Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT148W- 400R 500R 600R intended for use in general purpose VDRM, Repetitive peak off-state 400 500 600 V switching and phase control VRRM voltages applications. These devices are IT(AV) Average on-state current 0.6 0.6 0.6 A intended to be interfaced directly to IT(RMS) RMS on-state current111Amicrocontrollers, logic integrated ITSM Non-repetitive peak on-state 10 10 10 A circuits and other low power gate current trigger ...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT148W- 400R 500R 600R intended for use in general purpose VDRM, Repetitive peak off-state 400 500 600 V switching and phase control VRRM voltages applications. These devices are IT(AV) Average on-state current 0.6 0.6 0.6 A intended to be interfaced directly to IT(RMS) RMS on-state current111Amicrocontrollers, logic integrated ITSM Non-repetitive peak on-state 10 10 10 A circuits and other low power gate current trigger circuits.

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION 1 cathodeak2anode 3 gate g tab anode123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -400R -500R -600R VDRM, VRRM Repetitive peak off-state - 400 1 5001 6001 V voltages IT(AV) Average on-state current half sine wave; Tsp ≤ 112 ˚C - 0.6 A IT(RMS) RMS on-state current all conduction angles - 1 A ITSM Non-repetitive peak half sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 10 ms - 10At= 8.3 ms - 11 A I2t I2t for fusing t = 10 ms - 0.5 A2s dIT/dt Repetitive rate of rise of ITM = 4 A; IG = 200 mA; - 50 A/µs on-state current after dIG/dt = 200 mA/µs triggering IGM Peak gate current - 1 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 1.2 W PG(AV) Average gate power over any 20 ms period - 0.12 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 1996 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-sp Thermal resistance - - 15 K/W junction to solder point Rth j-a Thermal resistance pcb mounted, minimum footprint - 156 - K/W junction to ambient pcb mounted, pad area as in fig:14 - 70 - K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current VD = 12 V; IT = 0.1 A - 50 200 µA IL Latching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA IH Holding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA VT On-state voltage IT = 2 A - 1.3 1.5 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V VR = VRRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.3 - V ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µs off-state voltage exponential waveform; RGK = 100 Ω tgt Gate controlled turn-on ITM = 4 A; VD = VDRM(max); IG = 5 mA; - 2 - µs time dIG/dt = 0.2 A/µs tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 2 A; - 100 - µs turn-off time VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ February 1996 2 Rev 1.100, Ptot / W BT148W Tsp(max) / C 12 ITSM / A BT148W 1 110 conduction form angle factor I degreesaa= 1.57 IT

TSM

0.8 30 460 2.8 1.9 113 T time 90 2.2 120 2.21.9 8 Tj initial = 125 C max 0.6 1.57 116 2.8460.4 119 0.2 122 0 125 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 01 10 100 1000 IF(AV) / A Number of cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak

average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz. ITSM / A BT148W IT(RMS) / A BT134W 1000 2 1.5 10 I IT TSM 0.5 T time Tj initial = 125 C max 10us 100us 1ms 10ms 00.01 0.1 1 10 T / s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state

on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Tsp ≤ 112˚C. IT(RMS) / A BT134W VGT(Tj) 1.2 VGT(25 C) BT151 1.6 112 C 1.4 0.8 1.2 0.6 1 0.4 0.8 0.2 0.6 -50 0 50 100 150 0.4-50 0 50 100 150 Tsp / C Tj / C

Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage

versus solder point temperature Tsp. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996 3 Rev 1.100

, IGT(Tj) IT / A BT148W IGT(25 C) BT14853Tj = 125 C Tj = 25 C 2.5 4 Vo = 1.107 V Rs = 0.14 Ohms231.5 2 typ max 0.500-50 0 50 100 150 0 0.5 1 1.5 2 2.5 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) 100 Zth j-sp (K/W) BT148W IL(25 C) BT145 2.5 10 1.5PtDp1 0.1 0.5t00.01 -50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-sp, versus

versus junction temperature Tj. pulse width tp. IH(Tj) dVD/dt (V/us) IH(25 C) BT145 2.5 RGK = 100 ohms 1.5 1 10 0.501-50 0 50 100 150 0 50 100 150 Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,

versus junction temperature Tj. dVD/dt versus junction temperature Tj.

February 1996 4 Rev 1.100

,

MOUNTING INSTRUCTIONS PRINTED CIRCUIT BOARD

Dimensions in mm. Dimensions in mm. 3.8 36 4.6 4.5 2.3 6.3 (3x) 4.6 7 Fig.13. soldering pattern for surface mounting Fig.14. PCB for thermal resistance and power rating SOT223. for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). February 1996 5 Rev 1.100,

MECHANICAL DATA

Dimensions in mm 6.7 6.3 Net Mass: 0.11gB0.32 3.1 0.24 2.9 0.2MA4A0.10 0.02 3.7 7.3 3.3 6.7 16 13 max123max 1.8 1.05 2.3 0.80 max 0.1 M B0.85 0.60 (4x) 4.6 Fig.15. SOT223 surface mounting package. Notes 1. For further information, refer to surface mounting instructions for SOT223 envelope. 2. Epoxy meets UL94 V0 at 1/8". February 1996 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Rev 1.100]
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