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GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-em...
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GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.0 A - 1.0 V ICsat Collector saturation current 4.5 - A ts Storage time ICM = 4.5 A; IB(end) = 1.0 A 2.9 3.5 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c case 1 base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A IB Base current (DC) - 10 A IBM Base current peak value - 20 A -IB(AV) Reverse base current average over any 20 ms period - 150 mA -IBM Reverse base current peak value 1 - 20 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

ESD LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV 1.5 kΩ) 1 Turn-off current. March 1996 1 Rev 1.000,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 900 - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.0 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.0 A 0.79 0.87 0.96 V hFE DC current gain IC = 100 mA; VCE = 5 V 12 22 35 hFE IC = 4.5 A; VCE = 1 V 4.5 7 10

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (64 kHz line ICM = 4.5 A; LC = 300 µH; Cfb = 2.5 nF; deflection circuit) VCC = 160 V; IB(end) = 1.0 A; LB = 2.0 µH; -VBB = 4 V; -IBM = 2.7 A ts Turn-off storage time 2.9 3.5 µs tf Turn-off fall time 0.19 0.25 µs 2 Measured with half sine-wave voltage (curve tracer). March 1996 2 Rev 1.000,

ICM

+ 50v 90 % 100-200R

IC

10 % Horizontal tf t Oscilloscope ts

IB

Vertical IBend 100R 1R t 6V 30-60 Hz - IBM

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions.

IC / mA + 150 v nominal adjust for ICM Lc IBend LB T.U.T.100 BY228Cfb 0 -VBB VCE / V min VCEOsust

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit.

TRANSISTOR ICM hFE BU2720/22AF I 100C DIODE VCE = 5 V Ths = 25 C Ths = 85CtIBIBend t 10 5 us 6.5 us 16 us VCEt0.01 0.1 1 10 IC / A 100

Fig.3. Switching times waveforms (64 kHz). Fig.6. DC current gain. hFE = f (IC) Parameter Ths

(Low and high gain)

March 1996 3 Rev 1.000

, Normalised Power Derating hFE BU2720/22AF 120 PD% 100 with heatsink compound VCE = 1 V Ths = 25 C 110 Ths = 85 C 1001020 40 60 80 100 120 140 0.01 0.1 1 10 IC / A 100 Ths / C

Fig.7. DC current gain. hFE = f (IC) Fig.10. Normalised power dissipation. Parameter Ths PD% = 100⋅PD/PD 25˚C = f (Ths)

(Low and high gain) VCEsat / V BU2722AF Zth / (K/W)10 Tj = 85 C Tj = 25 C 0.5 0.2 1 0.1 0.05 0.1 IC/IB = 8 0.02 IC/IB = 4 0.1 tp 0.01 P tpD D = T D = 0Tt0.001 0.01 1E-06 1E-04 1E-02 1E+00 0.1 1 10 100 IC / A t / s

Fig.8. Typical collector-emitter saturation voltage. Fig.11. Transient thermal impedance. VCEsat = f (IC); parameter IC/IB Zth j-hs = f(t); parameter D = tp/T

VBEsat / V BU2722AF ts, tf / us BU2722AF 1 10 Tj = 85 C Tj = 25 C IC = 5.5 A 0.9 0.8 1 4.5 A 0.7 0.6 0.1 0 0.5 1 1.5201234IB / A IB / A

Fig.9. Typical base-emitter saturation voltage. Fig.12. Typical storage and fall time. VBEsat = f (IB); parameter IC ts = f(IB); tf = f(IB); IC = 4.5 A; f = 64 kHz; Ths = 85 ˚C March 1996 4 Rev 1.000

, Ptot / W BU2722AF IC / A BU2720AF/DF 100 26 Ths = 85 C 24 Ths = 25 C 22 18 Area where 16 fails occur 10 121001234100 1000 1700 IB / A VCE / V Fig.13. Typical power dissipation. Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax Ptot = f(IB); IC = 4.5 A; f = 64 kHz; Parameter Ths

VCC LC VCL

IBend LB

CFB

-VBB T.U.T. Fig.14. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH; CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A March 1996 5 Rev 1.000, MECHANICAL DATA Dimensions in mm 15.3 max 5.2 max Net Mass: 5.5 g 0.7 3.1 7.3 3.3 3.2 o 6.2 45 5.8 21.5 max seating plane 3.5 3.5 maxnot tinned 15.7 min1232.1 max 1.2 0.7 max 1.0 0.4 M 2.0 5.45 5.45 Fig.16. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1996 6 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1996 7 Rev 1.000]
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