Download: BTA/BTB24

BTA/BTB24, BTA25, BTA26 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: A2 Symbol Value Unit A2 A2 IT(RMS) 25AGA1 VDRM/VRRM 600 and 800 V A1 A1 A2 A2IGGGT (Q1) 35 to 50 mA TO-220AB A2 TO-220AB DESCRIPTION Insulated (BTB24)(BTA24) Available either in through-hole of surface and T25 A1 A2 mount packages, the BTA/BTB24-25-26 triac G series is suitable for general purpose AC power D2PAK switching. They can be used as an ON/OFF A1 (T25G) function in applications such as static relays, heating regulation, water heaters, induction motor G A2 starting circuits...or for phase control o...
Author: Yasmin Holden Shared: 8/19/19
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BTA/BTB24, BTA25, BTA26

and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: A2 Symbol Value Unit A2 A2 IT(RMS) 25AGA1 VDRM/VRRM 600 and 800 V A1 A1 A2 A2IGGGT (Q1) 35 to 50 mA TO-220AB A2 TO-220AB DESCRIPTION Insulated (BTB24)(BTA24) Available either in through-hole of surface and T25 A1 A2 mount packages, the BTA/BTB24-25-26 triac G series is suitable for general purpose AC power D2PAK switching. They can be used as an ON/OFF A1 (T25G) function in applications such as static relays, heating regulation, water heaters, induction motor G A2 starting circuits...or for phase control operation in high power motor speed controllers, soft start circuits...The snubberless versions (BTA/BTB...W A1 A2 and T25 series) are specially recommended for G use on inductive loads, thanks to their high RD91 TOP3 commutation performances. (BTA25) Insulated(BTA26) By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734). ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) D PAK ATc = 100°C TO-220AB RD91 25 Tc = 90°C TOP3 Ins. TO-220AB Ins. Tc = 75°C ITSM Non repetitive surge peak on-state F = 60 Hz t = 16.7 ms 260 A current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 250ItItValue for fusing tp = 10 ms 450AsCritical rate of rise of on-state current dI/dtIF= 120 Hz Tj = 125°C 50 A/µsG = 2 x IGT , tr ≤ 100 ns V /V Non repetitive surge peak off-state V /Vtp = 10 ms Tj = 25°C DRM RRMDSM RSM Vvoltage + 100 IGM Peak gate current tp = 20 µs Tj = 125°C4APG(AV) Average gate power dissipation Tj = 125°C1WTstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 September 2000 - Ed: 3 1/9,

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS (3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W Symbol Test Conditions Quadrant T25 BTA/BTB Unit T2535 CW BW IGT (1) I - II - III MAX. 35 35 50 mA VD = 12 V RL = 33 Ω VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 500 mA MAX. 50 50 75 mA IL IG = 1.2 IGT I - III MAX. 70 70 80 mA II 80 80 100 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 500 500 1000 V/µs (dI/dt)c (2) Without snubber Tj = 125°C MIN. 13 13 22 A/ms ■ STANDARD (4 Quadrants): BTA25...B, BTA26...B Symbol Test Condit ions Quadrant Value Unit IGT (1) I - II - III 50 mA V = 12VR= 33 Ω IV MAX. 100DLVGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 80 mA IL IG = 1.2 IGT I - III - IV MAX. 70 mA II 160 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 500 V/µs (dV/dt)c (2) (dI/dt)c = 13.3 A/ms Tj = 125°C MIN. 10 V/µs

STATIC CHARACTERISTICS

Symbol Test Conditions Value Unit VTM (2) ITM = 35 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 16 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA MAX. IRRM Tj = 125°C 3 mA Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2/9,

THERMAL RESISTANCES

Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) D PAK °C/W0.8 TO-220AB RD91 (Insulated) 1.1 TOP3 Insulated TO-220AB Insulated 1.7 Rth(j-a) Junction to ambient S = 1 cm D PAK 45 °C/W TOP3 Insulated 50 TO-220AB TO-220AB Insulated S: Copper surface under tab

PRODUCT SELECTOR

Voltage (xxx) Part Number Sensitivity Type Package 600 V 800 V BTB24-xxxBXX50 mA Standard TO-220AB BTA/BTB24-xxxBWXX50 mA Snubberless TO-220AB BTA/BTB24-xxxCWXX35 mA Snubberless TO-220AB BTA25-xxxBXX50 mA Standard RD-91 BTA25-xxxBWXX50 mA Snubberless RD-91 BTA25-xxxCWXX35 mA Snubberless RD-91 BTA26-xxxBXX50 mA Standard TOP3 Ins. BTA26-xxxBWXX50 mA Snubberless TOP3 Ins. BTA26-xxxCWXX35 mA Snubberless TOP3 Ins. T2535-xxxGXX35 mA Snubberless D PAK BTB: Non insulated TO-220AB package

ORDERING INFORMATION BT A 24 - 600 BW TRIAC SERIES

SENSITIVITY & TYPE INSULATION: B: 50mA STANDARD A: insulated VOLTAGE: BW: 50mA SNUBBERLESS B: non insulated 600: 600V CW: 35mA SNUBBERLESS 800: 800V CURRENT: 24: 25A in TO-220AB 25: 25A in Rd91 26: 25A in TOP3 3/9,

