Download: GENERAL DESCRIPTION QUICK REFERENCE DATA OUTLINE - SOD84 SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT diodes in an axial, hermetically sealed, glass envelope. These BR211-100 to 280 devices feature controlled breakover V(BO) Breakover voltage 100 280 V voltage and high holding current IH Holding current 150 - mA together with high peak current ITSM Non-repetitive peak current - 40 A handling capability. Typical applications include transient overvoltage protection in telecommunications equipment. OUTLINE - SOD84 SYMBOL XXX denotes voltage grade LIMITING VALUES Limiting values in accorda...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT diodes in an axial, hermetically sealed, glass envelope. These BR211-100 to 280 devices feature controlled breakover V(BO) Breakover voltage 100 280 V voltage and high holding current IH Holding current 150 - mA together with high peak current ITSM Non-repetitive peak current - 40 A handling capability. Typical applications include transient overvoltage protection in telecommunications equipment.

OUTLINE - SOD84 SYMBOL

XXX denotes voltage grade

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VD Continuous voltage - 75% of V V(BO)typ ITSM1 Non repetitive peak current 10/320 µs impulse equivalent to - 40 A 10/700 µs, 1.6 kV voltage impulse (CCITT K17) ITSM2 Non repetitive on-state current half sine wave; t = 10 ms; - 15 A Tj = 70 ˚C prior to surge I2t I2t for fusing t 2p = 10 ms - 1.1AsdIT/dt Rate of rise of on-state current tp = 10 µs - 50 A/µs after V(BO) turn-on Ptot Continuous dissipation Ta = 25˚C - 1.2 W PTM Peak dissipation tp = 1 ms; Ta = 25˚C - 50 W Tstg Storage temperature -65 150 ˚C Ta Operating ambient temperature off-state - 70 ˚C Tvj Overload junction temperature on-state - 150 ˚C October 1994 1 Rev 1.100 BR211-XXX,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-e Thermal resistance junction to - 22 - K/W envelope Rth j-a Thermal resistance junction to mounted as fig:12 - 105 K/W ambient Zth j-a Thermal impedance junction to tp = 1 ms - 2.62 - K/W ambient Rth e-tp Thermal resistance envelope to lead length = 5 mm - 15 - K/W tie point lead length = 10 mm - 30 - K/W Rth e-a Thermal resistance envelope to lead length = 5 mm - 440 - K/W ambient lead length = 10 mm - 350 - K/W Rth tp-a Thermal resistance tie point to mounted as fig:12 - 70 - K/W ambient mounted with 1 cm2 copper - 55 - K/W laminate per lead. mounted with 2.25 cm2 copper - 45 - K/W laminate per lead

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V 1TM On-state voltage ITM = 2 A - - 2.5 V V(BR) Avalanche voltage (min) I(BR) = 10mA V(BO) Breakover voltage (max) I ≤ IS, tp = 100 µs BR211-100 88 100 112 V BR211-120 105 120 135 V BR211-140 123 140 157 V BR211-160 140 160 180 V BR211-180 158 180 202 V BR211-200 176 200 224 V BR211-220 193 220 247 V BR211-240 211 240 269 V BR211-260 228 260 292 V BR211-280 246 280 314 V S(br) Temperature coefficient of V(BR) - +0.1 - %/K I 2H Holding current Tj = 25˚C 150 - - mA Tj = 70˚C 100 - - mA I 3S Switching current tp = 100 µs 10 200 1000 mA I 4D Off-state current VD = 85% V(BR)min, Tj = 70˚C - - 10 µA 1 Measured under pulsed conditions to avoid excessive dissipation 2 The minimum current at which the diode will remain in the on-state 3 The avalanche current required to switch the diode to the on-state 4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative humidity < 65%. October 1994 2 Rev 1.100,

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Linear rate of rise of off-state V(DM) = 85% V(BR)min; Tj = 70 ˚C - - 2000 V/µs voltage that will not trigger any device Cj Off-state capacitance VD = 0 V; f = 1 kHz to 1 MHz - - 100 pF current VT ITSM / A BR21120 IT I ITSM2 15 time

IS

IH V(BR) V(BO) ID I(BR) 10 voltage

VD

Symbol 01 10 100 1000 10000 Symmetric BOD Number of impulses Fig.1. Definition of breakover diode characteristics. Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; Tj = 70˚C prior to surge. current V(BR)(Tj) V(BR)(25 C) 1.06

ITSM

100% 1.04 90% 1.02 1.00 50% 0.98 0.96 30% 0.94 0.92 0 time 0.90 -40 -20 0 20 40 60 80 100 10us 700us Tj / C Fig.2. Test waveform for high voltage impulse (ITSM1) Fig.4. Normalised avalanche breakdown voltage V(BR) according to CCITT vol IX-Rec K17. and V(BO) as a function of temperature. October 1994 3 Rev 1.100, IT / A 20 10 IH / A Tj = 25 C Tj = 150 C 15 1 min 10 typ max 0.1 0.01 0.001 0 -50 0 50 100 1501234VT / V Tj / C Fig.5. On-state current as a function of on-state Fig.8. Minimum holding current as a function of voltage; tp = 200 µs to avoid excessive dissipation. temperature. 100 ID / uA Cj / pF100 typ BR211-100 BR211-120 10 max BR211-280 0.1 1 -40 -20 0 20 40 60 80 100 1 10 100 1000 Tj / C VD / V Fig.6. Maximum off-state current as a function of Fig.9. Typical junction capacitance as a function of temperature. off-state voltage, f = 1 MHz; Tj = 25˚C. 10 IS / A Zth / (K/W) BR2111000 1 max 100 typ 0.1 10 0.01 min 1 PD tp D = tp

T

T t 0.001 0.1 -50 0 50 100 150 10us 1ms 0.1s 10s 1000s Tj / C tp / s Fig.7. Switching current as a function of junction Fig.10. Transient thermal impedance. Zth j-a = f(tp). temperature. October 1994 4 Rev 1.100, junction Rth j-e envelope 50 Rth e-tp tie-point Rth e-a72Rth tp-a ambient Fig.11. Components of thermal resistance, Fig.12. Mounting on pcb used for Rth measurement. Rthe − a .(Rthe − tp + Rthtp − a) Rth j − a = Rth j − e + (Rthe − a + Rthe − tp + Rthtp − a) October 1994 5 Rev 1.100, MECHANICAL DATA Dimensions in mm 0.81 3.15 28 4.3 28 min max min Fig.13. SOD84. October 1994 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 7 Rev 1.100]
15

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