

Power Dissipation Drain current Ptot = f (TA) ID = f (TA)

parameter: VGS≥ 10 V BSS 83 P BSS 83 P 0.38 -0.36

W A

0.32 -0.28 0.28 -0.24 0.24 -0.20 0.20 0.16 -0.16 0.12 -0.12 0.08 -0.08 0.04 -0.04 0.00 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TA TA

Safe operating area Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp)

parameter : D = 0 , TA = 25 °C parameter : D = tp/T BSS 83 P BSS 83 P -10 1 103AK/W tp = 8 8 . 0µs100 µs -10 0 / I D 102VDS = ) (onRD

S

1 ms -10 -1 101D= 0.50 10 ms 0.20 0.10 -10 -2 10 0 0.05 single pulse 0.02 DC 0.01 -10 -3 10 -1 -10 -1 -10 0 -101V-10 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 102s10 4 VDS tp Page 5 1999-09-16 ID Ptot ZthJC ID,

Typ. output characteristics Typ. drain-source-on-resistance ID = f (VDS) RDS(on) = f (ID)

parameter: tp = 80 µs parameter: VGS BSS 83 P BSS 83 P -0.80 Ptot = 0W 6.5ΩabcAjikhglf e VGS [V] d 5.5 a -2.5 b -3.0 5.0 -0.60 c -3.5 d -4.0 4.5 c -0.50 e -4.5 4.0 f -5.0 g -5.5 3.5 -0.40 h -6.0 3.0 i -6.5 -0.30 j -7.0 2.5bk-8.0 l -10.0 2.0 d -0.20 1.5 elfjhki g 1.0 -0.10 a VGS [V] = 0.5abcdefghijkl-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 0.00 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A -0.65

VDS ID Typ. transfer characteristics ID= f ( VGS ) Typ. forward transconductance VDS≥ 2 x ID x RDS(on)max gfs = f(ID); Tj=25°C

parameter: tp = 80 µs parameter: gfs -1.2 0.70AS-1.0 0.60 0.55 -0.9 0.50 -0.8 0.45 -0.7 0.40 -0.6 0.35 -0.5 0.30 0.25 -0.4 0.20 -0.3 0.15 -0.2 0.10 -0.1 0.05 0.0 0.00 0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A -0.70 VGS ID

Page 6 1999-09-16

ID ID gfs RDS(on),

Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj)

parameter : ID = -0.33 A, VGS = -10 V parameter: VGS = VDS, ID = -80 µA BSS 83 P 5.5 -3.0

Ω V

4.5 4.0 98% -2.0 3.5 3.0 typ -1.5 2.5 98% 2.0 2% typ -1.0 1.5 1.0 -0.5 0.5 0.0 0.0 -60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160 Tj Tj

Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD)

parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs BSS 83 P 10 3 -10 1 pF A 10 2 -10 0 Ciss Coss 10 1 -10 -1 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 -10 -2 0 -5 -10 -15 -20 -25 V -35 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 1999-09-16 C RDS(on) IF VVVVGGGGSSSS((((tttthhhh)))),

Avalanche Energy EAS = f (Tj) Typ. gate charge

parameter: ID = -0.33 A , VDD = -25 V VGS = f (QGate)

RGS = 25 Ω parameter: ID = -0.33 A pulsed

BSS 83 P 10 -16 mJ

V

-12 -10 5 -8 -6 0,2 VDS max 0,8 VDS max -4 -20025 45 65 85 105 125 °C 165 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4 Tj QGate

Drain-source breakdown voltage V(BR)DSS = f (Tj)

BSS 83 P -72

V

-68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Page 8 1999-09-16 V(BR)DSS EAS

VGS

, Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-09-16]
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