Download: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a

DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a FEATURES PINNING SOT262B • Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideband capability and high gain 1 c1 collector 1 • Polysilicon emitter ballasting resistors for an optimum 2 c2 collector 2 temperature profile 3 b1 base 1 • Gold metallization ensures excellent reliability. 4 b2 base25eemitter APPLICATION • Common emitter class-A operation in linear transposers/transmi...
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DISCRETE SEMICONDUCTORS

DATA SHEET BLV859 UHF linear push-pull power

transistor Product specification 1996 Jul 26 Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a, FEATURES PINNING SOT262B • Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideband capability and high gain 1 c1 collector 1 • Polysilicon emitter ballasting resistors for an optimum 2 c2 collector 2 temperature profile 3 b1 base 1 • Gold metallization ensures excellent reliability. 4 b2 base25eemitter

APPLICATION

• Common emitter class-A operation in linear transposers/transmitters (television) in the handbook, halfpage c1 470 to 860 MHz frequency band. 1 2 b1

DESCRIPTION

e NPN silicon planar transistor with two sections in push-pull b2 configuration. The device is encapsulated in a SOT262B554-lead rectangular flange package, with two ceramic caps. 3 4 Top view It delivers a Po sync = 20 W in class-A operation at MAM031 c2 860 MHz and a supply voltage of 25 V. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. fVIPGMODE OF OPERATION CE CQ o sync p (MHz) (V) (A) (W) (dB) CW class-A 860 25 2 × 2.25 ≥20(1) ≥10(1) Note 1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB.

WARNING

Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Jul 26 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 15 A IC(AV) average collector current − 15 A Ptot total power dissipation Tmb = 70 °C; note 1 − 145 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting-base Ptot = 145 W; Tmb = 70 °C note 1 0.9 K/W Rth mb-h thermal resistance from mounting-base to heatsink note 1 0.15 K/W Note to Limiting values and Thermal characteristics 1. Total device; both sections equally loaded. MGD540 handbook, halfpage Ptot (W) (2) (1) 0 40 80 120 160 Tmb °C (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 Power derating curve. 1996 Jul 26 3,

CHARACTERISTICS

Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 30 mA; IE = 0 60 − − V V(BR)CEO collector-emitter breakdown voltage IC = 60 mA; IB = 0 28 − − V V(BR)EBO emitter-base breakdown voltage IE = 1.2 mA; IC = 0 2.5 − − V ICBO collector-base leakage current VCB = 27 V; VBE = 0 − − 3 mA ICEO collector-emitter leakage current VCE = 20 V − − 6 mA hFE DC current gain VCE = 25 V; IC = 2.25 A 30 − 140 Cc collector capacitance VCB = 25 V; IE = ie = 0; − 36(1) − pF f = 1 MHz Cre feedback capacitance VCE = 25 V; IB = 0; f = 1 MHz − 22 − pF Note 1. The value of Cc is that of the die only; it is not measurable, because of the internal matching network. MGD541 MGD542 160 80 handbook, halfpage handbook, halfpage h CFE c (pF) 0 200246010 20 30 40 IC (A) VCB (V) VCE = 25 V; tp = 500 µs; δ = <1 %. IE = ie = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector Fig.4 Collector capacitance as a function of current; typical values. collector-base voltage; typical values. 1996 Jul 26 4, APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull class-A test circuit. f VCE ICQ Po sync Gp dMODE OF OPERATION im (MHz) (V) (A) (W) (dB) (dB) CW class-A 860 25 2 × 2.25 ≥20(1) ≥10(1) ≤−54(1) CW class-A 860 25 2 × 2.25 ≥20(2) ≥10(2) ≤−51(2) Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the conditions: VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; Th = 25 °C; Po sync = 20 W. MGD543 MGD544 80 14 handbook, halfpage handbook, halfpage Po sync (W) Gp (1)(1) (2) (dB) 60 (2) 0202468020 40 60 80 Pi sync (W) Po sync (W) VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 25 °C. (1) Th = 25 °C. (2) Th = 70 °C. (2) Th = 70 °C. Fig.5 Output power as a function of input power; Fig.6 Power gain as a function of output power; typical values. typical values. 1996 Jul 26 5, MGD545 MGD546 −10 -40 handbook, halfpage handbook, halfpage dim dim (dB) (dB) −30 -50 (1) (1) (2) (2) −50 -60 −70 -70 0 20 40 60 803456IC (A)Po sync (W) VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). VCE = 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 70 °C. (1) Th = 70 °C. (2) Th = 25 °C. (2) Th = 25 °C. Fig.7 Intermodulation distortion as a function of Fig.8 Intermodulation distortion as a function of output power; typical values. collector current; typical values. 1996 Jul 26 6, 1996 Jul 26 7 Vsupply C5 R4 C6L17 C2 C3 TR2 TR2 P1 R2 C1 TR1 R3 R1 +VBB +VCC L7 L9 C4 C7 L5 DUT L11 C9 C10 C13 L1 L15 R5 L3 L13 output C15 50 Ω input B1 C16 C17C18 C19 C20C21C22 B2 50 Ω C14 R6 L2 L4 L14L16 C8 L6 L12 C11 C12 MGD547 L8 L10

Fig.9 Class-A test circuit at f = 860 MHz.

handbook, full pagewidth, handbook, full pagewidth 115 TR1 R3 P1 TR2 V R4 C5 CC C1 L17 C3 C6 C13 R1 R2 C2 C4 B1 B2

GND

L7 L9 C7 L1 & L2 C16 & C17 C20 & C21 C9 L5BCL11 C19 & C20 C10 Ω R5 L3 L13 50 50 Ω input C14 BLV859 C15 output R6 L4 L14 L6BCL12 L15 C12 C8 C18 & C19 C22 & C23 & C11 C21 & C22 L8 L10 L16 MGD551 inner lead and outer lead are shorted. (repeat for each balun) Dimensions in mm. Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit. 1996 Jul 268ECB, List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C3, C5, C6 multilayer ceramic chip capacitor; 15 nF 805 2222 590 16629 C4 solid aluminium capacitor 47 µF; 25 V 2222 030 36479 C7, C8 multilayer ceramic chip capacitor 10 nF 805 2222 590 16627 C9, C10, C11, C12 multilayer ceramic chip capacitor 100 nF 1206 2222 591 16641 C13 solid aluminium capacitor 10 µF; 63 V 2222 030 381109 C14, C15 multilayer ceramic chip capacitor; note 1 47 pF C16 multilayer ceramic chip capacitor; note 1 8.2 pF C17, C21 Tekelec Giga trim 37271 0.6 to 4.5 pF C18 multilayer ceramic chip capacitor; note 1 13 pF C19 multilayer ceramic chip capacitor; note 1 3.9 pF C20 multilayer ceramic chip capacitor; note 1 12 pF C22 multilayer ceramic chip capacitor; note 1 9.1 pF L1, L2, L15, L16 stripline; note 2 50Ω2× 30.6 mm L3, L4 stripline; note 2 50Ω2× 9.5 mm L5, L6 stripline; note 2 32.4Ω4× 3 mm L7, L8, L9, L10 stripline; note 2 16.2 Ω 9.5 × 2.6 mm L11, L12 stripline; note 2 37.5 Ω 3.5 × 3.4 mm L13, L14 stripline; note 2 50Ω2× 13.9 mm L17 stripline; note 2 77.7Ω1× 120 mm B1, B2 Semi rigid coax balun UT70-25 Z = 25 Ω, ±1.5 Ω 70 mm R1 SMD resistor 220 Ω 805 2322 734 22201 R2 SMD resistor 1.8 Ω 805 2322 734 21808 R3 SMD resistor 2.7 kΩ 805 2322 734 22702 R4 SMD resistor 33 Ω 805 2322 734 23309 R7, R8 SMD resistor 3.3 Ω 805 2322 734 23308 P1 Murata potentiometer 1 kΩ RG4M08-102VM-TG TR1 NPN transistor BD139 9330 912 20112 TR2 double PNP transistor BVC62 5332 130 60505 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad PCB: Rogers ULTRALAM 200 (B0300M1046QB) (εr = 2.55); thickness 0.76 mm. 1996 Jul 26 9, MGD548 MGD54988handbook, halfpage handbook, halfpage Z Zi L (Ω) (Ω) 6 RL xi

XL

ri00−2 450 550 650 750 850 950 450 550 650 750 850 950 f (MHz) f (MHz) VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C. VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C. Fig.11 Input impedance (per section) as a function Fig.12 Load impedance (per section) as a function of frequency (series components); typical of frequency (series components); typical values. values. MGD550 handbook, halfpage Gp (dB) 8 handbook, halfpageZiZLMBA451 450 550 650 750 850 950 f (MHz) VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C. Fig.13 Gain as a function of frequency; typical values. Fig.14 Definition of transistor impedance. 1996 Jul 26 10, PACKAGE OUTLINE handbook, full pagewidth 0.13 5.4 2.47 max 2.20 1.65 21.85 seating plane 0.25 M 8.51 8.25 (4x) 2.541210.4 3.3 9.8 15.6 max 3.0 max3411.05 27.94 34.3 max MSA453 Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed. Fig.15 SOT262B. 1996 Jul 26 11,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 26 12,

NOTES

1996 Jul 26 13,

NOTES

1996 Jul 26 14,

NOTES

1996 Jul 26 15,

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Pasica 5/v, 11000 BEOGRAD, Middle East: see Italy Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Internet: http://www.semiconductors.philips.com Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (1) BLV859_2.mif July 18, 1996 12:44 pm © Philips Electronics N.V. 1996 SCA51 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127041/1200/02/pp16 Date of release: 1996 Jul 26 Document order number: 9397 750 00987]
15

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GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 500R 600R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151X- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151F- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151- 500R 650R 800R bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and high therma
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT150- 500R 600R 800R switching and phase control VDRM, Repetitive peak off-state 500 600 800 V applications. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO92 variant PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT149BDEGswitching and phase control VDRM, Repetitive peak 200 400 500 600 V applications. These devices are VRRM
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT148W- 400R 500R 600R intended for use in general purpose VDRM, Repetitive peak off-state 400 500 600 V switching and phase