Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.76 A - 5.0 V ICsat Collector saturation current 6.0 - A ts Storage time ICM = 6.0 A; IB(end) = 0.7 A 1.7 2.0 µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A IB Base current (DC) - 6 A IBM Base current peak value - 9 A -IB(AV) Reverse base current average over any 20 ms period - 150 mA -IBM Reverse base current peak value 1 - 6 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -55 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W 1 Turn-off current. December 1995 1 Rev 2.000,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 0.25 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 0.25 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.76 A - - 5.0 V VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.76 A - - 1.3 V hFE DC current gain IC = 1 A; VCE = 5V810 21 hFE IC = 6 A; VCE = 5V578

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (64 kHz line ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF; deflection circuit) IB(end) = 0.7 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A / µs) ts Turn-off storage time 1.7 2.0 µs tf Turn-off fall time 0.12 0.25 µs 2 Measured with half sine-wave voltage (curve tracer). December 1995 2 Rev 2.000,

ICM

+ 50v 90 % 100-200R

IC

10 % Horizontal tf t Oscilloscope ts

IB

Vertical IBend 100R 1R t 6V 30-60 Hz - IBM Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICM Lc LB T.U.T. 100 IBend BY228Cfb 0 -VBB VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. TRANSISTOR I CM VCCICDIODE t

LC

IBIBend t VCL IBend 5 us 6.5 us LB

CFB

16 us -VBB T.U.T. VCEtFig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; Fig.3. Switching times waveforms (64 kHz). LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH; CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A December 1995 3 Rev 2.000, h FE BU2522A VBESAT / V BU2522A 100 1.2 Tj = 85 C Tj = 85 C Tj = 25 C 1.1 Tj = 25 C Tj = -40 C 10 0.9 0.8 IC = 7A 0.7 6A 5A 1 0.6 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IC / A IB / A Fig.7. Typical DC current gain. hFE = f (IC) Fig.10. Typical base-emitter saturation voltage. VCE = 5 V VBEsat = f (IB); parameter IC VBESAT / V BU2522A Poff / W BU2522AF 1.2 100 Tj = 85 C 1.1 Tj = 25C1IC = 0.9 6A 0.8 10 5A 0.7 IC/IB = 0.6 5 0.5 0.4 1 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IC / A IB / A Fig.8. Typical base-emitter saturation voltage. Fig.11. Typical turn-off losses. Tj = 85˚C VBEsat = f (IC); parameter IC/IB Poff = f (IB); parameter IC; f = 64 kHz VCESAT / V BU2522A ts, tf / us BU2522AF 10 4 Tj = 85 C 3.5 Tj = 25 C 2.5 IC/IB = 532IC = 1.5 0.1 6A 5A 0.5 0.01 0 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IC / A IB / A Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical collector storage and fall time. VCEsat = f (IC); parameter IC/IB ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz December 1995 4 Rev 2.000, Normalised Power Derating Zth / (K/W) 120 PD% 10 with heatsink compound 0.5 90 1 80 0.2 70 0.1 0.05 60 0.1 50 0.02 30 0.01 P tpD D = tp

T

10 D = 0Tt00.001 0 20 40 60 80 100 120 140 1E-06 1E-04 1E-02 1E+00 Ths / C t / s

Fig.13. Normalised power dissipation. Fig.14. Transient thermal impedance. PD% = 100⋅PD/PD 25˚C = f (Ths) Zth j-hs = f(t); parameter D = tp/T December 1995 5 Rev 2.000

, IC / A BU2520AF IC / A BU2522AF 100 30 tp = ICM = 0.01 30 us 20

ICDC

100 us 0 500 1000 1500 Ptot VCE / V 1 Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax 1 ms 0.1 10 ms

DC

0.01 1 10 100 1000 VCE / V Fig.15. Forward bias safe operating area. Ths = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. December 1995 6 Rev 2.000, MECHANICAL DATA Dimensions in mm 5.8 max Net Mass: 5.88 g 16.0 max 0.7 3.0 4.5 3.3 10.0 27 25 max 25.1 25.7 22.5 max 4.7 max 2.2 max 18.1 4.5 min 1.1 0.4 M 0.9 max 5.45 5.45 3.3 Fig.17. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1995 7 Rev 2.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1995 8 Rev 2.000]

15