Download: Multi-layer ceramic chip capacitors MCH15 (1005 (0402) size, chip capacitor)

Multi-layer ceramic chip capacitors MCH15 (1005 (0402) size, chip capacitor)

!Features !External dimensions (Units : mm) 1) Small size (1.0 x 0.5 x 0.5 mm) makes it perfect for lightweight portable devices. 2) Comes packed either in tape to enable automatic mounting or in bulk cases. 3) Precise uniformity of shape and dimensions facilitates 1.0 ± 0.05 highly efficient automatic mounting. 4) Barrier layer and end terminations to improve solderability. !Structure 0.1 Min. 0.3 Min. External electrode III (coating layer) Internal electrode External electrode II (barrier layer) External electrode I (thick membrane layer) Ceramic element !Product designation Code Product thickness Packaging specifications Reel Basic ordening unit (pcs.) K 0.5mm Paper tape (width 8 mm, pitch 2 mm) φ180mm (7in.) 10,000 L 0.5mm Paper tape (width 8 mm, pitch 2 mm) φ330mm (13in.) 50,000 C 0.5mm Bulk case - 50,000 Reel (φ180, φ330mm) : compatible with EIAJ ETX-7001 Bulk case: according to EIAJ ET-7201A Part No. Packaging style

MCH155F103ZK

Rated voltage Capacitance-temperature characteristics Nominal Capacitance tolerance Code Voltage Code EIA code Operating temperature (˚C) Temp. coefficient or percent change capacitance Code tolerance 2 25V C ± 0.25pF (0.5 ~ 5pF) 3 16V A C0G -55 to + 125 0 ± 30ppm / ˚C D ± 0.5pF (5.1 ~ 10pF) 5 50V 3-digit designation J ± 5% (11pF or more) according to IEC C X7R -55 to + 125 ± 15% K ± 10% F Y5V -30 to + 85 + 22%, -82% Z + 80%, -20% 0.5 ± 0.05 0.5 ± 0.05, !Capacitance range For thermal compensation Part number MCH15 Part number MCH15 Temperature A Temperature A characteristics (C0G) characteristics (C0G) Capacitance (pF) Capacitance (pF) Rated voltage Rated voltage (V) 50V (V) 50V Tolerance Tolerance 0.5 47 0.75 51 1 56 1.1 62 1.2 68 1.3 75 1.5 82 1.6 91 1.8 100 2 110 2.2 C ( ± 0.25pF) 120 2.4 130 J ( ± 5%) 2.7 150 3 160 3.3 180 3.6 200 3.9 220 4 240 4.3 270 4.7 300 5 330 5.1 360 5.6 390 6 430 6.2 470 6.8 510 7 560 D ( ± 0.5pF) 7.5 8 Product thickness (mm)0.5 ± 0.05 8.2 9.1 22 J ( ± 5%), !Capacitance range High dielectric constant Part number MCH15 Temperature characteristics C (X7R) F (Y5V) Capacitance (pF) Rated voltage (V) 50V 25V 16V 50V 25V 16V Tolerance K ( ±10%) Z ( + 80, – 20%) 1,000 1,200 1,500 1,800 2,200 2,700 3,300 3,900 4,700 5,600 6,800 8,200 10,000 (0.01µF) 12,000 15,000 18,000 22,000 27,000 33,000 39,000 47,000 56,000 68,000 82,000 100,000 (0.1µF) 120,000 150,000 180,000 220,000 270,000 330,000 390,000 470,000 560,000 Product thickness (mm) 0.5 ± 0.05, !Characteristics Class 1 (For thermal compensation) Temperature characteristics Test methods/conditions A (C0G) Item (based on JIS C 5102) Operating temperature -55˚C ~ 125˚C Nominal capacitance (C) Must be within the specified tolerance range. Based on paragraph 7.8 and paragraph 9 Measured at room temperature and standard humidity, 1000pF or less Measurement frequency : 1 ± 0.1MHz Dissipation factor (tanδ) 100/(400+20C)% or less: