Download: P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4 –0.12 VP0610L –60 10 @ VGS = –10 V –1 to –3.5 –0.18 VP0610T –60 10 @ VGS = –10 V –1 to –3.5 –0.12 BS250 –60 10 @ VGS = –10 V –1 to –3.5 –0.18 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Low On-Resistance: 8 Low Offset (Error) Voltage Hammers, Displays, Memories, Low Threshold: –1.9 V Low-Voltage Operation Transistors, etc. Fast Switching Speed: 16 ns High-Speed Switching Battery...
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P-Channel 60-V (D-S) MOSFET

Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4 –0.12 VP0610L –60 10 @ VGS = –10 V –1 to –3.5 –0.18 VP0610T –60 10 @ VGS = –10 V –1 to –3.5 –0.12 BS250 –60 10 @ VGS = –10 V –1 to –3.5 –0.18 High-Side Switching Ease in Driving Switches Drivers: Relays, Solenoids, Lamps, Low On-Resistance: 8 Low Offset (Error) Voltage Hammers, Displays, Memories, Low Threshold: –1.9 V Low-Voltage Operation Transistors, etc. Fast Switching Speed: 16 ns High-Speed Switching Battery Operated Systems Low Input Capacitance: 15 pF Easily Driven Without Buffer Power Supply, Converter Circuits Motor Control TO-226AA Device Marking TO-92-18RM (TO-92) Front View (TO-18 Lead Form) TO-236 TP0610L Device Marking (SOT-23) S11“S” TP D Front View 0610L xxll BS250G1Marking Code: G2G2“S” BS3DTP0610T: TOwll 250 VP0610T: VOwll VP0610L xxllS2D3S3w= Week Code “S” VP “S” = Siliconix Logo lL = Lot Traceability 0610L xxll = Date Code Top View xxll Top ViewTop View TP0610L BS250 TP0610T VP0610L “S” = Siliconix Logo VP0610T xxll = Date Code Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Unit Drain-Source Voltage VDS –60 –60 –60 –60 –60

V

Gate-Source Voltage VGS 20 20 20 20 20 Continuous Drain Current TA= 25C –0.18 –0.12 –0.18 –0.12 –0.18I (TJ = 150C) TA= 100 C

D

–0.11 –0.07 –0.11 –0.07 A Pulsed Drain Currenta IDM –0.8 –0.4 –0.8 –0.4 TA= 25C 0.8 0.36 0.8 0.36 0.83 Power DissipationPTD

W

A= 100C 0.32 0.14 0.32 0.14 Thermal Resistance, Junction-to-Ambient RthJA 156 350 156 350 150 C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. S-04623—Rev. G, 03-Sep-01 11-1,

Limits

TP0610L/T VP0610L/T BS250

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static

Drain-Source VGS = 0 V, ID = –10 A –60 –60 Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –100 A –60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –250 A –1 –2.4 –1 –3.5 –1 –3.5 VDS = 0 V, VGS = 10 V 200 200 Gate-Body Leakage IGSS VDS = 0 V, VGS = 10 V, TJ = 125C 500 nA VDS = 0 V, VGS = 5 V 100 VDS = –48 V, VGS = 0 V –1 –1 Zero Gate Voltage V = –48 V, V = 0 V, T = 125C –200 –200 Drain Current IDSS DS GSJAVDS = –25 V, VGS = 0 V –0.5 VDS = –10 V, VGS = –4.5 V –50 On-State Drain Currentb ID(on) mA VDS = –10 V, VGS = –10 V –600 –600 VGS = –4.5 V, ID = –25 mA 25 Drain-Source VGS = –10 V, ID = –0.5 A 10 10 On-Resistanceb rDS(on) VGS = –10 V, ID = –0.5 A, TJ = 125C 20 20 VGS = –10 V, ID = –0.2 A 10 10 14 Forward Transconductanceb gfs VDS = –10 V, ID = –0.5 A 20 80 mS Diode Forward Voltage VSD IS = –0.5 A, VGS = 0 V –1.1 –1.4 V

Dynamic

Input Capacitance Ciss 23 60 60 Output Capacitance C VDS = –25 V, VGS = 0 Voss f = 1 MHz 10 25 25 pF Reverse Transfer Capacitance Crss555

Switchingc

Turn-On Time tON VDD = –25 V, RL = 133 20 I –0.18 A, V = –10 V ns Turn-Off TimetDGENOFF R 35G = 25 Notes a. For DESIGN AID ONLY, not subject to production testing. VPDS06 b. Pulse test: PW 300 s duty cycle 2%. c. Switching time is essentially independent of operating temperature. 11-2 S-04623—Rev. G, 03-Sep-01, Output Characteristics Transfer Characteristics 1.0 1200 VGS = 10VT= –55C7VJ0.88V25C 0.66V125C 0.45V0.24V0.000123450246810 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 40 VGS = 0 V 16 VGS = 4.5 V 32 Ciss 12 24 VGS = 5V816 Coss VGS = 10V48Crss000200 400 600 800 10000510 15 20 25 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 15 1.8 ID = 500 mA 12 1.5 VDS = 30 V VGS = 10 V @ 500 mA VDS = 48 V 1.2 VGS = 4.5 V @ 25 mA0.9 0.6 0.3 0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (C) S-04623—Rev. G, 03-Sep-01 11-3 V GS – Gate-to-Source Voltage (V) rDS(on) – On-Resistance ( ) I D – Drain Current (A) rDS(on) – On-Resistance ( ) (Normalized) C – Capacitance (pF) I D – Drain Current (mA), Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 1000 10 VGS = 0V8ID = 500 mA TJ = 125C 10 TJ = 25 C ID = 200 mA TJ = –55C100.00 0.3 0.6 0.9 1.2 1.50246810 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 0.5 3 0.4 ID = 250 A 2.5 0.3 0.2 0.1 1.5 –0.0 TA = 25C –0.1 0.5 –0.2 –0.3 0 –50 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ – Junction Temperature (C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t 0.02 2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 350C/W 3. TJM – TA = P Z (t)Single Pulse DM thJA 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) 11-4 S-04623—Rev. G, 03-Sep-01 Normalized Effective Transient VGS(th)Variance (V) I S – Source Current (A) Thermal Impedance Power (W) rDS(on) – On-Resistance ( )]
15

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