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GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 ...
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GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V ICsat Collector saturation current 6 - A VF Diode forward voltage IF = 6.0 A - 2.2 V tf Fall time ICM = 6.0 A; IB(end) = 1.0 A 0.35 0.5 µs

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabc1base 2 collectorb3emitter Rbe tab collector123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A IB Base current (DC) - 6 A IBM Base current peak value - 9 A -IB(AV) Reverse base current average over any 20 ms period - 150 mA -IBM Reverse base current peak value 1 - 6 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - - 1.0 K/W Rth j-a Junction to ambient in free air 45 - K/W 1 Turn-off current. November 1995 1 Rev 1.200,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A 100 - 300 mA BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V Rbe Base-emitter resistance VEB = 7.5 V - 50 - Ω VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V hFE DC current gain IC = 1.0 A; VCE = 5 V - - 23 hFE IC = 6 A; VCE = 5V5710 VF Diode forward voltage IF = 6 A - - 2.2 V

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF; deflection circuit) IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs) ts Turn-off storage time 4.5 5.5 µs tf Turn-off fall time 0.35 0.5 µs ICM ICM

TRANSISTOR

90 % IC DIODE t IC IB IBend 10 % t tf t ts 20us 26us IB IBend 64us t

VCE

t - IBM Fig.1. Switching times waveforms (16 kHz). Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.200, + 150 v nominal VCESAT / V BU2520D 1.0 adjust for ICM IC/IB = 0.9 0.8 0.7 Lc 3 0.6 0.5 Tj = 25 C 0.4 D.U.T. Tj = 125 C IBend LB 0.3 Cfb 0.2 0.1 -VBB Rbe 0.1 1 10 100 IC / A

Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB

hFE BU2520D VBESAT / V BU2520D 100 1.2 Tj = 25 C Tj = 25 C 1.1 Tj = 125C5VTj = 125 C 1.0 10 0.9 IC= 1 V 0.88A6A0.75A4A10.6 0.1 1 10 10001234IC / A IB / A

Fig.4. Typical DC current gain. hFE = f (IC) Fig.7. Typical base-emitter saturation voltage.

parameter VCE VBEsat = f (IB); parameter IC VBESAT / V BU2520D VCESAT / V BU2520D 1.2 10 Tj = 25 C Tj = 25 C 1.1 Tj = 125 C Tj = 125 C 1.0 0.98A0.816A0.7 IC/IB= 35A0.6 IC = 4 A 0.5 5 0.4 0.1 0.1 1 10 0.1 1 10 IC / A IB / A

Fig.5. Typical base-emitter saturation voltage. Fig.8. Typical collector-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC November 1995 3 Rev 1.200

, Eoff / uJ Zth / (K/W) 1000 10 IC = 6A10.5 0.25A100 0.1 0.1 0.05 0.02 P tp tp 0.01DD= T D = 0Tt10 0.001 0.1 1 10 1E-06 1E-04 1E-02 1E+00 IB / A t / s

Fig.9. Typical turn-off losses. Tj = 85˚C Fig.12. Transient thermal impedance. Eoff = f (IB); parameter IC; parameter frequency Zth j-mb = f(t); parameter D = tp/T

ts, tf / us IC / A BU2520A 12 100 11 ts 10 tp = 8 ICM = 0.01 7 30 us 5 IC = ICDC46A1025A100 us 1 tf 0.1 1 10 IB / A Ptot

Fig.10. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz11ms PD% Normalised Power Derating 0.1 70 10 ms 50 DC 10 0.01 0 20 40 60 80 100 120 140 1 10 100 1000 VCE / V Tmb / C Fig.13. Forward bias safe operating area. Tmb = 25 ˚C

Fig.11. Normalised power dissipation. ICDC & ICM = f(VCE); ICM single pulse; parameter tp PD% = 100⋅PD/PD 25˚C = f (Tmb) Second-breakdown limits independant of temperature. November 1995 4 Rev 1.200

,

MECHANICAL DATA

Dimensions in mm 15.2 Net Mass: 5 g max14 13.6 4.6 max 2 max 4.25 4.15 2 4.4 max 12.7 max 2.2 max 0.5 dimensions within min 13.6 this zone are min uncontrolled1235.5 0.5 M 0.4 1.15 0.95 1.6 Fig.14. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 5 Rev 1.200,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Rev 1.200]
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