Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT137- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These devices IT(RMS) RMS on-state current88Aare intended to be interfaced directly ITSM Non-repetitive peak on-state current 55 55 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab 1 main terminal 1 ...
Author: Yasmin Holden Shared: 8/19/19
Downloads: 508 Views: 1036

Content

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT137- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These devices IT(RMS) RMS on-state current88Aare intended to be interfaced directly ITSM Non-repetitive peak on-state current 55 55 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 main terminal 1 T2 T1 2 main terminal23gate tab main terminal2123G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 VDRM Repetitive peak off-state - 500 1 6001 V voltages IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 ˚C - 8 A ITSM Non-repetitive peak full sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied VDRM(max) t = 20 ms - 55At= 16.7 ms - 60 A I2t I2t for fusing t = 10 ms - 15 A2s dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. February 1996 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance full cycle - - 2.0 K/W junction to mounting base half cycle - - 2.4 K/W Rth j-a Thermal resistance in free air - 60 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current VD = 12 V; IT = 0.1 A T2+ G+ - 2.5 5 mA T2+ G- - 3.5 5 mA T2- G- - 3.5 5 mA T2- G+ - 6.5 10 mA IL Latching current VD = 12 V; IGT = 0.1 A T2+ G+ - 1.6 15 mA T2+ G- - 8.5 20 mA T2- G- - 1.2 15 mA T2- G+ - 2.5 20 mA IH Holding current VD = 12 V; IGT = 0.1 A - 1.5 10 mA VT On-state voltage IT = 10 A - 1.3 1.65 V VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 5 - V/µs off-state voltage exponential waveform; RGK = 1 kΩ tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dIG/dt = 5 A/µs February 1996 2 Rev 1.100, Ptot / W BT137 Tmb(max) / C IT(RMS) / A BT137 12 101 10 = 180 10 120 105 102 C8 1 90 8 109 606630 113 4 117 2 1212012500246810 -50 0 50 100 150 IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,

on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb. ITSM / A BT137 IT(RMS) / A BT137 1000 25 I IT TSM T time 20 Tj initial = 125 C max dI T /dt limit 10 T2- G+ quadrant 10 0 10us 100us 1ms 10ms 100ms 0.01 0.1 1 10 T / s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state

on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 102˚C. ITSM / A BT137 VGT(Tj) 60 VGT(25 C) BT136 1.6 I IT TSM 1.4 T time 40 Tj initial = 125 C max 1.2 30 1 20 0.8 10 0.6 0 0.4 1 10 100 1000 -50 0 50 100 150 Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage

on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. sinusoidal currents, f = 50 Hz.

February 1996 3 Rev 1.100

, IGT(Tj) IT / A BT137 IGT(25 C) BT137D 25 3 Tj = 125 C T2+ G+ Tj = 25 C T2+ G- max 2.5 20 typ T2- G- Vo = 1.264 VRs = 0.0378 Ohms T2- G+ 2 15 1.5 0.500-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic. IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT137 IL(25 C) TRIAC 10 2.5 unidirectional 1 bidirectional 1.5 0.1Ptp1D0.5t00.01 -50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus

versus junction temperature Tj. pulse width tp. IH(Tj) dVD/dt (V/us)1000 IH(25C) TRIAC 2.5 1.5 1 10 0.501-50 0 50 100 150 0 50 100 150 Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,

versus junction temperature Tj. dVD/dt versus junction temperature Tj.

February 1996 4 Rev 1.100

, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1996 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 6 Rev 1.100]
15

Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT137- 500 600 800 bidirectional transient and blocking BT137- 500F 600F 800F voltage capability and high thermal BT137- 500G 6
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. APPLICATIONS 3 ■ HORIZONTAL DEFLECTION FOR COLOUR 1 TV DESCR
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH315 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR 3 TV 1 ■ SWITCH MODE POWER SUPPLIES ISOWATT218 DESCRIPTION The B
MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR
® BU810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON ■ LOW BASE-DRIVE REQUIREMENTS ■ FAST SWITCHING SPEED ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 ■ HORIZONTAL DEFLECTION FOR 2 MONOCHROME TVs ■ GENERAL PURPO
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE ■ HIGH VOLTAGE CAPABILITY ( > 1400 V ) ■ HIGH DC CURRENT GAIN ( TYP. 150 ) ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector cu
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional to
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collec
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDIT
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE D
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMB
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations re
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARA
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX.
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collec
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resu