Download: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b

DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended • Emitter ballasting resistors for an optimum temperature for class-A, B or C operation. The transistor is profile encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. • Gold metallization ensures excellent reliability. APPLICATIONS • Transmitting applications in the UHF range with a handbook, halfpage 4 nominal supply voltage up to ...
Author: Cooper Shared: 8/19/19
Downloads: 567 Views: 1167

Content

DISCRETE SEMICONDUCTORS

DATA SHEET BLX94C UHF power transistor

Product specification 1996 Feb 06 File under Discrete Semiconductors, SC08b, FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended • Emitter ballasting resistors for an optimum temperature for class-A, B or C operation. The transistor is profile encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. • Gold metallization ensures excellent reliability.

APPLICATIONS

• Transmitting applications in the UHF range with a handbook, halfpage 4 nominal supply voltage up to 28 V. c13PINNING - SOT122A b PIN SYMBOL DESCRIPTIONe1ccollector 2 MAM2292eemitter3bbase Fig.1 Simplified outline and symbol. 4 e emitter QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF f VCE PL Gp ηC OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 470 28 25 >6.5 >55

WARNING

Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Feb 06 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter voltage (peak value) VBE = 0 − 65 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 2.5 A IC(AV) average collector current − 2.5 A ICM peak collector current f > 1 MHz − 6 A Ptot total power dissipation ≤ Tmb = 25 °C − 60 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 4 K/W mounting base (DC dissipation) Rth j-mb thermal resistance from junction to Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 2.7 K/W mounting base (RF dissipation) Rth mb-h thermal resistance from mounting base Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 0.6 K/W to heatsink MBH096 MBH097 handbook, halfpage 60handbook, halfpage Ptot (W) IC 50 (A) (3) (2) (1) 40 1 (2) (1) 10−1 10 1 10 VCE (V) 102050 Th ( oC) 100 (1) Continuous DC operation. (1) Tmb = 25 °C. (2) Continuous RF operation. (2) Th = 70 °C. (3) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power derating curves. 1996 Feb 06 3,

CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CES collector-emitter breakdown voltage VBE = 0; IC = 25 mA 65 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 mA 4 − − V VCEsat collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; note 1 − 1.5 − V ICES collector cut-off current VBE = 0; VCE = 30 V − − 10 mA ESBR second breakdown energy open base; L = 25 mH; f = 50 Hz 3 − − mJ RBE = 10 Ω; L = 25 mH; f = 50 Hz 3 − − mJ hFE DC current gain VCE = 5 V; IC = 1.5 A; note 1 15 50 − fT transition frequency VCB = 28 V; IE = −1.5 A; − 1.1 − fT f = 500 MHz; note 1 VCB = 28 V; IE = −4 A; − 0.75 − fT f = 500 MHz; note 1 Cc collector capacitance VCB = 28 V; IE = ie = 0; f = 1 MHz − 33 − pF Cre feedback capacitance VCE = 28 V; IC = 20 mA; f = 1 MHz; − 18 − pF Cc-s collector-stud capacitance − 1.2 − pF Note 1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02. MBH099 MBH098 100 75 handbook, halfpage handbook, halfpage Cc VCE = 25 V (pF) hFE5V0002IC (A) 4 0 20 VCB (V) 40 Measured under pulsed conditions; tp ≤ 200 µs; δ ≤ 0.02;Tj = 25 °C. (1) VCE = 25 V. (2) VCE = 5 V. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.4 DC current gain as a function of collector Fig.5 Collector capacitance as a function of current; typical values. collector-base voltage; typical values. 1996 Feb 06 4, MBH106 1,5 handbook, full pagewidth fT (GHz) 0.5 0 −1 −2 −3 IE (A) −4 VCB = 28 V; Tj = 25 °. Fig.6 Transmission frequency as a function of emitter current; typical values. 1996 Feb 06 5, APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter, class-B test circuit. fVPPGIηMODE OF OPERATION CELSpCC(MHz) (V) (W) (W) (dB) (A) (%) CW, class-B 470 28 25 <5.6 >6.5 <1.62 >55 typ. 4.7 typ. 7.25 typ. 1.54 typ. 58 MBH101 MBH100 10 100 handbook, halfpage 40handbook, halfpage

PL

(W) Gp Gp η (dB) (%) 30η550 20000020 PL (W) 400246PS (W) VCE = 28 V. VCE = 28 V. ICQ = 200 mA. Th = 25 °C. f = 470 MHz. f = 470 MHz. Fig.7 Power gain and efficiency as functions of Fig.8 Load power as a function of source power; load power; typical values. typical values. 1996 Feb 06 6, handbook, full pagewidth input C2 L1 L4 C7 output

DUT

ZS = 50 Ω C1 R1 L3 C8 ZL = 50 Ω C3 C4 L2 C5 R2 C6 MBH107 L5 +VCC Fig.9 Class-B test circuit at f = 470 MHz. List of components (see Figs 9 and 10)

CATALOGUE

COMPONENT DESCRIPTION VALUE DIMENSIONS No. C1, C2, C8 film dielectric trimmer capacitor 2 to 9 pF 2222 809 09002 C3, C4 chip capacitor 15 pF C5 feed through capacitor 100 pF C6 polyester capacitor 33 nF C6 chip capacitor 22 nF, 63 V C7 film dielectric trimmer capacitor 2 to 18 pF 2222 809 09003 L1 stripline; note 1 length 41.1 mm width 5 mm L2 13 turns enamelled 0.5 mm copper int. diameter 4 mm wire close wound L3 2 turns 1 mm copper wire int. diameter 4 mm winding pitch 1.5 mm leads2x5mm L4 stripline; note 1 length 52.7 mm width 5 mm L5 Ferroxcube choke coil 750 Ω; ± 20% 4312 020 36640 R1 carbon resistor1ΩR2 carbon resistor 10 Ω Note 1. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr = 2.74); thickness 1.45 mm. 1996 Feb 06 7, handbook, full pagewidth 146 41.1 52.7 rivet (4x) L2 input output 50 Ω C1 R1 C3 50 Ω C7 L1 L4 C2 C4 C6 C8 L3 C5 R2 L5 VCC MBH108 Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.

