Download: HITFET=II.Generation BSP 77 Smart Lowside Power Switch Application

HITFET=II.Generation BSP 77 Smart Lowside Power Switch Features Product Summary Logic Level Input Drain source voltage VDS 42 V Input Protection (ESD) On-state resistance RDS(on) 100 m Thermal shutdown with Nominal load current ID(Nom) 2.17 A auto restart Clamping energy EAS 250 mJ Overload protection Short circuit protection Overvoltage protection 4 Current limitation Analog driving possible21VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical rel...
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HITFET=II.Generation BSP 77

Smart Lowside Power Switch

Features Product Summary Logic Level Input Drain source voltage VDS 42 V Input Protection (ESD) On-state resistance RDS(on) 100 m Thermal shutdown with Nominal load current ID(Nom) 2.17 A auto restart Clamping energy EAS 250 mJ Overload protection Short circuit protection Overvoltage protection 4 Current limitation Analog driving possible21VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb

M

HITFET Drain Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- ESD OverloadProtection temperature Short circuit Protection Protection Pin 3 Source Page 1 2001-07-20, Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Unit Drain source voltage VDS 42 V Drain source voltage for short circuit protection1) VDS(SC) 42 Continuous input current IIN mA -0.2V VIN 10V no limit VIN < -0.2V or VIN > 10V | IIN | 2 Operating temperature Tj -40 ...+150 °C Storage temperature Tstg -55 ... +150 Power dissipation Ptot 3.8 W TC = 85 °C Unclamped single pulse inductive energy 2) EAS 250 mJ Load dump protection VLoadDump3) = VA + VS VLD 50 V VIN = 0 and 10 V, td = 400 ms, RI = 2 , RL = 6 , VA = 13.5 V Electrostatic discharge voltage (Human Body Model) VESD 2 kV according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - ambient: RthJA K/W @ min. footprint 125 @ 6 cm2 cooling area 4) 72 junction-soldering point: RthJS 17 K/W 1Device switched on into existing short circuit. 2 Not tested, specified by design. 3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for d connection. PCB mounted vertical without blown air. Page 2 2001-07-20, Electrical Characteristics Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage VDS(AZ) 42 - 55 V Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS - 1.5 10 µA VDS = 32 V, VIN = 0 V Input threshold voltage VIN(th) V ID = 0.3 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 °C 0.8 - - On state input current IIN(on) - 10 30 µA On-state resistance RDS(on) m VIN = 5 V, ID = 2.17 A, Tj = 25 °C - 90 120 VIN = 5 V, ID = 2.17 A, Tj = 150 °C - 160 240 On-state resistance RDS(on) VIN = 10 V, ID = 2.17 A, Tj = 25 °C - 70 100 VIN = 10 V, ID = 2.17 A, Tj = 150 °C - 130 200 Nominal load current ID(Nom) 2.17 - - A VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C Current limit (active if VDS>2.5 V)1) ID(lim) 10 15 20 VIN = 10 V, VDS = 12 V, tm = 200 µs 1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. Page 3 2001-07-20, Electrical Characteristics Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Dynamic Characteristics Turn-on time VIN to 90% ID: ton - 40 100 µs RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: toff - 70 100 RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: -dVDS/dton - 0.4 1.5 V/µs RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.6 1.5 RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Thermal hysteresis Tjt - 10 - K Input current protection mode IIN(Prot) 60 120 300 µA Input current protection mode IIN(Prot) - 100 300 Tj = 150 °C Unclamped single pulse inductive energy 2) EAS 250 - - mJ ID = 2.17 A, Tj = 25 °C, Vbb = 12 V

Inverse Diode

Inverse diode forward voltage VSD - 1 - V IF = 10.9 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2 Not tested, specified by design. Page 4 2001-07-20,

Block diagram

Terms Inductive and overvoltage output clamp

RL

V DZ IIN 2D 1 IN ID VDS Vbb

HITFET

3 S

S VIN HITFET

Input circuit (ESD protection) Short circuit behaviour Gate Drive Input

VIN

Source/ IIN Ground

IDS

Tj Page 5 2001-07-20, 1 Maximum allowable power dissipation 2 On-state resistance

Ptot = f(TS) resp. RON = f(Tj); ID=2.17A; VIN=10V Ptot = f(TA) @ RthJA=72 K/W

10 225Wmmax. max. 175 125 typ. 2 50 6cm2 1 25 -75 -50 -25 0 25 50 75 100 °C 150 0 -50 -25 0 25 50 75 100 125 °C 175 TS ;TA Tj 3 On-state resistance 4 Typ. input threshold voltage

RON = f(Tj); ID= 2.17A; VIN=5V VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V

2502mmax. V 200 1.6 175 1.4 typ. 150 1.2 125 1 100 0.8 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 125 °C 175 0 -50 -25 0 25 50 75 100 °C 150 Tj Tj Page 6 2001-07-20 RDS(on) Ptot VGS(th) RDS(on), 5 Typ. transfer characteristics 6 Typ. short circuit current

ID=f(VIN); VDS=12V; TJstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: VIN

16 24AA4Vin=10V 2 12 5V 0 1012345678V10 -50 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics 8 Typ. off-state drain current

ID=f(VDS); TJstart=25°C IDSS = f(Tj) Parameter: VIN

Vin=10V 11 A 7V µA max. 16 6V 9 14 5V 8 12 4V 7 3V32typ. 2101234V60-50 -25 0 25 50 75 100 125 °C 175 VDS Tj Page 7 2001-07-20 ID ID IDSS ID, 9 Typ. overload current 10 Typ. transient thermal impedance

ID(lim) = f(t), Vbb=12 V, no heatsink ZthJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T

25 10 2 K/W D=0.5

A

-40°C 1 0.210 0.1 0.05 15 25°C 0.02 10 0 0.01 +150°C 85°C 10 -1 Single pulse 0 10 -20123ms 5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 101s103ttp 11 Determination of ID(lim)

ID(lim) = f(t); tm = 200µs Parameter: TJstart A

-40°C 15 25°C 85°C 150°C 0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2001-07-20 ID(lim) ID(lim) ZthJA,

Package Ordering Code SOT-223 Q67060-S7202-A2

6.5±0.2 1.6±0.1

A

3±0.1 0.1 max

B

4 +0.2 acc. to DIN 67841230.7 ±0.1 2.3 0.28 ±0.04 4.6 0.25MA0.25MBGPS05560 Page 9 2001-07-20 7 ±0.3 0.5 min 15˚ max 3.5±0.2, Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2001-07-20]
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