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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT150- 500R 600R 800R switching and phase control VDRM, Repetitive peak off-state 500 600 800 V applications. These devices are VRRM voltages intended to be interfaced directly to IT(AV) Average on-state current 2.5 2.5 2.5 A microcontrollers, logic integrated IT(RMS) RMS on-state current444Acircuits and other low power gate ITSM Non-repetitive peak on-state 25 25 25 A trigger circuits. current PINNING - TO220AB PIN...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT150- 500R 600R 800R switching and phase control VDRM, Repetitive peak off-state 500 600 800 V applications. These devices are VRRM voltages intended to be interfaced directly to IT(AV) Average on-state current 2.5 2.5 2.5 A microcontrollers, logic integrated IT(RMS) RMS on-state current444Acircuits and other low power gate ITSM Non-repetitive peak on-state 25 25 25 A trigger circuits. current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 cathodeak2anode 3 gate tab anode123g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500R -600R -800R V , V Repetitive peak off-state - 5001 1DRM RRM 600 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 113 ˚C - 2.5 A IT(RMS) RMS on-state current all conduction angles - 4 A ITSM Non-repetitive peak half sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 10 ms - 25At= 8.3 ms - 27 A I2t I2t for fusing t = 10 ms - 3.1 A2s dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs on-state current after dIG/dt = 50 mA/µs triggering IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 1996 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance - - 2.5 K/W junction to mounting base Rth j-a Thermal resistance in free air - 60 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current VD = 12 V; IT = 0.1 A - 15 200 µA IL Latching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA IH Holding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA VT On-state voltage IT = 5 A - 1.23 1.8 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.3 - V ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µs off-state voltage exponential waveform; RGK = 100 Ω tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - µs time dIG/dt = 0.2 A/µs tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A; - 100 - µs turn-off time VR = 10 V; dITM/dt = 10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ February 1996 2 Rev 1.100, Ptot / W BT148 Tmb(max) / C ITSM / A BT148 6 110 30 conduction form angle factor I IT TSMdegrees 5 a30 112.5 254 60 2.8 1.9 T time 90 a = 1.572.2 2.2 4 115 20 Tj initial = 125 C max120 1.9 180 1.57 2.8 3 117.54 15 2 120 10 1 122.550125 0 0.5 1 1.5 2 2.5 3 01 10 100 1000 IF(AV) / A Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak

average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz. ITSM / A BT148 IT(RMS) / A BT1501000 12 dI T /dt limit 1006IIT TSM4Ttime 2 Tj initial = 125 C max 10 0 10us 100us 1ms 10ms 0.01 0.1 1 10 T / s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state

on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Tmb ≤ 113˚C. IT(RMS) / A BT148 VGT(Tj) 5 VGT(25 C) BT151 1.6 113C41.4 1.2 0.8 0.6 -50 0 50 100 150 0.4-50 0 50 100 150 Tmb / C Tj / C

Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage

versus mounting base temperature Tmb. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996 3 Rev 1.100

, IGT(Tj) IT / A BT148 IGT(25 C) BT148 12 3 Tj = 125 C Tj = 25 C 2.5 Vo = 1.26 V typ max Rs = 0.099 ohms 1.5140.5200-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT148 IL(25 C) BT145 10 2.5 1.5 0.1Ptp1D0.5t00.01 -50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus

versus junction temperature Tj. pulse width tp. IH(Tj) dVD/dt (V/us) IH(25 C) BT145 2.5 RGK = 100 ohms 1.5 1 10 0.501-50 0 50 100 150 0 50 100 150 Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,

versus junction temperature Tj. dVD/dt versus junction temperature Tj.

February 1996 4 Rev 1.100

, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1996 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 6 Rev 1.100]
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