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GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage I...
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GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - 1.0 V ICsat Collector saturation current 5.0 - A ts Storage time ICM = 5.0 A; IB(end) = 0.9 A 2.2 tbf µs

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabc1base 2 collectorb3emitter tab collector123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A IB Base current (DC) - 12 A IBM Base current peak value - 25 A -IB(AV) Reverse base current average over any 20 ms period - 200 mA -IBM Reverse base current peak value 1 - 25 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

ESD LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV 1.5 kΩ) 1 Turn-off current. December 1995 1 Rev 1.000,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - - 1.0 K/W Rth j-a Junction to ambient in free air 45 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 5.0 A; IB = 0.91 A 0.78 0.86 0.95 V hFE DC current gain IC = 0.1 A; VCE = 5 V 12 22 35 hFE IC = 5 A; VCE = 1 V 5.5 8 11

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (64 kHz line ICM = 5.0 A; LC = 260 µH; Cfb = 4.8 nF; deflection circuit) VCC = 180 V; IB(end) = 0.9 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A/µs) ts Turn-off storage time 2.2 tbf µs tf Turn-off fall time tbf tbf µs IC / mA + 50v 100-200R Horizontal 200 Oscilloscope Vertical 100 100R 1R 6V VCE / V min 30-60 Hz VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). December 1995 2 Rev 1.000, TRANSISTOR I CM + 150 v nominalICadjust for ICMDIODE t LcIBIBendt5us 6.5 us IBend LB T.U.T. BY228 Cfb 16 us VC E -VBB t Fig.3. Switching times waveforms (64 kHz). Fig.5. Switching times test circuit. ICM hFE BU2727A/AF 90 % 100 VCE = 5 V Tmb = 25 C Tmb = 85 C

IC

10 % tf 10t ts

IB

IBend t 0.01 0.1 1 10 100 - IBM IC / A Fig.4. Switching times definitions. Fig.6. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) December 1995 3 Rev 1.000, hFE BU2727A/AF PD% Normalised Power Derating120 VCE = 1 V Tmb = 25 C 110 Tmb = 85 C 100 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 IC / A Tmb / C

Fig.7. DC current gain. hFE = f (IC) Fig.10. Normalised power dissipation. Parameter Tmb PD% = 100⋅PD/PD 25˚C = f (Tmb)

(Low and high gain) VCEsat / V BU2727A/AF Zth / (K/W) BU2525A10 Tmb = 85 C Tmb = 25 C 0.5 0.2 0.1 0.1 IC/IB = 12 0.05 IC/IB = 5 0.02 0.1 P tp tp 0.01DD= T D = 0Tt0.001 0.01 1E-06 1E-04 1E-02 1E+00 0.1 1 10 100 IC / A t / s

Fig.8. Typical collector-emitter saturation voltage. Fig.11. Transient thermal impedance. VCEsat = f (IC); parameter IC/IB Zth j-mb = f(t); parameter D = tp/T

VBEsat / V BU2727A/AF IC = 6 A 0.9 0.84ATmb = 85 C 0.7 Tmb = 25 C 0.601234IB / A

Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC December 1995 4 Rev 1.000

, VCC IC / A BU2727A/AF/D/DF

LC

Area where 20 fails occur

VCL

IBend 15LB

CFB

-VBB T.U.T. 100 1000 1700 Fig.12. Test Circuit RBSOA. VCE / V VCC = 150 V; -VBB = 1 - 4 V; Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A December 1995 5 Rev 1.000,

MECHANICAL DATA

Dimensions in mm 15.2 Net Mass: 5 g max14 13.6 4.6 max 2 max 4.25 4.15 2 4.4 max 12.7 max 2.2 max 0.5 dimensions within min 13.6 this zone are min uncontrolled1235.5 0.5 M 0.4 1.15 0.95 1.6 Fig.14. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1995 6 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1995 7 Rev 1.000]
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