Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 8 A ICM Collector current peak val...
Author: Yasmin Holden Shared: 8/19/19
Downloads: 1560 Views: 3837

Content

GENERAL DESCRIPTION

High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 4 A; IB = 1.33 A - 1.0 V ICsat Collector saturation current 4 - A ts Storage time ICM = 4 A; IB(end) = 0.8 A 4.8 5.5 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c case 1 base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A -IBM Reverse base current peak value 1 - 5 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

ESD LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV 1.5 kΩ) 1 Turn-off current. November 1995 1 Rev 1.000,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 6 V; IC = 0 A - - 70 µA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 900 - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 4 A; IB = 1.33 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 4 A; IB = 1.33 A 0.83 0.91 1.00 V hFE DC current gain IC = 100 mA; VCE = 5 V 12 21 35 hFE IC = 4 A; VCE = 1V367.3

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (line deflection ICM = 4 A; IB(end) = 0.8 A; -IBM = ICM/2; circuit 16 kHz) LB = 6 µH; -VBB = 4 V; LC = 1 mH; CFB = 12.2 nF ts Turn-off storage time 4.8 5.5 µs tf Turn-off fall time 0.4 0.52 µs 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.000,

ICM

+ 50v 90 % 100-200R

IC

10 % Horizontal tf t Oscilloscope ts

IB

Vertical IBend 100R 1R t 6V 30-60 Hz - IBM

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions.

IC / mA + 150 v nominal adjust for ICM Lc IBend LB T.U.T.100 BY228Cfb 0 -VBB VCE / V min VCEOsust

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. ICM

TRANSISTOR hFE BU2708AF100 IC DIODE VCE = 5 V Ths = 25 C Ths = 85CtIB IBend t 10 20us 26us 64us

VCE

0.01 0.1 1 10 100 t IC / A

Fig.3. Switching times waveforms. Fig.6. DC current gain. hFE = f (IC) Parameter Ths

(Low and high gain)

November 1995 3 Rev 1.000

, hFE BU2708AF PTOT / W BU2708AF/DF 100 10 VCE = 1 V Ths = 25 C IC = 3.5 A Ths = 85Cf= 16 kHz Tj = 85C110.01 0.1 1 10 100 0 0.5 1 1.5 2 IC / A IB / A

Fig.7. DC current gain. hFE = f (IC) Fig.10. Limit Ptot; Tj = 85˚C Parameter Ths Ptot = f (IB(end)); IC = 3.5 A; f = 16 kHz

(Low and high gain) VCEsat / V BU2708AF PTOT / W BU2708AF/DF 10 10 Tj = 85 C IC = 4 A Tj = 25Cf= 16 kHz Tj = 85 C IC/IB = 8 IC/IB = 4 0.1 0.01 1 0.1 1 10 100 0 0.5 1 1.5 2 IC / A IB / A

Fig.8. Typical collector-emitter saturation voltage. Fig.11. Limit Ptot; Tj = 85˚C VCEsat = f (IC); parameter IC/IB Ptot = f (IB(end)); IC = 4.0 A; f = 16 kHz

VBEsat / V BU2708AF ts/tf / us BU2708AF/DF 1.2 10 Tj = 85 C 1.1 Tj = 25 C IC = 4A 0.9 4 IC = 4A IC = 3.5A 0.8 3A 0.7 2 0.6 0 0.5 1 1.5 2 00 0.5 1 1.5 2 IB / A IB / A

Fig.9. Typical base-emitter saturation voltage. Fig.12. Limit storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz November 1995 4 Rev 1.000

, PD% Normalised Power Derating VCC120 with heatsink compound 80 LC 50 VCL IBend 40 LB 30 CFB 20 -VBB T.U.T. 0 20 40 60 80 100 120 140 Ths / C Fig.15. Test Circuit RBSOA. VCC = 150 V;

Fig.13. Normalised power dissipation. -VBB = 1 - 4 V; PD% = 100⋅PD/PD 25˚C = f (Ths) LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH; CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A

Zth / K/W BU2708AF/DF 10 IC / A BU2708AF/DF16 0.5 1 Area where12 0.2 Fails occur 0.1 10 0.05 0.1 0.02 8 0.01 PD tp D = tpT4D= 02Tt0.001 1.0E-06 1E-04 1E-02 1E+00 0 tp / sec 100 VCE / V 1000 1700

Fig.14. Transient thermal impedance. Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax Zth j-hs = f(t); parameter D = tp/T November 1995 5 Rev 1.000

, MECHANICAL DATA Dimensions in mm 15.3 max 5.2 max Net Mass: 5.5 g 0.7 3.1 7.3 3.3 3.2 o 6.2 45 5.8 21.5 max seating plane 3.5 3.5 maxnot tinned 15.7 min1232.1 max 1.2 0.7 max 1.0 0.4 M 2.0 5.45 5.45 Fig.17. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.000]
15

Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARA
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX.
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collec
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resu
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
HITFETBTS 917 Smart Lowside Power Switch Application
HITFETBTS 917 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 100 mΩ • Thermal Shutdown Current limit ID(lim) 1.5 A • Overload protection Nominal load current ID(ISO) 3.5 A • Short circuit prot
Smart Highside Power Switch One Channel: 20mΩ
Smart Highside Power Switch One Channel: 20mΩ Product Summary Package On-state Resistance RON 20mΩ TO-220-5-11 TO-263-5-2 TO-220-5-12 Operating Voltage Vbb(on) 4.75 ... 41V Nominal load current IL(ISO) 21A Current limitation IL(lim) 65A Standard SMD Straight General Description • N channel vertical
PROFET® BTS 432 D2 Smart Highside Power Switch
PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1) VLoad dump 80 V • Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V• Short-circuit protection V • bb (operation) 4.5 ... 42 V Current limitation • Vbb (reverse) -32 V
PROFET® BTS409L1 Smart Highside Power Switch
PROFET® BTS409L1 Smart Highside Power Switch Features Product Summary • Overload protection Overvoltage protection V • bb(AZ) 43 V Current limitation • V 5.0 ... 34 V Short circuit protection Operating voltage bb(on) • Thermal shutdown On-state resistance RON 200 mΩ • Overvoltage protection (includi
STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs
® BTB24 B STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs DESCRIPTION A1 The BTB24 B triac family are high performance A2 G glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- TO
Infineon BUP 314
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314 1200V 52A TO-218 AB Q67040-A4206 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V
Infineon BUP 213
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 213 1200V 32A TO-220 AB Q67040-A4407 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V