Less than 30 pF Measurement voltage : 1 ± 0.1Vrms. 0.1% or less: 30 pF or larger Over 1000pF Measurement frequency : 1 ± 0.1kHz Measurement voltage : 1 ± 0.1Vrms. 10,000 MΩ or 500 MΩ ⋅ µF, Based on paragraph 7.6 Insulation resistance (IR) whichever is smaller Measurement is made after rated voltage is applied for 60 ± 5s. Based on paragraph 7.1 Withstanding voltage The insulation must not be damaged. Apply 300% of the rated voltage for 1 to 5s then measure. The temperature coefficients in table 12, paragraph 7.12 are Temperature characteristics Within 0 ± 30ppm/˚C calculated at 20˚C and high temperature. Based on paragraph 8.11. 2. Terminal adherence No detachment or signs of detachment. Apply 5N (0.51 kg ⋅ f) for 10 ± 1s in the Pressure (5N) direction indicated by the arrow. Test board Capacitor Appearance There must be no mechanical damage. Chip is mounted to a board in the manner Resistance to vibration Rate of capacitance change Must be within initial tolerance. shown on the right, subjected to vibration (type A in paragraph 8.2), and measured Board tanδ Must satisfy initial specified value. 24 ± 2 hrs. later. Based on paragraph 8.13 At least 3/4 of the surface of the two terminals Solderability must be covered with new solder. Soldering temperature: 235 ± 5˚C Soldering time : 2 ± 0.5s Rate of capacitance change ± 2.5% or ± 0.25 pF, whichever is larger. Based on paragraph 8.14. Resistance tanδ Must satisfy initial specified value. Soldering temperature: 260 ± 5˚C to soldering Soldering time : 5 ± 0.5s heat 10,000 MΩ or 500 MΩ ⋅ µF, Insulation resistance Preheating : 150 ± 10˚C for 1 to 2 min.whichever is smaller Withstanding voltage The insulation must not be damaged. Rate of capacitance change ± 2.5% or ± 0.25 pF, whichever is larger. Temperature Based on paragraph 9.3 cycling tanδ Must satisfy initial specified value. Number of cycles: 10 Capacitance measured after 24 ± 2 hrs. 10,000 MΩ or 500 MΩ ⋅ µF, Insulation resistance whichever is smaller Appearance There must be no mechanical damage. Based on paragraph 9.9 Rate of capacitance change ± 7.5% or ± 0.75 pF, whichever is larger. Test temperature: 40 ± 2˚C Humidity load Relative humidity: 90% to 95% test tanδ 0.5% or less Applied voltage : rated voltage Test time : 500 to 524 hrs. 500 MΩ or 25 MΩ ⋅ µF, Capacitance measured after 24 ± 2 hrs. Insulation resistance whichever is smaller Appearance There must be no mechanical damage. Based on paragraph 9.10 High- Rate of capacitance change ± 3.0% or ± 0.3 pF, whichever is larger. Test temperature : Max. operating temp. temperature Applied voltage : rated voltage x 200% load test tanδ 0.3% or less Test time : 1,000 to 1,048 hrs. Capacitance measured after 24 ± 2 hrs. Insulation resistance 1,000 MΩ or 50 MΩ ⋅ µF, whichever is smaller, !Characteristics Class 2 (High dielectric constant) Temperature characteristics Test methods/conditions C (X7R) F (Y5V) (based on JIS C 5102) Item Operating temperature -55˚C ~ + 125˚C -30˚C ~ + 85˚C Nominal capacitance (C) Must be within the specified tolerance