T 25 35 - 600 G (-TR) TRIAC SERIES

PACKAGE: CURRENT: 25A G: D 2PAK VOLTAGE: PACKING MODE: 600: 600V Blank: Tube 800: 800V -TR:Tape & Reel SENSITIVITY: 35: 35mA

OTHER INFORMATION

Part Number Marking Weight Base Packingquantity mode BTA/BTB24-xxxyz BTA/BTB24xxxyz 2.3 g 250 Bulk BTA25-xxxyz BTA25xxxyz 20 g 25 Bulk BTA26-xxxyz BTA26xxxyz 4.5 g 120 Bulk T2535-xxxG T2535xxxG 1.5 g 50 Tube T2535-xxxG-TR T2535xxxG 1.5 g 1000 Tape & reel Note: xxx= voltage, y = sensitivity, z = type 4/9,

Fig. 1: Maximum power dissipation versus RMS Fig. 2-1: RMS on-state current versus case

on-state current (full cycle). temperature (full cycle). P (W) IT(RMS) (A) 30 30 BTB/T25 25 25 BTA24 20 20 BTA25/26 15 15 10 1055IT(RMS) (A) Tc(°C) 000510 15 20 25 0 25 50 75 100 125

Fig. 2-2: D PAK RMS on-state current versus Fig. 3: Relative variation of thermal impedance

ambient temperature (printed circuit board FR4, versus pulse duration. copper thickness: 35 µm), full cycle. IT(RMS) (A) K=[Zth/Rth] 4.0 1E+0 3.5 D 2PAK (S=1cm2) Zth(j-c) 3.0 1E-1 2.5 Zth(j-a) BTA/BTB24/T25 2.0 1.5 1E-2 1.0 Zth(j-a)BTA26 0.5 Tamb(°C) tp (s) 0.0 1E-3 0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 4: On-state characteristics (maximum Fig. 5: Surge peak on-state current versus

values). number of cycles. ITM (A) ITSM (A) 300 300 100 250 t=20ms Tj max One cycle 200 Non repetitiveTj initial=25°C 10 Tj=25°C Repetitive 100 Tc=75°C Tj max. Vto = 0.85 V 50 VTM (V) Rd = 16 mΩ Number of cycles100.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 10 100 1000 5/9, Fig. 6: Non-repetitive surge peak on-state Fig. 7: Relative variation of gate trigger current, current for a sinusoidal pulse with width holding current and latching current versus tp < 10ms, and corresponding value of I t. junction temperature (typical values). ITSM (A), I t (A s) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 3000 2.5 Tj initial=25°C dI/dt limitation: 2.0 50A/µs ITSM IGT 1.5ItIH & IL 1.0 0.5 tp (ms) Tj(°C) 100 0.0 0.01 0.10 1.00 10.00 -40 -20 0 20 40 60 80 100 120 140 Fig. 8: Relative variation of critical rate of Fig. 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical decrease of main current versus junction values). temperature. (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 2.4 6 2.2 2.0 1.8 4 1.6 BW/CW/T2535 1.4B31.2 1.0 2 0.8 1 0.6 (dV/dt)c (V/µs) Tj (°C) 0.4 0 0.1 1.0 10.0 100.0 0 25 50 75 100 125 Fig. 10: D PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (°C/W) D PAK 10 S(cm ) 04812 16 20 24 28 32 36 40 6/9,

PACKAGE MECHANICAL DATA D PAK (Plastic) DIMENSIONS

REF. Millimeters Inches

A

E Min. Typ. Max. Min. Typ. Max. C2 L2 A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 D A2 0.03 0.23 0.001 0.009LB0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0.055 L3 A1 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 B2CRBD8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405GG4.88 5.28 0.192 0.208 A2 L 15.00 15.85 0.590 0.624 2.0 MIN. L2 1.27 1.40 0.050 0.055 FLAT ZONE L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 V2 0° 8° 0° 8°

FOOTPRINT DIMENSIONS (in millimeters) D PAK (Plastic)

16.90 10.30 5.08 1.30 3.70 8.90 7/9,

PACKAGE MECHANICAL DATA RD91 (Plastic) DIMENSIONS

L2 A2 L1 REF. Millimeters Inches Min. Max. Min. Max. B2 A 40.00 1.575 C B1 A1 29.90 30.30 1.177 1.193 A2 22.00 0.867 C2 C1 B 27.00 1.063 A1 B1 13.50 16.50 0.531 0.650 B2 24.00 0.945 C 14.00 0.551 N2 N1 C1 3.50 0.138 C2 1.95 3.00 0.077 0.118

B

F E3 0.70 0.90 0.027 0.035 E3 F 4.00 4.50 0.157 0.177II11.20 13.60 0.441 0.535 A L1 3.10 3.50 0.122 0.138 L2 1.70 1.90 0.067 0.075 N1 33° 43° 33° 43° N2 28° 38° 28° 38°

PACKAGE MECHANICAL DATA TOP3 (Plastic) DIMENSIONS

REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 0.181 8/9,

PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS

B C REF. Millimeters Inches b2 Min. Typ. Max. Min. Typ. Max. A 15.20 15.90 0.598 0.625

L

a1 3.75 0.147

F

I a2 13.00 14.00 0.511 0.551AB10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 l4 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c2 c1 0.49 0.70 0.019 0.027a1 c2 2.40 2.72 0.094 0.107 l3 e 2.40 2.70 0.094 0.106 l2 a2 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 b1ML2.65 2.95 0.104 0.116 c1 e l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 9/9]
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