Fig.10 Component layout and printed-circuit board for 470 MHz class-B test circuit.

1996 Feb 06 8, MBH102 MBH103 30 3 handbook, halfpage handbook, halfpage ri, xi (Ω) xi PL 2T = 50 oC (W) h 70oC1ri 20 90oC−1 10 −2 1 10 VSWR 102 100 300 f (MHz) 500 VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. VCE = 28 V; f = 470 MHz; Rth mb-h = 0.6 K/W.

Fig.12 Input impedance as a function of frequency Fig.11 Load power as a function of VSWR. (series components); typical values.

MBH104 MBH105 8 24 handbook, halfpage handboGok, halfpagep (dB) RL, XL (Ω) X 16L 6 12

RL

4 0 100 300 f (MHz) 500 100 300 f (MHz) 500 VCE = 28 V; PL = 25 W; VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. Th = 25 °C; Class-B operation.

Fig.13 Load impedance as a function of frequency Fig.14 Power gain as a function of frequency;

(series components); typical values. typical values. 1996 Feb 06 9,

PACKAGE OUTLINE

5.9 (4x) 5.5 handbook, full pagewidth 1.52450.14 8.8 (4x) min metal 8-32 UNC BeO13ceramic 27.6 6.35 24.9 3.0 3.3 1.6 8.5 max 7.6 max 3.25 2.80 27.6 12.0 24.9 11.0 5.6 maxMSA246 Dimensions in mm. Torque on nut: min. 0.75 Nm; max. 0.85 Nm. Mounting hole to have no burrs at either end. De-burring must leave surface flat; do not chamfer or countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer.

Fig.15 SOT122A.

1996 Feb 06 10,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 06 11]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT171A • Internal input matching for wideband operation and high PIN DESCRIPTION power gain 1 emitter • P
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Internal input and output matching for easy matching, Two NPN silicon planar epitaxial transistors in push-pull high gain and ef
DATA SHEET BLV904 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Preliminary specification 1996 Feb 08 File under Discrete Semiconductors, SC08b FEATURES APPLICATIONS • Emitter ballasting resistors for optimum • Common emitter class-AB operation in base stations in temperature profile the 820 to 960 M
DATA SHEET BLV862 UHF linear push-pull power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification 1996 Jun 11 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double stage internal input and output matching PIN SYMBOL DESCRIPTION networks for an optimum wideband capabilit
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideba
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input handbook, halfpage • Excellent return loss properties 2 common •
DISCRETE SEMICONDUCTORS DATA SHEET BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 1999 Mar 30
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 1999 Mar 30 FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2, 3 com
DISCRETE SEMICONDUCTORS DATA SHEET BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • G
DISCRETE SEMICONDUCTORS DATA SHEET BGY43 VHF power amplifier module Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY43 VHF power amplifier module Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT132B • Broadband VHF amplifier PIN DESCRIPTION • 13 W output power 1 RF input handbook, halfpage • Direct o
DISCRETE SEMICONDUCTORS DATA SHEET BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules Product specification 1996 Jun 06 Supersedes data of May 1991
DISCRETE SEMICONDUCTORS DATA SHEET BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09 BGY32; BGY33; VHF power amplifier modules BGY35; BGY36 FEATURESS PINNING - SOT132B • Broadband VHF amplifie
DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification 1996 May 13 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification 1996 May 13 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT321B • 6 V nominal supply voltage PIN DESCRIPTION • 2 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 V
DATA SHEET BGY209 UHF amplifier module
DISCRETE SEMICONDUCTORS DATA SHEET BGY209 UHF amplifier module Objective specification 1996 May 29 File under Discrete Semiconductors, SC09 FEATURES PINNING • 4.8 V nominal supply voltage PIN DESCRIPTION • 2.8 W output power 1 RF input • Easy output power control by DC voltage. 2 VC 3 VS APPLICATION
BTA/BTB24
BTA/BTB24, BTA25, BTA26 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: A2 Symbol Value Unit A2 A2 IT(RMS) 25AGA1 VDRM/VRRM 600 and 800 V A1 A1 A2 A2IGGGT (Q1) 35 to 50 mA TO-220AB A2 TO-220AB DESCRIPTION Insulated (BTB24)(BTA24) Available either in through-hole of surface and T25 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA225- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA216X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA216- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA212X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA212- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA208X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA208- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BTA151- 500R 650R 800R switching and phase control VDRM, Repetitive peak off-state 500 650 800 V applications. VRRM vol
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BTA140- 500 600 800 bidirectional transient and blocking VDRM Repetitive peak off-state 500 600 800 V voltage capability and hi
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT300- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT258- 500R 600R 800R switching and phase control VDRM, Repetitive peak off-state 500 600 800 V applications. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. UNIT thyristor in a plastic envelope, suitable for surface mounting, intended for use VDRM, Repetitive peak off-state voltages 400 V in general purpose switching and VRRM phase control applications. This
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO92 variant PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT169BDEGswitching and phase control VDRM, Repetitive peak 200 400 500 600 V applications. These devices are VRRM
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT168 BW DW EW GW intended for use in Residual Current VDRM, Repetitive peak 200 4
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in Residual Current BT168BDEGDevices/ Ground Fault Interrupters VDRM, Repetitive peak 200 400 5
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151X- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and