Download: DATA SHEET BLV904 UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Preliminary specification 1996 Feb 08 File under Discrete Semiconductors, SC08b FEATURES APPLICATIONS • Emitter ballasting resistors for optimum • Common emitter class-AB operation in base stations in temperature profile the 820 to 960 MHz frequency range. • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. DESCRIPTION handbook, halfpage c NPN silicon planar epitaxial transistor encapsulated ina548-lead SOT409B SMD package with a ceramic cap. ...
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DISCRETE SEMICONDUCTORS

DATA SHEET BLV904 UHF power transistor

Preliminary specification 1996 Feb 08 File under Discrete Semiconductors, SC08b, FEATURES APPLICATIONS • Emitter ballasting resistors for optimum • Common emitter class-AB operation in base stations in temperature profile the 820 to 960 MHz frequency range. • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits.

DESCRIPTION

handbook, halfpage c NPN silicon planar epitaxial transistor encapsulated ina548-lead SOT409B SMD package with a ceramic cap. b All leads are isolated from the mounting base. 8 1 MSA467 e PINNING - SOT409B Top view PIN SYMBOL DESCRIPTION 1, 4, 5, 8 e emitter 2, 3 b base Fig.1 Simplified outline and symbol. 6, 7 c collector QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. fVPGηMODE OF OPERATION CELpC(MHz) (V) (W) (dB) (%) CW, class-AB 960 26 5 ≥11 ≥50 1996 Feb 08 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 1.2 A IC(AV) average collector current − 1.2 A Ptot total power dissipation Tmb = 60 °C; note 1 − 14 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to Ptot = 14 W; Tmb = 60 °C; note 1 10 K/W mounting base Note to the “Limiting values” and “Thermal characteristics” 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “This handbook, Section Mounting and soldering”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 60 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 28 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 4 − − V ICES collector leakage current VCE = 28 V; VBE = 0 − − 3 mA hFE DC current gain VCE = 20 V; IC = 600 mA 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz − 6 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 2.5 − pF 1996 Feb 08 3, APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. fVIMODE OF OPERATION CE CQ PL Gp ηC (MHz) (V) (mA) (W) (dB) (%) ≥11 ≥50 CW, class-AB 960 26 15 5 typ. 12 Ruggedness in class-AB operation The BLV904 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 °C. MGD182 MGD183 16 80 8 handbook, halfpage handbook, halfpage Gp ηC PL (dB) G (%) (W)p 12 60 6 ηC 8 4044202000024600.2 0.4 0.6 PL (W) PIN (W) CW, class-AB; f = 960 MHz; VCE = 26 V; ICQ = 15 mA; Tmb = 25 °C. CW, class-AB; f = 960 MHz; VCE = 26 V; ICQ = 15 mA; Tmb = 25 °C. Fig.2 Power gain and collector efficiency as Fig.3 Load power as a function of input functions of load power; typical values. power; typical values. 1996 Feb 08 4, PACKAGE OUTLINE handbook, full pagewidth 0.15 2.36 0.10 2.03 0.84 0o to 2o 0.68 0.0 0.1 7.47 7.26 4.37 3.99 0.58 0.43 45 1.27 5.41 5.0081MSA468 Dimensions in mm. Fig.4 SOT409B.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 08 5]
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