range. Based on paragraph 7.8 Measured at room temperature and standard humidity, 2.5% or less 5.0% or less Measurement frequency: 1 ± 0.1 kHz Tanδ (when rated voltage is 16V: 3.5% or less) (when rated voltage is 16V: 7.5% or less) Measurement voltage : 1.0 ± 0.2 Vrms. Based on paragraph 7.6 Insulation resistance (IR) 10,000 MΩ or 500 MΩ ⋅ µF, whichever is smaller Measurement is made after rated voltage is applied for 60 ± 5s. Based on paragraph 7.1 Withstanding voltage The insulation must not be damaged. Apply 250% of the rated voltage for 1 to 5s then measure. The temperature coefficients in paragraph 7.12, Temperature characteristics Within ± 15% + 22, + 82% table 8, condition B, are based on measurements carried out at 20˚C, with no voltage applied. Based on paragraph 8. 11. 2. Terminal adherence No detachment or signs of detachment Apply 5N (0.51 kg ⋅ f) for 10 ± 1s in the direction indicated Pressure (5N) Test board by the arrow. Capacitor Appearance There must be no mechanical damage. Chip is mounted to a board in the Resistance manner shown on the right, subjected to vibration Rate of capacitance change Must be within initial tolerance. to vibration (type A in paragraph 8.2), Dissipation factor Must satisfy initial specified value. and measured 48 ± 4 hrs. later. Board Based on paragraph 8. 13 Solderability At least 3/4 of the surface of the two terminals must be covered with new solder. Soldering temperature: 235 ± 5˚C Soldering time : 2 ± 0.5s Rate of capacitance change Within ± 5.0% Within ± 20.0% Resistance Based on paragraph 8. 14. to soldering Dissipation factor Must satisfy initial specified value. Soldering temperature: 260 ± 5˚C heat Soldering time : 5 ± 0.5s Insulation resistance 10,000 MΩ or 500 MΩ ⋅ µF, whichever is smaller Preheating : 150 ± 10˚C for 1 to 2 min. Withstanding voltage The insulation must not be damaged. Temperature Rate of capacitance change Within ± 7.5% Within ± 20.0% Based on paragraph 9.3 Number of cycles: 10 cycling Dissipation factor Must satisfy initial specified value. Capacitance measured after 48 ± 4 hrs. Insulation resistance 10,000 MΩ or 500 MΩ ⋅ µF, whichever is smaller Based on paragraph 9.9 Rate of capacitance change ± 12.5% or less Within ± 30.0% Test temperature: 40 ± 2˚C Relative humidity: 90% to 95% Humidity load 7.5% or less Dissipation factor 5.0% or less Applied voltage : rated voltage test (when rated voltage is 16V: 10.0%) Test time : 500 to 524 hrs. Capacitance measured after 48 ± 4 hrs. Insulation resistance 500 MΩ or 25 MΩ ⋅ µF, whichever is smaller Appearance There must be no mechanical damage. Rate of capacitance change Within ± 10.0% Within ± 30.0% Based on paragraph 9.10 High- Test temperature: Max. operating temp. temperature 7.5% or less Dissipation factor 5.0% or less Applied voltage : rated voltage x 200% load test (when rated voltage is 16V: 10.0%) Test time : 1,000 to 1,048 hrs. Capacitance measured after 48 ± 4 hrs. Insulation resistance 1,000MΩ or 50 MΩ ⋅ µF, whichever is smaller, !Packaging specifications (Unit: mm)

