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GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 16 A ICM Collector current peak value - 40 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 9.0 A; IB = tbf - 5.0 V ICsat Collect...
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GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 16 A ICM Collector current peak value - 40 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 9.0 A; IB = tbf - 5.0 V ICsat Collector saturation current 9 - A ts Storage time ICM = 9.0 A; IB(end) = tbf - 4.5 µs

PINNING - SOT430 PIN CONFIGURATION SYMBOL

PIN DESCRIPTIONc1base 2 collectorb3emitter heat collector sink123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 16 A ICM Collector current peak value - 40 A IB Base current (DC) - 16 A IBM Base current peak value - 30 A -IB(AV) Reverse base current average over any 20 ms period - 200 mA -IBM Reverse base current peak value 1 - 30 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W Tstg Storage temperature -55 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - - 1.0 K/W Rth j-a Junction to ambient in free air 45 - K/W 1 Turn-off current. December 1995 1 Rev 1.000,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Base-emitter breakdown voltage IB = 1 mA 7.5 14 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 9.0 A; IB = tbf - - 5.0 V VBEsat Base-emitter saturation voltage 3 IC = 9.0 A; IB = tbf tbf tbf tbf V hFE DC current gain IC = 1 A; VCE = 5 V 10 - 30 hFE IC = 9 A; VCE = 5 V tbf tbf tbf

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (32 kHz line ICM = 9.0 A; LC = 250 µH; Cfb = 13 nF; deflection test circuit). IB(end) = tbf ts Turn-off storage time - 4.5 µs tf Turn-off fall time - 0.35 µs 2 Measured with half sine-wave voltage (curve tracer). 3 VBEsat limits are targetted at ± 5% of the 50% value of the distribution of measured values. December 1995 2 Rev 1.000, MECHANICAL DATA Dimensions in mm 20.5 max 5.3 max Net Mass: 9 g 3.1 3.0 3.5 6.0 3.0 4.0 25.5 26.5 10.0 3.0 seating plane 2.5 3.0 max 19.5 min 3.5 max 0.8 1.0 0.4 M 0.8 max 3.0 max 5.45 5.45 Fig.1. SOT430; pin 2 connected to mounting base. December 1995 3 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1995 4 Rev 1.000]
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