Download: HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE ■ HIGH VOLTAGE CAPABILITY ( > 1400 V ) ■ HIGH DC CURRENT GAIN ( TYP. 150 ) ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ LOW BASE-DRIVE REQUIREMENTS 32 ■ DEDICATED APPLICATION NOTE AN1184 1 APPLICATIONS ■ COST EFFECTIVE SOLUTION FOR ISOWATT218 HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using INTERNAL SC...
Author: Yasmin Holden Shared: 8/19/19
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Content

BU808DFI

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

■ STMicroelectronics PREFERRED

SALESTYPE

■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE ■ HIGH VOLTAGE CAPABILITY ( > 1400 V ) ■ HIGH DC CURRENT GAIN ( TYP. 150 ) ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ LOW BASE-DRIVE REQUIREMENTS 32 ■ DEDICATED APPLICATION NOTE AN1184 1

APPLICATIONS

■ COST EFFECTIVE SOLUTION FOR ISOWATT218 HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.

DESCRIPTION

The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using INTERNAL SCHEMATIC DIAGRAM Multiepitaxial Mesa technology for cost-effective high performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 1400 V VCEO Collector-Emit ter Voltage (IB = 0) 700 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current8AICM Collector Peak Current (tp < 5 ms) 10 A IB Base Current3AIBM Base Peak Current (tp < 5 ms) 6 A Ptot Total Dissipation at Tc = 25 oC 52 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC June 2000 1/7,

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case Max 2.4 oC/W

ELECTRICAL CHARACTERISTICS (T ocase = 25 C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 1400 V 400 µA Current (VBE = 0) IEBO Emitter Cut-of f Current VEB = 5 V 100 mA (IC = 0) VCE(sat )∗ Collector-Emit ter IC = 5 A IB = 0.5 A 1.6 V Saturation Voltage VBE(s at)∗ Base-Emitter IC = 5 A IB = 0.5 A 2.1 V Saturation Voltage hF E∗ DC Current Gain IC = 5 A VCE = 5 V 60 230 I oC = 5 A VCE = 5 V Tj = 100 C 20 INDUCTIVE LOAD VCC = 150 V IC = 5 A ts Storage Time IB1 = 0.5 A VBEoff = -5V3µs tf Fall Time 0.8 µs INDUCTIVE LOAD VCC = 150 V IC = 5 A ts Storage Time IB1 = 0.5 A VBEoff = -5V2µs tf Fall Time Tj = 100 oC 0.8 µs VF Diode Forward Voltage IF = 5A3V∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

2/7, Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time InductiveLoad at 16KHz 3/7, Switching Time Inductive Load at 16KHZ Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce drive. The test circuit is illustrated in figure 1. conduction losses, adequate direct base current Inductance L1 serves to control the slope of the IB1 has to be provided for the lowest gain hFE at negative base current IB2 to recombine the 100 oC (line scan phase). On the other hand, excess carrier in the collector when base current negative base current IB2 must be provided to is still present, this would avoid any tailing turn off the power transistor (retrace phase). phenomenon in the collector current. Most of the dissipation, in the deflection The values of L and C are calculated from the application, occurs at switch-off. Therefore it is following equations: essential to determine the value of IB2 which12121minimizes power losses, fall time tf and, L (I ) = C (V ) ω = 2 πf =2C2CEfly √LC consequently, Tj. A new set of curves have been defined to give total power losses, t and t as a Where IC= operating collector current, VCEfly=s f function of IB2 at both 16 KHz scanning flyback voltage, f= frequency of oscillation during frequencies for choosing the optimum negative retrace. 4/7, Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7,

ISOWATT218 MECHANICAL DATA

DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638L90.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 6/7, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7]
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