Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 5.5 A; IB = 1.38 A - 1.0 V ICsat Collector saturation current 5.5 - A ts Storage time ICM = 5.5 A; IB(end) = 1.2 A 7.4 8.5 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c case 1 base 2 collectorb3emitter Rbe case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A IB Base current (DC) - 10 A IBM Base current peak value - 20 A -IB(AV) Reverse base current average over any 20 ms period - 150 mA -I 1BM Reverse base current peak value - 20 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

ESD LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV 1.5 kΩ) 1 Turn-off current. November 1995 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A 85 - 150 mA BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V RBE Base-emitter resistance VEB = 7.5 V 65 Ω VCEsat Collector-emitter saturation voltage IC = 5.5 A; IB = 1.38 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 5.5 A; IB = 1.38 A 0.82 0.9 1.0 V VF Diode forward voltage IF = 5.5 A 1.6 V hFE DC current gain IC = 1 A; VCE = 5 V 14 19 26 hFE IC = 5.5 A; VCE = 1V45.5 7.5

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (16 kHz line ICM = 5.5 A; LC = 750 µH; deflection circuit) Cfb = 15.5 nF; VCC = 125 V; IB(end) = 1.2 A; LB = 6 µH; -VBB = 4 V; -IBM = ICM/2 ts Turn-off storage time 7.4 8.5 µs tf Turn-off fall time 0.7 0.9 µs 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.100,

ICM

TRANSISTOR + 150 v nominal adjust for ICM IC DIODE t Lc IB IBend t 20us 26us D.U.T. IBend LB Cfb 64us VCE -VBB Rbe t

Fig.1. Switching times waveforms. Fig.3. Switching times test circuit.

ICM hFE BU2720/22DF 90 % 100 VCE = 5 V Ths = 25 C Ths = 85 C

IC

10 % tf t 10 ts

IB

IBend t - IBM 0.01 0.1 1 10 IC / A 100

Fig.2. Switching times definitions. Fig.4. DC current gain. hFE = f (IC) Parameter Ths

(Low and high gain)

November 1995 3 Rev 1.100

, hFE BU2720/22DF PTOT / W BU2720DF 100 100 VCE = 1 V Ths = 25 C Ths = 85 C IC = 4.5Af= 16 kHz Ths = 85 C 10 10110.01 0.1 1 10 0 0.5 1 1.5 2IC / A 100 IB / A

Fig.5. DC current gain. hFE = f (IC) Fig.8. Limit Ptot; Ths = 85˚C Parameter Ths Ptot = f (IB(end)); IC = 4.5 A; f = 16 kHz

(Low and high gain) VCEsat / V BU2720DF PTOT / W BU2720DF 10 100 Ths = 85 C IC = 5.5 A Ths = 25Cf= 16 kHz Ths = 85 C IC/IB = 8 10 IC/IB = 4 0.1 0.01 1 0.1 1 10 100 0.5 1 1.5 2 2.5 IC / A IB / A

Fig.6. Typical collector-emitter saturation voltage. Fig.9. Limit Ptot; Ths = 85˚C VCEsat = f (IC); parameter IC/IB Ptot = f (IB(end)); IC = 5.5 A; f = 16 kHz

VBEsat / V BU2720DF ts/tf / us BU2720AF 1 12 Ths = 85 C Ths = 25 C IC = 5.5 A 10 0.9 0.8 6 4.5 A IC = 4.5 A IC = 5.5 A 0.7 0.6000.5 1 1.5 2 0.5 1 1.5 2 2.5 IB / A IB / A

Fig.7. Typical base-emitter saturation voltage. Fig.10. Limit storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Ths = 85˚C; f = 16 kHz November 1995 4 Rev 1.100

, PD% Normalised Power Derating VCC120 with heatsink compound 80 LC 50 VCL IBend 40 LB 30 CFB 20 -VBB T.U.T. 0 20 40 60 80 100 120 140 Ths / C Fig.13. Test Circuit RBSOA. VCC = 150 V;

Fig.11. Normalised power dissipation. -VBB = 1 - 4 V; PD% = 100⋅PD/PD 25˚C = f (Ths) LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH; CFB = 1 - 4 nF; IB(end) = 1.2 - 4 A

Zth / (K/W) 10 IC / A BU2720AF/DF26 0.5 1 20 0.2 18 Area where 0.1 16 fails occur 0.05 0.1 14 0.02 12 0.01 P tpD D = tp8T6D= 0Tt20.001 1E-06 1E-04 1E-02 1E+00 0100 1000 1700 t / s VCE / V

Fig.12. Transient thermal impedance. Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax Zth j-hs = f(t); parameter D = tp/T November 1995 5 Rev 1.100

, MECHANICAL DATA Dimensions in mm 15.3 max 5.2 max Net Mass: 5.5 g 0.7 3.1 7.3 3.3 3.2 o 6.2 45 5.8 21.5 max seating plane 3.5 3.5 maxnot tinned 15.7 min1232.1 max 1.2 0.7 max 1.0 0.4 M 2.0 5.45 5.45 Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.100]

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