Download: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. APPLICATIONS 3 ■ HORIZONTAL DEFLECTION FOR COLOUR 1 TV DESCRIPTION ISOWATT218 The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC...
Author: Yasmin Holden Shared: 8/19/19
Downloads: 1341 Views: 3019

Content

BUH315D

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ STMicroelectronics PREFERRED

SALESTYPE

■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. APPLICATIONS 3 ■ HORIZONTAL DEFLECTION FOR COLOUR 1

TV

DESCRIPTION ISOWATT218 The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 1500 V VCEO Collector-Emit ter Voltage (IB = 0) 700 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current6AICM Collector Peak Current (tp < 5 ms) 12 A IB Base Current3AIBM Base Peak Current (tp < 5 ms) 5 A Ptot Total Dissipation at Tc = 25 oC 44 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC August 2001 1/7,

THERMAL DATA

R Thermal Resistance Junction-case Max 2.8 othj-ca se C/W

ELECTRICAL CHARACTERISTICS (T ocase = 25 C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 1500 V 200 µA Current (VBE = 0) IEBO Emitter Cut-off Current VEB = 5 V 110 300 mA (IC = 0) VCE(sat )∗ Collector-Emit ter IC = 3 A IB = 1 A 1.5 V Saturat ion Voltage VBE(s at)∗ Base-Emitter IC = 3 A IB = 1 A 1.5 V Saturat ion Voltage hFE∗ DC Current Gain IC = 3 A VCE = 5V49IC = 3 A VCE = 5 V Tj = 100 oC 2.5 RESISTIVE LOAD VCC = 400 V IC = 3 A ts Storage Time IB1 = 1 A IB2 = -1.5 A 1.8 2.7 µs tf Fall Time 200 300 ns INDUCTIVE LOAD IC = 3Af= 15625 Hz ts Storage Time IB(e nd) = 0.67 A LC = 1.3 mH 2.5 6 µs tf Fall Time Csnub = 9.1 nF Lbb(o ff ) = 8 µH 400 500 ns VBE(of f) = -4V VCC = 150 V Duty Cycle =40% VF Diode Forward Voltage IF = 3 A 2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

2/7, Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7, Switching Time Resistive Load at 16 KHz BASE DRIVE INFORMATION In order to saturate the power switch and reduce Inductance L1 serves to control the slope of the conduction losses, adequate direct base current negative base current IB2 to recombine the IB1 has to be provided for the lowest gain hFE at excess carrier in the collector when base current 100 oC (line scan phase). On the other hand, is still present, this would avoid any tailing negative base current IB2 must be provided to turn phenomenon in the collector current. off the power transistor (retrace phase). The values of L and C are calculated from the Most of the dissipation, in the deflection following equations: application, occurs at switch-off. Therefore it is1212essential to determine the value of IB2 which L (IC) = C (VCEfly)2 2 minimizes power losses, fall time tf and, 1 consequently, Tj. A new set of curves have been ω = 2 πf = √LC defined to give total power losses, ts and tf as a function of I at 16 KHz scanning frequencies the Where IC= operating collector current, VB2 CEfly= optimum negative drive. The test circuit is flyback voltage, f= frequency of oscillation during illustrated in fig. 1. retrace. 4/7, Figure 1: InductiveLoad Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7,

ISOWATT218 MECHANICAL DATA

DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638L90.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 6/7, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7]
15

Similar documents

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH315 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR 3 TV 1 ■ SWITCH MODE POWER SUPPLIES ISOWATT218 DESCRIPTION The B
MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR
® BU810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON ■ LOW BASE-DRIVE REQUIREMENTS ■ FAST SWITCHING SPEED ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 ■ HORIZONTAL DEFLECTION FOR 2 MONOCHROME TVs ■ GENERAL PURPO
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE ■ HIGH VOLTAGE CAPABILITY ( > 1400 V ) ■ HIGH DC CURRENT GAIN ( TYP. 150 ) ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector cu
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional to
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collec
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDIT
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE D
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMB
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations re
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARA
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX.
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collec
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resu
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive