Download: DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a

DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT171A • Internal input matching for wideband operation and high PIN DESCRIPTION power gain 1 emitter • Polysilicon emitter ballasting resistors for an optimum 2 emitter temperature profile 3 base • Gold metallization ensures excellent reliability. 4 collector 5 emitter APPLICATION 6 emitter • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequen...
Author: Cooper Shared: 8/19/19
Downloads: 97 Views: 216

Content

DISCRETE SEMICONDUCTORS

DATA SHEET BLW898 UHF linear power transistor

Product specification 1996 Jul 16 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a, FEATURES PINNING SOT171A • Internal input matching for wideband operation and high PIN DESCRIPTION power gain 1 emitter • Polysilicon emitter ballasting resistors for an optimum 2 emitter temperature profile 3 base • Gold metallization ensures excellent reliability. 4 collector 5 emitter

APPLICATION

6 emitter • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. handbook, halfpage DESCRIPTION c NPN silicon planar transistor in a SOT171A 6-lead12rectangular flange package, with a ceramic cap. The34btransistor delivers a Po sync = 3 W in class-A operation at 5 860 MHz and a supply voltage of 25 V. 6 e Top view MAM141 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF f VCE ICQ Po sync Gp OPERATION (MHz) (V) (A) (W) (dB) CW class-A 860 25 1.1 ≥3(1) ≥9(1) Note 1. Three-tone test signal (−8, −16, and −10 dB); dim = −63 dB.

WARNING

Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Jul 16 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 3.7 A IC(AV) average collector current − 3.7 A Ptot total power dissipation up to Tmb = 70 °C − 44 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to Ptot = 44 W; Tmb = 70 °C 3 K/W mounting-base Rth mb-h thermal resistance from 0.3 K/W mounting-base to heatsink MGD531 handbook, halfpage Ptot (W) (2) (1) 0 40 80 120 160 Tmb °C (1) Continuous operation (2) Short-time operation during mismatch. Fig.2 Power derating curve. 1996 Jul 16 3,

CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 15 mA; IE = 0 60 − − V V(BR)CEO collector-emitter breakdown voltage IC = 30 mA; IB = 0 28 − − V V(BR)EBO emitter-base breakdown voltage IE = 0.6 mA; IC = 0 2.5 − − V ICBO collector-base leakage current VBE = 0; VCB = 28 V − − 1.5 mA ICEO collector-emitter leakage current VCE = 20 V − − 3 mA hFE DC current gain VCE = 25 V; IC = 1.1 A 30 − 140 Cc collector capacitance VCB = 25 V; IE = ie = 0; − 18 − pF f = 1 MHz Cre feedback capacitance VCB = 25 V; IC = 0; f = 1 MHz − 11 − pF MGD532 MGD533 160 60 handbook, halfpage handbook, halfpage h CFE c (pF) 000123010 20 30 40 IC (A) VCB (V) VCE = 25 V; tp = 500 µs; δ = <1 %. IE = ie = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector Fig.4 Collector capacitance as a function of current; typical values. collector-base voltage; typical values. 1996 Jul 16 4, APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter class-A test circuit. MODE OF f VCE ICQ Po sync Gp dim OPERATION (MHz) (V) (A) (W) (dB) (dB) CW class-A 860 25 1.1 ≥3(1) ≥9(1) <−63(1) CW class-A 860 25 1.1 ≥3(2) ≥9(2) <−60(2) Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the conditions: VCE = 25 V; ICQ = 1.1 A; Th = 25 °C; f = 860 MHz; Po sync = 3 W. MGD534 MGD535 30 12 handbook, halfpage handbook, halfpage (1) Po sync Gp (W) (dB) (2) (1) (2) 20 8 1040001234010 20 30 Pi sync (W) Po sync (W) VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 25 °C. (1) Th = 25 °C. (2) Th = 70 °C. (2) Th = 70 °C. Fig.5 Output power as a function of input power; Fig.6 Power gain as a function of output power; typical values. typical values. 1996 Jul 16 5, MGD536 MGD537 −10 -40 handbook, halfpage handbook, halfpage dim dim (dB) (dB) −30 -50 (1) (2) −50 -60 (1) (2) −70 -70 0 10 20 30 0 0.4 0.8 1.2 1.6 Po sync (W) IC (A) VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; Po sync = 3 W; VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). (3-tone; −8/−16/−10 dB). (1) Th = 25 °C. (1) Th = 70 °C. (2) Th = 70 °C. (2) Th = 25 °C.

Fig.7 Intermodulation distortion as a function of Fig.8 Intermodulation distortion as a function of

output power; typical values. collector current; typical values. L12 handbook, full pagewid+th R2 VBB R1 +V C4 C5

CC

C9C10 C11 C12 L6 L11 C6 C7 input C1L1L2L3 L4L5 DUT L9L10 C13 output 50 Ω 50 Ω L7 L8C2C3 C8 MGD538

Fig.9 Class-A test circuit at 860 MHz.

1996 Jul 16 6, handbook, full pagewidth 160 77 77 +VBB +VCC R2 C10 C12L12 C5 C4 L11 R1 C11 C9 L6 C1 L1 L2 & L3 L9 C7 L10 C13 C2 C6 C8 C3 L4 & L5 L7 & L8 MGD539 Dimensions in mm. Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit. 1996 Jul 16 7, List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 multilayer ceramic chip capacitor; 8.2 pF note 1 C2, C8 Tekelec Giga trim 37271 0.6 to 4.5 pF C3 multilayer ceramic chip capacitor; 15 pF note 1 C4, C12 multilayer ceramic chip capacitor 10 nF; 63 V 2222 592 16627 C5 solid aluminium capacitor 10 µF; 63 V 2222 030 38109 C6 multilayer ceramic chip capacitor; 10 pF note 2 C7 multilayer ceramic chip capacitor; 2.4 pF note 2 C9 multilayer ceramic chip capacitor; 500 pF note 2 C10 solid aluminium capacitor 47 µF; 63 V 2222 031 38479 C11 multilayer ceramic chip capacitor; 330 pF note 2 C13 multilayer ceramic chip capacitor; 5.1 pF note 1 L1 stripline; note 3 50 Ω 50 × 2.3 mm L2 stripline; note 3 50 Ω 10 × 2.3 mm L3 stripline; note 3 40Ω2× 3.25 mm L4, L5 stripline; note 3 40Ω4× 3.25 mm L6 RF choke 220 nH L7 stripline; note 3 40Ω9× 3.25 mm L8 stripline; note 3 40 Ω 3.5 × 3.25 mm L9 stripline; note 3 50Ω9× 2.3 mm L10 stripline; note 3 50 Ω 48.5 × 2.3 mm L11 stripline; note 3 40 Ω 41.5 × 3.25 mm L12 grade 4S2 ferroxcube wideband 4330 030 36301 RF choke R1 metal film resistor 50 Ω; 0.6 W 2322 156 14999 R2 metal film resistor 10 Ω; 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 0.79 mm. 1996 Jul 16 8, Table 1 Common emitter scattering parameter, ICQ = 1.1 A; VCE = 25 V. S11 S21 S12 S22 f GUM (MHZ) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB) (RAT) (DEG) (RAT) (DEG) (RAT) (DEG) (ANG) (DEG) 470 0.962 176.1 1.002 68.3 0.017 32.6 0.802 −178.2 15.7 495 0.961 175.9 0.961 66.9 0.017 32.8 0.803 −178.2 15.2 520 0.959 175.7 0.923 65.7 0.017 33.6 0.804 −178.2 14.7 545 0.958 175.5 0.891 64.4 0.018 34.9 0.803 −178.3 14.3 570 0.957 175.3 0.861 63.2 0.018 35.8 0.804 −178.2 14.0 595 0.955 175.0 0.835 62.0 0.018 36.1 0.805 −178.2 13.5 620 0.953 174.8 0.815 61.0 0.019 36.8 0.804 −178.2 13.0 645 0.951 174.5 0.795 59.7 0.019 37.3 0.805 −178.1 12.7 670 0.950 174.2 0.775 58.6 0.019 37.4 0.807 −178.0 12.5 695 0.947 173.9 0.757 57.7 0.020 37.8 0.806 −178.0 12.0 720 0.943 173.7 0.744 56.6 0.021 38.5 0.805 −178.1 11.5 745 0.942 173.4 0.732 55.4 0.021 38.6 0.807 −177.9 11.3 770 0.941 173.1 0.724 54.4 0.021 39.8 0.808 −177.8 11.1 795 0.938 172.8 0.716 53.3 0.021 40.1 0.807 −177.8 10.8 820 0.935 172.5 0.707 51.8 0.022 39.1 0.808 −177.8 10.6 845 0.933 172.1 0.701 50.9 0.021 39.3 0.810 −177.6 10.4 860 0.932 171.9 0.700 50.2 0.022 39.4 0.809 −177.5 10.3 1996 Jul 16 9, PACKAGE OUTLINE 11.5 handbook, full pagewidth 10.5 5.85 2.25 min 1 (2x) 1 2 3.25 25.2 9.3 9.15 32.85 4 max 18.42 max562.25 1.85 (2x) 3.45 (2x) 3.15 2.8 4.50 4.05 7.0 max 0.14 6 max MBC828 - 1 Dimensions in mm. Fig.11 SOT171A. 1996 Jul 16 10,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 16 11,

