Download: Mini PROFET® BSP 452

MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis 4 • Overload protection • Overvoltage protection • Switching inductive load 3 • Clamp of negative output voltage with inductive loads 2 • Undervoltage shutdown 1 • Maximum current internally limited • Electrostatic discharge (ESD) protection • Reverse battery protection1) Package: SOT 223 Type Ordering code BSP 452 Q67000-S271 Application • µC compatible power switch for 12 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechani...
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Content

MiniPROFET

• High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis 4 • Overload protection • Overvoltage protection • Switching inductive load 3 • Clamp of negative output voltage with inductive loads 2 • Undervoltage shutdown 1 • Maximum current internally limited • Electrostatic discharge (ESD) protection • Reverse battery protection1) Package: SOT 223 Type Ordering code

BSP 452 Q67000-S271 Application

• µC compatible power switch for 12 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Blockdiagramm:

+ Vbb 4 Voltage Overvoltage Current Gate source protection limit protection ESD- VLogic Diode Voltage Charge pump Limit for OUT unclamped 1 sensor Level shifter ind. loads Temperature Rectifier sensor

R

3 IN in Load ESD Logic GND MINI-PROFET Signal GND Load GND 1) With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load.

Semiconductor Group Page 1 of 8 20.08.96

, Pin Symbol Function 1 OUT O Output to the load 2 GND - Logic ground 3 IN I Input, activates the power switch in case of logical high signal 4 Vbb + Positive power supply voltage Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage Vbb 40 V Load current self-limited IL IL(SC) A Maximum input voltage2) VIN -5.0...Vbb V Maximum input current IIN ±5 mA Inductive load switch-off energy dissipation, EAS 0.5 J single pulse IL = 0.5A , TA = 150°C (not tested, specified by design) Load dump protection3) VLoadDump=UA+Vs RL= 24Ω V 4Load dump ) 60 V RI=2Ω , td=400ms, IN= low or high, UA=13,5V RL= 80Ω 80 (not tested, specified by design) Electrostatic discharge capability (ESD)5) PIN 3 VESD ±1 kV PIN 1,2,4 ±2 Operating temperature range Tj -40 ...+150 °C Storage temperature range Tstg -55 ...+150 Max. power dissipation (DC)6) TA = 25 °C Ptot 1.8 W Thermal resistance chip - soldering point: RthJS 7 K/W chip - ambient:6) RthJA 70 2) AtV3IN > Vbb, the input current is not allowed to exceed ±5 mA. ) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Semiconductor Group Page 2 20.08.96,

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C RON - 0.16 0.2 Ω Tj = 150°C - - 0.4 Nominal load current (pin 4 to 1)7) IL(ISO) 0.7 - - A ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT ton - 60 100 µs Turn-off time to 10% VOUT toff - 60 150 RL = 24 Ω Slew rate on dV /dton - 2 4 V/µs 10 to 30% VOUT, RL = 24 Ω Slew rate off -dV/dtoff - 2 4 V/µs 70 to 40% VOUT, RL = 24 Ω Input Allowable input voltage range, (pin 3 to 2) VIN -3.0 - Vbb V Input turn-on threshold voltage VIN(T+) - - 3.5 V Tj = -40...+150°C Input turn-off threshold voltage VIN(T-) 1.5 - - V Tj = -40...+150°C Input threshold hysteresis ∆VIN(T) - 0.5 - V Off state input current (pin 3) VIN(off) = 1.2 V IIN(off) 10 - 60 µA Tj = -40...+150°C On state input current (pin 3) VIN(on) = 3.0 V to Vbb IIN(on) 10 - 100 µA Tj = -40...+150°C Input resistance RIN 1.5 2.8 3.5 kΩ 7) IL(ISO) is limited by current limitation, see IL(SC) Semiconductor Group Page 3 20.08.96, Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Operating Parameters Operating voltage8) Tj =-40...+150°C Vbb(on) 5.0 - 34 V Undervoltage shutdown Tj =-40...+150°C Vbb(under) 3.5 - 5 V Undervoltage restart Tj =-40...+25°C Vbb(u rst) - - 6.5 V Tj =+150°C 7.0 Undervoltage restart of charge pumpe Vbb(ucp) - 5.67Vsee diagram page 7 Undervoltage hysteresis ∆Vbb(under) - 0.3 - V ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C Vbb(over) 34 - 42 V Overvoltage restart Tj =-40...+150°C Vbb(o rst) 33 - - V Overvoltage hysteresis Tj =-40...+150°C ∆Vbb(over) - 0.7 - V Standby current (pin 4), Vin = low Tj =-40...+150°C Ibb(off) - 10 25 µA Operating current (pin 2), Vin = 5 V IGND - 1 1.6 mA leakage current (pin 1) Vin = low Tj =-40...+25°C IL(off) - 2 5 µA Tj =150°C 7 Protection Functions Current limit (pin 4 to 1) Tj = 25°C IL(SC) 0.7 1.52AVbb = 20V Tj = -40...+150°C 0.7 - 2.4 Overvoltage protection Ibb=4mA Tj =-40...+150°C Vbb(AZ) 41 - - V Output clamp (ind. load switch off) VON(CL) 41 47 - V at VOUT=Vbb-VON(CL), Ibb = 4mA Thermal overload trip temperature Tjt 150 - - °C Thermal hysteresis ∆Tjt - 10 - K Inductive load switch-off energy dissipation9) EAS - - 0.5 J Tj Start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) Reverse battery (pin 4 to 2) 10) -Vbb - - 30 V (not tested, specified by design) 8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. 2 V EAS= 1/2 * L * I L * ( ON(CL) VON(CL) - V ) bb 10) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Semiconductor Group Page 4 20.08.96, Max. allowable power dissipation Current limit characteristic Ptot = f (TA,TSP) IL(SC) = f (Von); (Von see testcircuit) Ptot [W] IL(SC) [A] 18 2 16 1.8 14 1.6 1.4 12 150°C TSP 1.2 25°C 1 -40°C 0.8 0.6 0.4

TA

2 0.200025 50 75 100 125 1500246810 12 14 TA, TSP[°C] Von [V] On state resistance (Vbb-pin to OUT-pin) Typ. input current RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A IIN = f (VIN); Vbb = 13,5 V RON [Ω] IIN [µA] 0.4 50 -40°C 0.35 40 +25°C 0.3 98% 0.25 30 +150°C 0.2 25 0.15 0.1 0.0500-50 -25 0 25 50 75 100 125 1500246810 12 14 Tj [°C] VIN [V]

Semiconductor Group Page 5 20.08.96

, Typ. operating current Typ. overload current IGND = f (Tj); Vbb = 13,5 V; VIN = high IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IGND [mA] IL(lim) [A] 0.8 1.4 0.7 1.2 0.6 0.5 0.8 +150°C +25°C -40°C 0.4 0.6 0.3 0.4 0.2 0.1 0.200-50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200 250 300 350 400 Tj [°C] t [ms] Typ. standby current Short circuit current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low IL(SC) = f (Tj); Vbb = 13,5 V Ibb(off) [µA] IL(SC) [A] 8 1.4 7 1.2 0.8 0.6 0.4 1 0.200-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 Tj [°C] Tj [°C]

Semiconductor Group Page 6 20.08.96

, Typ. input turn on voltage threshold Figure 6: Undervoltage restart of charge pumpe VIN(T+) = f (Tj); VIN(T+) [V] VON [V] 13V 2.5 1.5 V bb(over)

V

bb(o rs t) 1 V bb(u rs t) 0.5 Vbb(u cp) V bb(under) -50 -25 0 25 50 75 100 125 150 V [V] Tj [°C] bb charge pump starts at Vbb(ucp) about7Vtyp. Typ. on-state resistance (Vbb-Pin to Out-Pin) Test circuit RON = f (Vbb,IL); IL=0.5A, Tj = 25°C RON [mΩ] 0 5 10 15 20 25 Vbb [V]

Semiconductor Group Page 7 20.08.96

,

Package:

all dimensions in mm. SOT 223/4: Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1) of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2) with the express written approval of the Semiconductor Group of Siemens AG. 1) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Semiconductor Group Page 8 20.08.96

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