Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151X- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and high thermal cycling VRRM voltages performance. Typical applications IT(AV) Average on-state current 5.7 5.7 5.7 A include motor control, industrial and IT(RMS) RMS on-state current999Adomestic lighting, heating and static ITSM Non-repetitive peak on-state 100 100 100 A switching. current PINNING - ...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT151X- 500 650 800 bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and high thermal cycling VRRM voltages performance. Typical applications IT(AV) Average on-state current 5.7 5.7 5.7 A include motor control, industrial and IT(RMS) RMS on-state current999Adomestic lighting, heating and static ITSM Non-repetitive peak on-state 100 100 100 A switching. current

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case 1 cathodeak2anode 3 gate case isolated123g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -650 -800 VDRM, VRRM Repetitive peak off-state - 500 1 6501 800 V voltages IT(AV) Average on-state current half sine wave; Ths ≤ 87 ˚C - 5.7 A IT(RMS) RMS on-state current all conduction angles - 9 A ITSM Non-repetitive peak half sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 10 ms - 100At= 8.3 ms - 110 A I2t I2t for fusing t = 10 ms - 50 A2s dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/µs on-state current after dIG/dt = 50 mA/µs triggering IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 1996 1 Rev 1.100,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance with heatsink compound - - 4.5 K/W junction to heatsink without heatsink compound - - 6.5 K/W Rth j-a Thermal resistance in free air - 55 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA IL Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA IH Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA VT On-state voltage IT = 23 A - 1.4 1.75 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; off-state voltage exponential waveform Gate open circuit 50 130 - V/µs RGK = 100 Ω 200 1000 - V/µs tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dIG/dt = 5 A/µs tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - µs turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω February 1996 2 Rev 1.100, Ptot / W BT151F Ths(max) / C ITSM / A BT151 10 80 120 conduction form I angle factor a = 1.57 IT TSM degrees a 100 8 30 4 89 60 2.8 1.9 T time 90 2.2 2.2 Tj initial = 125 C max 120 1.9 2.8 80 6 180 1.57 98 4 60 4 107 2 116 0 125012345601 10 100 1000 IF(AV) / A Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak

average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz. ITSM / A BT151 IT(RMS) / A BT151 1000 25 dI T /dt limit 15 I IT TSM T time 5 Tj initial = 125 C max 10us 100us 1ms 10ms 0.01 0.1 1 10 T / s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state

on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Ths ≤ 87˚C. IT(RMS) / A BT151F VGT(Tj) 10 VGT(25 C) BT151 87 C 1.6 8 1.4 6 1.2 0.8 0.6 -50 0 50 100 150 0.4-50 0 50 100 150 Ths / C Tj / C

Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage

versus heatsink temperature Ths. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996 3 Rev 1.100

, IGT(Tj) IT / A BT151 IGT(25 C) BT151 30 3 Tj = 125 C Tj = 25 C 2.5 Vo = 1.06 V Rs = 0.0304 ohms 20 typ max 1.5 15 1 10 0.5500-50 0 50 100 150 0 0.5 1 1.5 2 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-hs (K/W) BT151 IL(25 C) BT145 10 without heatsink compound 2.5 1 with heatsink compound 0.1 1.5Pt1Dp0.01 0.5t00.001 -50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-hs, versus

versus junction temperature Tj. pulse width tp. IH(Tj) dVD/dt (V/us) IH(25 C) BT151 2.5 RGK = 100 Ohms 1.5 1 100 gate open circuit 0.5 0 10 -50 0 50 100 150 0 50 100 150 Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,

versus junction temperature Tj. dVD/dt versus junction temperature Tj.

February 1996 4 Rev 1.100

,

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max Recesses (2x) 2.8 2.5 6.4 0.8 max. depth 15.8 15.8 19 seating max max. max. plane 3 max. not tinned 2.5 13.5 min. 1230.4 M 1.0 (2x) 0.6 2.54 0.90.5 0.7 5.08 2.5 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. The improved isolation rating applies only to the SOT186 version A envelope. February 1996 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 6 Rev 1.100]
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