Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope, intended for use in general purpose BT137X- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications, where high voltages sensitivity is required in all four IT(RMS) RMS on-state current888Aquadrants. ITSM Non-repetitive peak on-state 55 55 55 A current

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case 1 main terminal 1 T2 T1 2 main terminal23gate case isolated123G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 VDRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(RMS) RMS on-state current full sine wave; Ths ≤ 73 ˚C - 8 A ITSM Non-repetitive peak full sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 20 ms - 55At= 16.7 ms - 60 A I2t I2t for fusing t = 10 ms - 15 A2s dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. February 1996 1 Rev 1.100,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.5 K/W without heatsink compound - - 6.5 K/W Rth j-a Thermal resistance in free air - 55 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current VD = 12 V; IT = 0.1 A T2+ G+ - 2.5 10 mA T2+ G- - 4.0 10 mA T2- G- - 5.0 10 mA T2- G+ - 11 25 mA IL Latching current VD = 12 V; IGT = 0.1 A T2+ G+ - 3.0 25 mA T2+ G- - 14 35 mA T2- G- - 3.0 25 mA T2- G+ - 4.0 35 mA IH Holding current VD = 12 V; IGT = 0.1 A - 2.5 20 mA VT On-state voltage IT = 10 A - 1.3 1.65 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µs off-state voltage exponential waveform; gate open circuit tgt Gate controlled turn-on VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs; - 2 - µs time ITM = 12 A February 1996 2 Rev 1.100, Ptot / W BT137 Ths(max) / C IT(RMS) / A BT137X 12 71 10 = 180 10 120 80 73C190 8 89 6 30 98 4 107 2 1162012500246810 -50 0 50 100 150 IT(RMS) / A Ths / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,

on-state current, IT(RMS), where α = conduction angle. versus heatsink temperature Ths. ITSM / A BT137 IT(RMS) / A BT137 1000 25 I IT TSM T time 20 Tj initial = 125 C max dI T /dt limit 10 T2- G+ quadrant 10 0 10us 100us 1ms 10ms 100ms 0.01 0.1 1 10 T / s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state

on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Ths ≤ 73˚C. ITSM / A BT137 VGT(Tj) 60 VGT(25 C) BT136 1.6 I IT TSM 1.4 T time 40 Tj initial = 125 C max 1.2 30 1 20 0.8 10 0.6 0 0.4 1 10 100 1000 -50 0 50 100 150 Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage

on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. sinusoidal currents, f = 50 Hz.

February 1996 3 Rev 1.100

, IGT(Tj) IT / A BT137 IGT(25 C) BT137E 25 3 Tj = 125 C T2+ G+ Tj = 25 C T2+ G- max 2.5 20 typ T2- G- Vo = 1.264 VRs = 0.0378 Ohms T2- G+ 2 15 1.5 0.500-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-hs (K/W) BT137 IL(25 C) TRIAC 10 3 with heatsink compound without heatsink compound 2.5 1 unidirectional bidirectional 1.5 0.1Pt1Dp0.5t00.01 -50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-hs, versus

versus junction temperature Tj. pulse width tp. IH(Tj) dVD/dt (V/us)1000 IH(25C) TRIAC 2.5 1.5 1 10 0.501-50 0 50 100 150 0 50 100 150 Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,

versus junction temperature Tj. dVD/dt versus junction temperature Tj.

February 1996 4 Rev 1.100

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MECHANICAL DATA

Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max Recesses (2x) 2.8 2.5 6.4 0.8 max. depth 15.8 15.8 19 seating max max. max. plane 3 max. not tinned 2.5 13.5 min. 1230.4 M 1.0 (2x) 0.6 2.54 0.90.5 0.7 5.08 2.5 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. The improved isolation rating applies only to the SOT186 version A envelope. February 1996 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 6 Rev 1.100]

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