Taping Reel

φ180 mm plastic reel 11.4 ± 1.0 + 0.1 4.0 ± 0.1 φ1.5 0 0.7 ± 0.05 2.0 ± 0.05 Label position φ330 mm plastic reel 0.65 ± 0.1 13.5 ± 1.0 0.8Max. Pull direction (Paper taping) Label position EIAJ ETX-7001 compliant

Bulk case

slider shutter EIAJ ET-7201 A compliant MCH15 50,000pcs/case 1.15 ± 0.1 3.5 ± 0.05 1.75 ± 0.1 8.0 ± 0.3 9.5 ± 0.5 φ13 ± 0.2 φ13 ± 0.2 9.0 ± 0.3 φ80 ± 1 φ 60+ 1 0 φ330 ± 2 φ180 0– 3, !Electrical characteristics !A (C0G) Characteristics 5 1000000 2 10000 1 1000 0 1pF – 1 – 2 10pF10 – 3 1 100pF – 4 – 5 0.1 – 50 0 50 100 1 10 100 1000 10000 TEMPERATURE (°C) FREQUENCY (MHz) Fig.1 Capacitance-temperature Fig.2 Impedance-frequency characteristics characteristics !C (X7R) Characteristics 30 10000 10 1000 ∆C / C – 10 – 20 – 30 1,000pF 0.1 15 10,000pF 10 0.01 tanδ500.001 – 50 0 50 100 1 10 100 1000 10000 TEMPERATURE: (°C) FREQUENCY (MHz) Fig.3 Capacitance-temperature Fig.4 Impedance-frequency characteristics characteristics !F (Y5V) Characteristics 10 1000 0 ∆C / C – 10 100 – 20 – 30 – 40 16 – 50 14 – 60 12 1 1,000pF – 70 10 Tanδ – 80 8 0.1 10,000pF – 90640.01 100,000pF 0 0.001 – 40 – 20 0 20 40 60 80 100 1 10 100 1000 10000 TEMPERATURE: (°C) FREQUENCY (MHz) Fig.5 Capacitance-temperature Fig.6 Impedance-frequency characteristics characteristics RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) Tanδ (%) Tanδ (%) IMPEDANCE (Ω) IMPEDANCE (Ω) IMPEDANCE (Ω), !Temperature cycling test

A (C0G) Characteristics (100pF)

3.0 JIS C 5102 9. 3 0.6 JIS C 5102 9. 3 SAMPLE SIZE: n = 50pcs JIS C 5102 9. 3SAMPLE SIZE: n = 50pcs – 55/ + 125°C 100cyc SAMPLE SIZE: n = 50pcs 2.0 – 55/ + 125°C 100cyc0.5 – 55/ + 125°C 100cyc 1 × 1012 1.0 0.4 0 0.3 1 × 1011 – 1.0 0.2 – 2.0 0.1 – 3.001× 1010 INITIAL VALUE TESTED INITIAL VALUE TESTED INITIAL VALUE TESTED

Fig.7 Rate of capacitance change Fig.8 Tanδ Fig.9 Insulation resistance C (X7R) Characteristics (1,000pF)

15.0 JIS C 5102 9. 3 6.0 JIS C 5102 9. 3 SAMPLE SIZE: n = 50pcs JIS C 5102 9. 3SAMPLE SIZE: n = 50pcs – 55/ + 125°C 100cyc SAMPLE SIZE: n = 50pcs 10.0 – 55/ + 125°C 100cyc5.0 – 55/ + 125°C 100cyc 1 × 1012 5.0 4.0 0 3.0 1 × 1011 – 5.0 2.0 – 10.0 1.0 – 15.001× 1010 INITIAL VALUE TESTED INITIAL VALUE TESTED INITIAL VALUE TESTED

Fig.10 Rate of capacitance change Fig.11 Tanδ Fig.12 Insulation resistance F (Y5V) Characteristics (10,000pF)

30.0 6.0 JIS C 5102 9. 3 JIS C 5102 9. 3 SAMPLE SIZE: n = 50pcs JIS C 5102 9. 3SAMPLE SIZE: n = 50pcs – 30/ + 85°C 100cyc – 30/ + 85°C 100cyc SAMPLE SIZE: n = 50pcs 20.0 5.0 – 30/ + 85°C 100cyc 1 × 1012 10.0 4.0 0.0 3.0 1 × 1011 – 10.0 2.0 – 20.0 1.0 – 30.001× 1010 INITIAL VALUE TESTED INITIAL VALUE TESTED INITIAL VALUE TESTED

Fig.13 Rate of capacitance change Fig.14 Tanδ Fig.15 Insulation resistance

RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) Tanδ: (%) Tanδ: (%)Tanδ: (%) IIR: (Ω) IR: (Ω) IR: (Ω), !High-temperature load test

A (C0G) Characteristics (100pF)

3.0 0.6 JIS C 5102 9. 10 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 2.0 + 125°C 1,000h 0.5 + 125°C 1,000h OVERLOAD: 200% RATED VOLTAGE OVERLOAD: 200% RATED VOLTAGE 1 × 1012 1.0 0.4 0.0 0.3 1 × 1011 – 1.0 0.2 JIS C 5102 9. 10 – 2.0 0.1 SAMPLE SIZE: n = 50pcs + 125°C 1,000h OVERLOAD: 200% RATED VOLTAGE – 3.001× 1010 0 240 420 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.16 Rate of capacitance change Fig.17 Tanδ Fig.18 Insulation resistance C (X7R) Characteristics (1,000pF)

15.0 6.0 JIS C 5102 9. 10 JIS C 5102 9. 10 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 10.0 + 125°C 1,000h + 125°C 1,000h5.0 + 125°C 1,000h OVERLOAD: 200% RATED VOLTAGE OVERLOAD: 200% RATED VOLTAGE × 12 OVERLOAD: 200% RATED VOLTAGE1 10 5.0 4.0 0 3.0 1 × 1011 – 5.0 2.0 – 10.0 1.0 – 15.001× 1010 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.19 Rate of capacitance change Fig.20 Tanδ Fig.21 Insulation resistance F (Y5V) Characteristics (10,000pF)

30.0 6.0 JIS C 5102 9. 10 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 20.0 + 85°C 1,000h 5.0 + 85¡C 1,000h OVERLOAD: 200% RATED VOLTAGE × 12 OVERLOAD: 200% RATED VOLTAGE1 10 10.0 4.0 0.0 3.0 1 × 1011 – 10.0 2.0 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs – 20.0 1.0 + 85°C 1,000h OVERLOAD: 200% RATED VOLTAGE – 30.001× 1010 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.22 Rate of capacitance change Fig.23 Tanδ Fig.24 Insulation resistance

RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) Tanδ: (%) Tanδ: (%) Tanδ: (%) IR: (Ω) IR: (Ω) IR: (Ω), !Humidity load test

A (C0G) Characteristics (100pF)

3.0 0.6 JIS C 5102 9. 9 JIS C 5102 9. 9 JIS C 5102 9. 9 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs + 40°C 90 ~ 95%RH 1,000h 2.0 + 40°C 90 ~ 95%RH 1,000h 0.5 + 40°C 90 ~ 95%RH 1,000h OVERLOAD: THE RATED VOLTAGE12 OVERLOAD: THE RATED VOLTAGE OVERLOAD: THE RATED VOLTAGE 1 × 10 1.0 0.4 0.0 0.3 0.2 1 × 10 – 1.0 – 2.0 0.1 – 3.001× 10 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.25 Rate of capacitance change Fig.26 Tanδ Fig.27 Insulation resistance C (X7R) Characteristics (1,000pF)

15.0 6.0 JIS C 5102 9. 9 JIS C 5102 9. 9 JIS C 5102 9. 9 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 10.0 + 40°C 90 ~ 95%RH 1,000h 5.0 + 40°C 90 ~ 95%RH 1,000h + 40°C 90 ~ 95%RH 1,000h OVERLOAD: THE RATED VOLTAGE OVERLOAD: THE RATED VOLTAGE 12 OVERLOAD: THE RATED VOLTAGE1 × 10 5.0 4.0 0 3.0 1 × 1011 – 5.0 2.0 – 10.0 1.0 – 15.001× 1010 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.28 Rate of capacitance change Fig.29 Tanδ Fig.30 Insulation resistance F (Y5V) Characteristics (10,000pF)

30.0 6.0 JIS C 5102 9. 9 JIS C 5102 9. 9 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 20.0 + 40°C 90 ~ 95%RH 1,000h 5.0 + 40°C 90 ~ 95%RH 1,000h OVERLOAD: THE RATED VOLTAGE 1 × 1012 OVERLOAD: THE RATED VOLTAGE 10.0 4.0 0.0 3.0 1 × 1011 – 10.0 2.0 JIS C 5102 9. 9 SAMPLE SIZE: n = 50pcs – 20.0 1.0 + 40°C 90 ~ 95%RH 1,000h OVERLOAD: THE RATED VOLTAGE – 30.001× 1010 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.31 Rate of capacitance change Fig.32 Tanδ Fig.33 Insulation resistance

RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) Tanδ: (%) Tanδ: (%) Tanδ: (%) IR: (Ω) IR: (Ω) IR: (Ω)]

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