Download: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b

DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b FEATURES DESCRIPTION • Internal input and output matching for easy matching, Two NPN silicon planar epitaxial transistors in push-pull high gain and efficiency configuration, intended for linear common emitter • Poly-silicon emitter ballasting resistors for an optimum class-AB operation. The transistor is encapsulated in a temperature profile 4-lead SOT262A2 flange envelope with 2 ceramic caps. The flange provides the common emitter connection for...
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DISCRETE SEMICONDUCTORS

DATA SHEET BLV950 UHF push-pull power transistor

Product specification 1996 Jan 26 File under Discrete Semiconductors, SC08b, FEATURES DESCRIPTION • Internal input and output matching for easy matching, Two NPN silicon planar epitaxial transistors in push-pull high gain and efficiency configuration, intended for linear common emitter • Poly-silicon emitter ballasting resistors for an optimum class-AB operation. The transistor is encapsulated in a temperature profile 4-lead SOT262A2 flange envelope with 2 ceramic caps. The flange provides the common emitter connection for • Gold metallization ensures excellent reliability. both transistors.

APPLICATIONS

c1 • Base station transmitters in the 800 to 960 MHz range. handbook, halfpage12b1 PINNING - SOT262A2 e PIN SYMBOL DESCRIPTION b2 1 c1 collector155342c2 collector 2 Top view MAM031 c2 3 b1 base14b2 base 2 Fig.1 Simplified outline and symbol. 5 e emitter QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. fVPGηdMODE OF OPERATION CELpC3(MHz) (V) (W) (dB) (%) (dBc) CW, class-AB 900 26 150 ≥8 ≥45 − 960 26 150 ≥7.5 ≥45 − 2-tone, class-AB 900 26 150 (PEP) ≥8.5 ≥35 ≤−30 960 26 150 (PEP) ≥8 ≥35 ≤−30

WARNING

Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Jan 26 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 12 A IC(AV) average collector current − 12 A Ptot total power dissipation (DC) Tmb = 25 °C; note 1 − 340 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to Ptot = 340 W; Tmb = 25 °C; note 1 0.52 K/W mounting base Rth mb-h thermal resistance from mounting note 1 0.15 K/W base to heatsink Note to “Limiting values” and “Thermal characteristics” 1. Total device; both sections equally loaded. 1996 Jan 26 3, 2 MLD254 MLD255 handbook1, 0 400halfpage handbook, halfpage Ptot (W) I C (A) 300 (2) (1) (2) 10 200 (1) 10110 102 V (V) 0 40 80 120 160CE Th ( o C) Total device; both sections equally loaded. Total device; both sections equally loaded. (1) Tmb = 25 °C. (1) Continuous operation. (2) Th = 70 °C. (2) Short time during mismatch.

Fig.2 DC SOAR. Fig.3 Power derating curve.

1996 Jan 26 4,

CHARACTERISTICS

Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 60 mA 70 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 150 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 3 mA 3 − − V ICES collector leakage current VBE = 0; VCE = 28 V − − 5 mA hFE DC current gain VCE = 10 V; IC = 4.5 A; note 1 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; − 75 − pF f = 1 MHz; note 2 Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.01. 2. Value Cc is that of the die only, it is not measurable because of internal matching network. MLD256 MLD257 80 300 handbook, halfpage handbook, halfpage hFE Cc (pF) 60 (1) (2) 0004812 16 0 10 20 30 40 50 IC (A) VC B (V) Measured under pulsed conditions; tp ≤ 300 µs; δ ≤ 0.01. Value Cc is that of the die only, it is not measurable because of (1) V = 26 V. internal matching network.CE (2) V = 10 V. IE = ie = 0; f = 1 MHz.CE Fig.4 DC current gain as a function of collector Fig.5 Collector capacitance as a function of current; typical values. collector-base voltage; typical values. 1996 Jan 26 5, APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.15 K/W. f V MODE OF OPERATION CE ICQ PL Gp ηC d3 (MHz) (V) (mA) (W) (dB) (%) (dBc) CW, class-AB 900 26 2 × 100 150 ≥8 ≥45 − typ. 9 typ. 50 960 26 2 × 100 150 ≥7.5 ≥45 − typ. 8.5 typ. 50 2-tone, class-AB note 1 26 2 × 100 150 (PEP) ≥8.5 ≥35 ≤−28 typ. 9.5 typ. 40 typ. −31 note 2 26 2 × 100 150 (PEP) ≥8 ≥35 ≤−30 typ. 9 typ. 40 typ. −33 Notes 1. f1 = 900.0 MHz; f2 = 900.1 MHz. 2. f1 = 960.0 MHz; f2 = 960.1 MHz. Ruggedness in class-AB operation The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the conditions: PL = 150 W; f = 960 MHz; VCE = 26 V; ICQ = 2 × 100 mA; Th = 25 °C; Rth mb-h = 0.15 K/W and also a load mismatch of VSWR = 5 : 1 through all phases at PL = 150 W (PEP) and f1 = 960.0 MHz and f2 = 960.1 MHz. MLD258 MLD259 12 60 200 handbook, halfpage handbook, halfpage

