Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V ICsat Col...
Author: Zając Shared: 8/19/19
Downloads: 562 Views: 1882

Content

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V ICsat Collector saturation current 6 - A tf Fall time ICM = 6.0 A; IB(end) = 0.85 A 0.2 0.35 µs

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabc1base 2 collectorb3emitter tab collector123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A IB Base current (DC) - 6 A IBM Base current peak value - 9 A -IB(AV) Reverse base current average over any 20 ms period - 150 mA -IBM Reverse base current peak value 1 - 6 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - - 1.0 K/W Rth j-a Junction to ambient in free air 45 - K/W 1 Turn-off current. November 1995 1 Rev 1.200,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I 2CES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V hFE DC current gain IC = 100 mA; VCE = 5V613 26 hFE IC = 6 A; VCE = 5V5710

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (32 kHz line ICM = 6.0 A; LC = 330 µH; Cfb = 9 nF; deflection circuit) IB(end) = 0.85 A; LB = 3.45 µH; -VBB = 4 V; (-dIB/dt = 1.2 A/µs) ts Turn-off storage time 3.0 4.0 µs tf Turn-off fall time 0.2 0.35 µs Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF; deflection circuit) IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs) ts Turn-off storage time 4.5 5.5 µs tf Turn-off fall time 0.35 0.5 µs IC / mA + 50v 100-200R Horizontal 200 Oscilloscope Vertical 100 100R 1R 6V VCE / V min 30-60 Hz VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.200,

ICM

TRANSISTOR + 150 v nominal adjust for ICM IC DIODE t Lc IB IBend t 20us 26us IBend LB T.U.T. BY228 Cfb 64us VCE -VBB t

Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit (BU2520A). I

TRANSISTOR CM hFE BU2520A100 IC DIODE Tj = 25Ct5VTj = 125 C IB IBendt1V10us 13us 32us

VCE

0.1 1 10 100 t IC / A

Fig.4. Switching times waveforms (32 kHz). Fig.7. Typical DC current gain. hFE = f (IC)

parameter VCE ICM VBESAT / V BU2520A 1.2 90 % Tj = 25 C 1.1 Tj = 125 C

IC

0.9 10 % 0.8 tf t ts 0.7 IC/IB=

IB

IBend 30.6 t 0.5 5 0.4 0.1 1 10 - IBM IC / A

Fig.5. Switching times definitions. Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB November 1995 3 Rev 1.200

, VCESAT / V BU2520A Eoff / uJ BU2520A 1 1000 0.9 IC/IB = 0.8 4 32 kHz 0.7 IC = 6 A 0.6 16 kHz 0.5 100 Tj = 25C5A0.4 Tj = 125 C 0.3 0.2 0.1 0 10 0.1 1 10 100 0.1 1 10 IC / A IB / A

Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical turn-off losses. Tj = 85˚C VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC; parameter frequency

VBESAT / V BU2520A ts, tf / us BU2520A 1.2 12 Tj = 25 C 11 16 kHz ts 1.1 Tj = 125 C 10180.965IC = IC= 0.88A46A6A0.725A5A1tf4A0.60012340.1 1 10 IB / A IB / A

Fig.10. Typical base-emitter saturation voltage. Fig.13. Typical collector storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

VCESAT / V BU2520A ts, tf / us BU2520A 10 12 Tj = 25 C 11 Tj = 125 C 32 kHz10 8 ts8A7166A5IC = 5A436AIC = 4A25A1tf 0.1 0 0.1 1 10 0.1 1 10 IB / A IB / A

Fig.11. Typical collector-emitter saturation voltage. Fig.14. Typical collector storage and fall time. VCEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz November 1995 4 Rev 1.200

, PD% Normalised Power Derating 120 IC / A BU2520A 110 100 100 tp = 80 ICM = 0.01 70 30 us 50 ICDC 40 10 20 100 us 0 20 40 60 80 100 120 140 Tmb / C Ptot

Fig.15. Normalised power dissipation. PD% = 100⋅P /P1DD25˚C = f (Tmb)

1 ms Zth / (K/W) 0.5 0.1 0.2 10 ms 0.1 0.1 0.05

DC

0.02 P tp tp 0.01DD= T D = 0 t 0.01 T 0.001 1E-06 1E-04 1E-02 1E+00 1 10 100 1000 VCE / V t / s Fig.17. Forward bias safe operating area. Tmb = 25 ˚C

Fig.16. Transient thermal impedance. ICDC & ICM = f(VCE); ICM single pulse; parameter tp Zth j-mb = f(t); parameter D = tp/T Second-breakdown limits independant of temperature. November 1995 5 Rev 1.200

,

MECHANICAL DATA

Dimensions in mm 15.2 Net Mass: 5 g max14 13.6 4.6 max 2 max 4.25 4.15 2 4.4 max 12.7 max 2.2 max 0.5 dimensions within min 13.6 this zone are min uncontrolled1235.5 0.5 M 0.4 1.15 0.95 1.6 Fig.18. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.200,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.200]
15

Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collec
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resu
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load varia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
HITFETBTS 917 Smart Lowside Power Switch Application
HITFETBTS 917 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 100 mΩ • Thermal Shutdown Current limit ID(lim) 1.5 A • Overload protection Nominal load current ID(ISO) 3.5 A • Short circuit prot
Smart Highside Power Switch One Channel: 20mΩ
Smart Highside Power Switch One Channel: 20mΩ Product Summary Package On-state Resistance RON 20mΩ TO-220-5-11 TO-263-5-2 TO-220-5-12 Operating Voltage Vbb(on) 4.75 ... 41V Nominal load current IL(ISO) 21A Current limitation IL(lim) 65A Standard SMD Straight General Description • N channel vertical
PROFET® BTS 432 D2 Smart Highside Power Switch
PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1) VLoad dump 80 V • Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V• Short-circuit protection V • bb (operation) 4.5 ... 42 V Current limitation • Vbb (reverse) -32 V
PROFET® BTS409L1 Smart Highside Power Switch
PROFET® BTS409L1 Smart Highside Power Switch Features Product Summary • Overload protection Overvoltage protection V • bb(AZ) 43 V Current limitation • V 5.0 ... 34 V Short circuit protection Operating voltage bb(on) • Thermal shutdown On-state resistance RON 200 mΩ • Overvoltage protection (includi
STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs
® BTB24 B STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs DESCRIPTION A1 The BTB24 B triac family are high performance A2 G glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- TO
Infineon BUP 314
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314 1200V 52A TO-218 AB Q67040-A4206 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V
Infineon BUP 213
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 213 1200V 32A TO-220 AB Q67040-A4407 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V
Infineon BUP 212
IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 212 1200V 22A TO-220 AB Q67040-A4 .4 .0 .8 .Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Emitter-c
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ LOW BASE-DRIVE REQUIREMENTS ■ VERY HIGH SWITCHING SPEED 3 ■ FULLY CHARA
Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D   NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The BUL44/BUL44F have an applications specific state–of–the–art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ FULLY CHARACTERISED AT 125oC 3 ■ LARGE RBSO
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 34 32 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipatio