Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V ICsat Collector saturation current 8.0 - A tf Fall time ICM = 8.0 A; IB(end) = 1.1 A 0.2 0.35 µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A IB Base current (DC) - 8 A IBM Base current peak value - 12 A -IB(AV) Reverse base current average over any 20 ms period - 200 mA -I 1BM Reverse base current peak value - 7 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -55 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W 1 Turn-off current. December 1995 1 Rev 2.000,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V VBEsat Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.3 V hFE DC current gain IC = 100 mA; VCE = 5V613 26 hFE IC = 8 A; VCE = 5V5710

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (32 kHz line ICM = 8.0 A; LC = 260 µH; Cfb = 13 nF; deflection circuit) IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V; (-dIB/dt = 1.6 A/µs) ts Turn-off storage time 3.0 4.0 µs tf Turn-off fall time 0.2 0.35 µs 2 Measured with half sine-wave voltage (curve tracer). December 1995 2 Rev 2.000,

ICM

+ 50v 90 % 100-200R

IC

10 % Horizontal tf t Oscilloscope ts

IB

Vertical IBend 100R 1R t 6V 30-60 Hz - IBM

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions.

IC / mA + 150 v nominal adjust for ICM Lc IBend LB T.U.T.100 BY228Cfb 0 -VBB VCE / V min VCEOsust

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. I

TRANSISTOR CM hFE BU2525AF100 IC DIODE Tj = 25Ct5VTj = 125 C IB IBendt1V10us 13us 32us

VCE

0.1 1 10 100 t IC / A

Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC)

parameter VCE

December 1995 3 Rev 2.000

, VBESAT / V BU2525AF VCESAT / V BU2525AF 1.2 10 Tj = 25 C Tj = 25 C 1.1 Tj = 125 C Tj = 125 C 0.98A0.8 1 0.7 IC/IB= 6A35A0.6 4 IC = 4 A 0.5 5 0.4 0.1 0.1 1 10 0.1 1 10 IC / A IB / A

Fig.7. Typical base-emitter saturation voltage. Fig.10. Typical collector-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC

VCESAT / V BU2525AF Eoff / uJ BU2525AF 1 1000 0.9 IC/IB = IC = 8 A 0.8 0.737A0.6 0.5 100 Tj = 25 C 0.4 Tj = 125 C 0.3 0.2 0.1 0 10 0.1 1 10 100 0.1 1 10 IC / A IB / A

Fig.8. Typical collector-emitter saturation voltage. Fig.11. Typical turn-off losses. Tj = 85˚C VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC; f = 32 kHz

VBESAT / V BU2525AF ts, tf / us BU2525AF 1.2 12 Tj = 25 C 11 32 kHz 1.1 Tj = 125 C 10187ts 0.9 6 IC= 5 0.88A4IC = 6 A 0.728A5A7A4A1tf 0.60012340.1 1 10 IB / A IB / A

Fig.9. Typical base-emitter saturation voltage. Fig.12. Typical collector storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz December 1995 4 Rev 2.000

, PD% Normalised Power Derating120 with heatsink compound IC / A BU2525AF 110 100 90 tp = 80 ICM = 0.01 70 40 us 50 ICDC 40 10 100 us 0 20 40 60 80 100 120 140 Ths / C

Fig.13. Normalised power dissipation. Ptot PD% = 100⋅P /P = f (T1DD25˚C hs)

1 ms Zth / (K/W) BU2525AF 0.5 1 0.1 0.2 0.1 10 ms 0.05 0.1 DC 0.02 P tp 0.01DD= tp

T

0.01 D = 0Tt110 100 1000 VCE / V 0.001 1E-06 1E-04 1E-02 1E+00 Fig.15. Forward bias safe operating area. Ths = 25 ˚C t / s ICDC & ICM = f(VCE); ICM single pulse; parameter tp

Fig.14. Transient thermal impedance. Second-breakdown limits independant of temperature. Zth j-hs = f(t); parameter D = tp/T Mounted with heatsink compound. December 1995 5 Rev 2.000

, MECHANICAL DATA Dimensions in mm 5.8 max Net Mass: 5.88 g 16.0 max 0.7 3.0 4.5 3.3 10.0 27 25 max 25.1 25.7 22.5 max 4.7 max 2.2 max 18.1 4.5 min 1.1 0.4 M 0.9 max 5.45 5.45 3.3 Fig.16. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1995 6 Rev 2.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1995 7 Rev 2.000]

15