P

G Lp η (W) (dB) (%) G p 150 8 40η420000050 100 150 200 0 10 20 30PL(W) P i (W) VCE = 26 V. VCE = 26 V. ICQ = 2 × 100 mA. ICQ = 2 × 100 mA. f = 960 MHz. f = 960 MHz. Fig.6 Power gain and efficiency as functions of Fig.7 Load power as a function of input power; load power; typical values. typical values. 1996 Jan 26 6, MLD260 MLD261 12 60 200 handbook, halfpage handbook, halfpagePLGpη(PEP) (dB) (%) (W) G 150p 8 40η420000050 100 150 200 0 10 20 30PL(PEP) (W) Pi (PEP) (W) VCE = 26 V. VCE = 26 V. ICQ = 2 × 100 mA. ICQ = 2 × 100 mA. f1 = 960.0 MHz. f1 = 960.0 MHz. f2 = 960.1 MHz. f2 = 960.1 MHz. Fig.8 Power gain and efficiency as functions of Fig.9 Load power as a function of input power; load power; typical values. typical values MLD262 handbook, halfpage d im (dBc) d3 d5 d7 0 50 100 150 200PL(PEP) (W) VCE = 26 V. ICQ = 2 × 100 mA. f1 = 960.0 MHz. f2 = 960.1 MHz. Fig.10 Intermodulation distortion as a function of load power; typical values. 1996 Jan 26 7, handbook, full pagewidth C3 C5 C7 C9 C2 L8 L14 C31 C32 Vbias VS R5 C1 R1 R3 C30 C29 C4 C6 C8 C33 C35 L9 C34 L15 L10 L16 L6 L20L22 L1 L4 L24 L26 L28 C19DUT C27 L29 L2 output input C21 C22 C23 C24 C25 C26 50 Ω 50 Ω L30 L3 C20 C28 L5 L25 LL7 27 L21 L23 L11 L17 L18 C36 C37 L12 C10 C13 C15 C17 C38 R2 R4 C41 C42 R6 C39 Vbias VS C11 L13 L19 C40 C12 C14 C16 C18 MLD263

Fig.11 Class-AB test circuit at 900 to 960 MHz.

1996 Jan 26 8, List of components (see Figs 11 and 12) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C10 tantalum capacitor 2.2 µF, 35 V 2022 019 00058 C2, C11, C30, C34, multilayer ceramic chip 300 pF, 200 V C37, C41 capacitor; note 1 C3, C12 electrolytic capacitor 1 µF, 63 V 2222 085 78108 C4, C13 electrolytic capacitor 10 µF, 16 V 2222 085 75109 C5, C14, C31, C40 tantalum capacitor 1 µF, 35 V 2022 019 00056 C6, C15, C29, C42 multilayer ceramic chip 100 nF, 50 V 2222 581 76641 capacitor C7, C16 multilayer ceramic chip 10 nF, 50 V 2222 581 76627 capacitor C8, C17 multilayer ceramic chip 330 pF, 200 V capacitor; note 1 C9, C18, C19, C20, multilayer ceramic chip 39 pF, 500 V C35, C36 capacitor; note 1 C23 multilayer ceramic chip 2 pF, 500 V capacitor; note 1 C25 multilayer ceramic chip 3.9 pF, 500 V capacitor; note 1 C21, C22 film dielectric trimmer 9 pF 2222 809 09005 C24, C26 film dielectric trimmer 3.5 pF 2222 809 05215 C27, C28 multilayer ceramic chip 68 pF, 500 V capacitor; note 1 C32, C39 electrolytic capacitor 10 µF, 63 V 2222 030 28109 C33, C38 electrolytic capacitor 1 µF, 63 V 2222 030 38108 L1, L3 stripline; note 2 35 Ω length 50.7 mm width 4 mm L2 semi-rigid cable; note 3 50 Ω ext. conductor length 50.7 mm ext. diameter 2.2 mm L4, L5 stripline; note 2 35 Ω length 26.5 mm width 4 mm L6, L7 stripline; note 2 20 Ω length 9.2 mm width 8 mm L10, L11, L16, L17 stripline; note27Ωlength 2.5 mm width 27 mm L8, L13, L14, L19 grade 4S2 Ferroxcube 4330 030 36300 chip-bead L9, L12 microchoke 4.7 µH 4322 057 04781 L15, L18 4 turns enamelled 1 mm 100 nH int. diameter 6 mm copper wire close wound L20, L21 stripline; note 2 14 Ω length 6 mm width 12.5 mm 1996 Jan 26 9, COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. L22, L23 stripline; note 2 14 Ω length 7 mm width 12.5 mm L24, L25 stripline; note 2 18 Ω length 11 mm width 9 mm L26, L27 stripline; note 2 50 Ω length 6.5 mm width 2.5 mm L28, L30 stripline; note 2 30 Ω length 49.3 mm width 5 mm L29 semi-rigid cable; note 3 50 Ω ext. conductor length 49.3 mm ext. diameter 3.6 mm R5, R6 metal film resistor 0.4 W, 1 Ω 2322 151 71008 R1, R2 metal film resistor 0.4 W, 5.11 Ω 2322 151 75118 R3, R4 metal resistor 1 W, 5.11 Ω 2322 153 75118 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with microfibre-glass dielectric (εr = 2.2); thickness 1⁄32"; thickness of the copper sheet 2 × 35 µm. 3. Semi-rigid cables soldered respectively on striplines L1 and L28. 1996 Jan 26 10, 64.5 68.5 handbook, full pagewidth 85 85 C2 C3 C5 C7 C33 C32 V C1 C9 C35R1 L14 C31 C29bias L9 L15 VC8 SC34 C30 R5 L8 C4 C6 L28 L16 R3 L10 L3 L20 L22 L29 L6 L24 C19 L4 C23 C25 L26 C27 C21 C22 C24 C26 C20 L27L5 C28 L7 L25 L11 L1 L21 L23 L30 R6 L13 C13 L17 L19 L2 C15 L12 C17 C41 V C37bias VC10 R2 C18 L18 R4 S C36 C40 C42 C11 C12 C14 C16 C38 C39 MLD264 Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.