Philips Semiconductors – a worldwide company

Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +31 40 27 83749, Fax. +31 40 27 88399 Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Norway: Box 1, Manglerud 0612, OSLO, Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, Tel. +47 22 74 8000, Fax. +47 22 74 8341 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Philippines: Philips Semiconductors Philippines Inc., Belgium: see The Netherlands 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Brazil: see South America Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, Tel. +48 22 612 2831, Fax. +48 22 612 2327 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Portugal: see Spain Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Romania: see Italy Tel. +1 800 234 7381, Fax. +1 708 296 8556 Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Tel. +7 095 926 5361, Fax. +7 095 564 8323 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +852 2319 7888, Fax. +852 2319 7700 Tel. +65 350 2538, Fax. +65 251 6500 Colombia: see South America Slovakia: see Austria Czech Republic: see Austria Slovenia: see Italy Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, Tel. +45 32 88 2636, Fax. +45 31 57 1949 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +27 11 470 5911, Fax. +27 11 470 5494 Tel. +358 615 800, Fax. +358 615 80920 South America: Rua do Rocio 220, 5th floor, Suite 51, France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Tel. +55 11 821 2333, Fax. +55 11 829 1849 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Spain: Balmes 22, 08007 BARCELONA, Tel. +49 40 23 52 60, Fax. +49 40 23 536 300 Tel. +34 3 301 6312, Fax. +34 3 301 4107 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +30 1 4894 339/911, Fax. +30 1 4814 240 Tel. +46 8 632 2000, Fax. +46 8 632 2745 Hungary: see Austria Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, Indonesia: see Singapore TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Ireland: Newstead, Clonskeagh, DUBLIN 14, Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., Tel. +353 1 7640 000, Fax. +353 1 7640 200 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Tel. +972 3 645 0444, Fax. +972 3 648 1007 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, Tel. +90 212 279 2770, Fax. +90 212 282 6707 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, 252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991 Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 Tel. +82 2 709 1412, Fax. +82 2 709 1415 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Tel. +60 3 750 5214, Fax. +60 3 757 4880 Uruguay: see South America Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Vietnam: see Singapore Tel. +1 800 234 7381, Fax. +1 708 296 8556 Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Middle East: see Italy Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Internet: http://www.semiconductors.philips.com/ps/ Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (1) BLW898_2.mif June 26, 1996 11:51 am © Philips Electronics N.V. 1996 SCA50 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127041/1200/02/pp12 Date of release: 1996 Jul 16 Document order number: 9397 750 00966]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Internal input and output matching for easy matching, Two NPN silicon planar epitaxial transistors in push-pull high gain and ef
DATA SHEET BLV904 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Preliminary specification 1996 Feb 08 File under Discrete Semiconductors, SC08b FEATURES APPLICATIONS • Emitter ballasting resistors for optimum • Common emitter class-AB operation in base stations in temperature profile the 820 to 960 M
DATA SHEET BLV862 UHF linear push-pull power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification 1996 Jun 11 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double stage internal input and output matching PIN SYMBOL DESCRIPTION networks for an optimum wideband capabilit
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideba
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGY887 CATV amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input handbook, halfpage • Excellent return loss properties 2 common •
DISCRETE SEMICONDUCTORS DATA SHEET BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 1999 Mar 30
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 1999 Mar 30 FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2, 3 com
DISCRETE SEMICONDUCTORS DATA SHEET BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • G
DISCRETE SEMICONDUCTORS DATA SHEET BGY43 VHF power amplifier module Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY43 VHF power amplifier module Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT132B • Broadband VHF amplifier PIN DESCRIPTION • 13 W output power 1 RF input handbook, halfpage • Direct o
DISCRETE SEMICONDUCTORS DATA SHEET BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules Product specification 1996 Jun 06 Supersedes data of May 1991
DISCRETE SEMICONDUCTORS DATA SHEET BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules Product specification 1996 Jun 06 Supersedes data of May 1991 File under Discrete Semiconductors, SC09 BGY32; BGY33; VHF power amplifier modules BGY35; BGY36 FEATURESS PINNING - SOT132B • Broadband VHF amplifie
DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification 1996 May 13 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification 1996 May 13 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT321B • 6 V nominal supply voltage PIN DESCRIPTION • 2 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 V
DATA SHEET BGY209 UHF amplifier module
DISCRETE SEMICONDUCTORS DATA SHEET BGY209 UHF amplifier module Objective specification 1996 May 29 File under Discrete Semiconductors, SC09 FEATURES PINNING • 4.8 V nominal supply voltage PIN DESCRIPTION • 2.8 W output power 1 RF input • Easy output power control by DC voltage. 2 VC 3 VS APPLICATION
BTA/BTB24
BTA/BTB24, BTA25, BTA26 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: A2 Symbol Value Unit A2 A2 IT(RMS) 25AGA1 VDRM/VRRM 600 and 800 V A1 A1 A2 A2IGGGT (Q1) 35 to 50 mA TO-220AB A2 TO-220AB DESCRIPTION Insulated (BTB24)(BTA24) Available either in through-hole of surface and T25 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA225- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA216X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA216- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA212X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA212- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA208X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA208- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BTA151- 500R 650R 800R switching and phase control VDRM, Repetitive peak off-state 500 650 800 V applications. VRRM vol
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BTA140- 500 600 800 bidirectional transient and blocking VDRM Repetitive peak off-state 500 600 800 V voltage capability and hi
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT300- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT258- 500R 600R 800R switching and phase control VDRM, Repetitive peak off-state 500 600 800 V applications. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. UNIT thyristor in a plastic envelope, suitable for surface mounting, intended for use VDRM, Repetitive peak off-state voltages 400 V in general purpose switching and VRRM phase control applications. This
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO92 variant PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT169BDEGswitching and phase control VDRM, Repetitive peak 200 400 500 600 V applications. These devices are VRRM
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT168 BW DW EW GW intended for use in Residual Current VDRM, Repetitive peak 200 4
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in Residual Current BT168BDEGDevices/ Ground Fault Interrupters VDRM, Repetitive peak 200 400 5
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151X- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151F- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and