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GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 8 A ICM Collector c...
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GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 4 A; IB = 1 A - 3.0 V ICsat Collector saturation current f = 16kHz 4 - A f = 56kHz 4 - A tf Fall time ICsat = 4 A; f = 16kHz 0.3 0.45 µs ICsat = 4 A; f = 56kHz 0.21 - µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A -IBM Reverse base current peak value 1 - 5 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -55 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W 1 Turn-off current. August 1998 1 Rev 1.100,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 6 V; IC = 0 A - - 100 µA VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V L = 25 mH BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEsat Collector-emitter saturation voltages IC = 4 A; IB = 1 A - - 3.0 V VBEsat Base-emitter saturation voltage IC = 4 A; IB = 1 A 0.84 0.92 1.01 V hFE DC current gain IC = 100 mA; VCE = 5 V - 12 - hFE IC = 4 A; VCE = 5 V 4.2 5.7 7.3

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 68 - pF Switching times (16 kHz line ICsat = 4.0 A;IB1 = 0.8 A deflection circuit) (IB2 = -2.0 A) ts Turn-off storage time 3.8 4.6 µs tf Turn-off fall time 0.30 0.45 µs Switching times (56 kHz line ICsat = 4.0 A;IB1 = 0.8 A deflection circuit) (IB2 = -2.1 A) ts Turn-off storage time 2.4 - µs tf Turn-off fall time 0.21 - µs 2 Measured with half sine-wave voltage (curve tracer). August 1998 2 Rev 1.100, ICsat + 50v 90 % 100-200R

IC

10 % Horizontal tf t Oscilloscope ts

IB

Vertical IB1 100R 1R t 6V 30-60 Hz - IB2

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions.

IC / mA + 150 v nominal adjust for ICsat Lc LB T.U.T. 100 IBend Cfb 0 -VBB VCE / V min VCEOsust

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit.

ICsat TRANSISTOR hFE BU4507 1V100 IC DIODE VCE = 1V Ths = 25CtThs = 85 C IB IB1 t 10 20us 26us IB2 64us

VCE

t 0.001 0.01 0.1 1 IC / A 10

Fig.3. Switching times waveforms (16 kHz). Fig.6. High and low DC current gain. August 1998 3 Rev 1.100

, hFE BU4507AF 100 VCEsat / V BU4507AF/X/Z10 VCE = 5V Ths = 25 C Ths = 25 C Ths = 85 C Ths = 85 C IC/IB = 5 0.1 0.001 0.01 0.1 1 10 0.01 IC / A 0.1 1 10 IC / A 100

Fig.7. High and low DC current gain. Fig.10. Typical collector-emitter saturation voltage.

VBEsat / V BU4507AF/X/Z 1.2

VCC

Ths = 25 C Ths = 85 C 1.1

LC

0.9

VCL

IBend LB 0.8 IC = 4 A

CFB

-VBB T.U.T. 0.7 0.6 0 0.5 1 1.5 2 2.5 IB / A 3

Fig.8. Test Circuit RBSOA. Fig.11. Typical base-emitter saturation voltage.

IC / A ts/tf / usBU2507 10 30 ICsat = 4 A Ths = 85 C Freq = 16 kHz ts 1042tf 100 1000 1500 VCE / V 0 0.5 1 1.5 2 2.5 IB / A 3

Fig.9. Reverse bias safe operating area. Tj ≤ Tjmax Fig.12. Typical collector storage and fall time. IC =4 A; Tj = 85˚C; f = 16kHz August 1998 4 Rev 1.100

, 120 PD% Normalised Power Derating Zth K/W BU4507AF with heatsink compound 90 0.51 80 0.2 70 0.1 60 0.050.1 50 0.02 0.01 P pDtD= tp 20 T 1000Tt020 40 60 80 100 120 140 0.0011.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E+01 Ths / C t / s

Fig.13. Normalised power dissipation. Fig.14. Transient thermal impedance. PD% = 100⋅PD/PD 25˚C August 1998 5 Rev 1.100

, MECHANICAL DATA Dimensions in mm 5.8 max Net Mass: 5.88 g 16.0 max 0.7 3.0 4.5 3.3 10.0 27 25 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 4.5 min 1.1 0.4 M 0.9 max 5.45 5.45 3.3 Fig.15. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1998 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Rev 1.100]
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