Fig.12 Component layout and printed-circuit board for 900 to 960 MHz class-AB test circuit.

1996 Jan 26 11, MLD265 - 1 MLD266 - 184handbook, halfpage handbook, halfpageZiZ(Ω) r i L(Ω) 6 RLxi2XL −2 −2 −4 840 880 920 960 1000 840 880 920 960 1000 f (MHz) f (MHz) VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. Th = 25 °C; Rth mb-h = 0.15 K/W.

Fig.13 Input impedance as a function of Fig.14 Load impedance as a function of

frequency (series components); frequency (series components); typical values per section. typical values per section. MLD267 handbook, halfpageGp(dB) handbook, halfpage4ZiZLMBA451 840 880 920 960 1000 f (MHz) VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W.

Fig.15 Power gain as a function of frequency;

typical values. Fig.16 Definition of transistor impedance. 1996 Jan 26 12,

PACKAGE OUTLINE

0.25 1/1 page = 296 mm (Datasheet) 11 max 11 max 27 mm 0.13 5.4 2.5 max 2.15 1.65 0.64 21.85 seating plane 0.25 M 5.9 5.5 (4x) 2.541210.4 3.3 9.8 15.6 max 3.0 max345.525 11.05 27.94 MLA431 - 1 34.3 max Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed.

Fig.17 SOT262A2.

1996 Jan 26 13,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jan 26 14,

NOTES

1996 Jan 26 15,

Philips Semiconductors – a worldwide company

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Publication thereof does not convey nor imply any license under patent- or New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, other industrial or intellectual property rights. Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Printed in The Netherlands Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, 127061/1100/02/pp16 Date of release: 1996 Jan 26 KARACHI 75600, Tel. (021)587 4641-49, Document order number: 9397 750 00593 Fax. (021)577035/5874546]
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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA212- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control BTA208X- 600B 800B circuits or with other highly inductive VDRM Repetitive peak off-state voltages 600 800 V loads. The
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope intended for use in motor control circuits or with BTA208- 600B 800B other highly inductive loads. These VDRM Repetitive peak off-state voltages 600 800 V devices w
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BTA151- 500R 650R 800R switching and phase control VDRM, Repetitive peak off-state 500 650 800 V applications. VRRM vol
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BTA140- 500 600 800 bidirectional transient and blocking VDRM Repetitive peak off-state 500 600 800 V voltage capability and hi
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT300- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT258- 500R 600R 800R switching and phase control VDRM, Repetitive peak off-state 500 600 800 V applications. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. UNIT thyristor in a plastic envelope, suitable for surface mounting, intended for use VDRM, Repetitive peak off-state voltages 400 V in general purpose switching and VRRM phase control applications. This
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO92 variant PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT169BDEGswitching and phase control VDRM, Repetitive peak 200 400 500 600 V applications. These devices are VRRM
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT168 BW DW EW GW intended for use in Residual Current VDRM, Repetitive peak 200 4
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in Residual Current BT168BDEGDevices/ Ground Fault Interrupters VDRM, Repetitive peak 200 400 5
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151X- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151F- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151- 500R 650R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and high therma