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GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM C...
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GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V ICsat Collector saturation current 4.5 - A VF Diode forward voltage IF = 4.5 A 1.6 2.0 V tf Fall time ICM = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1base 2 collectorb3emitter Rbe case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A -IB(AV) Reverse base current average over any 20 ms period - 100 mA -IBM Reverse base current peak value 1 - 5 A Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W Tstg Storage temperature -55 150 ˚C Tj Junction temperature - 150 ˚C 1 Turn-off current. December 1995 1 Rev 2.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A 140 - 390 mA BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V Rbe Base-emitter resistance VEB = 7.5 V - 33 - Ω VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V L = 25 mH VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 5.0 V VCEsat IC = 4.5 A; IB = 1.29 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V hFE DC current gain IC = 1 A; VCE = 5V713 23 hFE IC = 4.5 A; VCE = 1V45.5 7.5 VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 5.0 6.0 µs tf Turn-off fall time 0.4 0.6 µs Switching times (38 kHz line ICM = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 4.7 5.7 µs tf Turn-off fall time 0.25 0.35 µs 2 Measured with half sine-wave voltage (curve tracer). December 1995 2 Rev 2.100,

ICM

TRANSISTOR h FE BU2508DF100 IC DIODE t Tj = 25 C Tj = 125 C 5V IB IBend t 20us 26us 1V 64us

VCE

0.01 0.1 1 10 t IC / A

Fig.1. Switching times waveforms. Fig.4. Typical DC current gain. hFE = f (IC)

parameter VCE ICM VBESAT / V BU2508DF 90 % 1.2 Tj = 25 C 1.1 IC Tj = 125 C 0.9 10 % 0.8 tf IC/IB=t ts 0.7 3

IB

IBend 40.6 t 0.5 0.4 0.1 1 10 - IBM IC / A

Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB

+ 150 v nominal VCESAT / V BU2508DF adjust for ICM 1 0.9 IC/IB= 0.8 1mH 0.7 3 0.6 0.5 Tj = 25 C D.U.T. 0.4 Tj = 125 C IBend LB 0.3 12nF 0.2 0.1 -VBB Rbe 0.1 1 10 IC / A

Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB December 1995 3 Rev 2.100

, VBESAT / V BU2508DF ts, tf / us BU2508DF 1.2 12 Tj = 25 C 11 ts 1.1 Tj = 125 C 10180.9 IC= 6 5 IC = 6A 0.8 4 4.5A 4.5A 3A 3.5A 0.7 2 2A tf 0.60012340.1 1 10 IB / A IB / A Fig.7. Typical base-emitter saturation voltage. Fig.10. Typical collector storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz VCESAT / V BU2508DF PD% Normalised Power Derating 10 120 with heatsink compound Tj = 25 C 110 Tj = 125 C 100 6A 90 4.5A 70 1 60 3A IC=2A 20 0.1 0 0.1 1 10 0 20 40 60 80 100 120 140 IB / A Ths / C Fig.8. Typical collector-emitter saturation voltage. Fig.11. Normalised power dissipation. VCEsat = f (IB); parameter IC PD% = 100⋅PD/PD 25˚C = f (Ths) Eoff / uJ BU2508DF IC = 4.5A 3.5A 0.1 1 10 IB / A Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 16 kHz December 1995 4 Rev 2.100, IC / A IC / A 100 100 = 0.01 = 0.01 ICM max ICM max tp = tp = 10 IC max 10 IC max II 10 us II 10 us Ptot max Ptot max11100 us 100 us 1 ms 1 msII0.1 0.1 10 ms 10 ms DC DC 0.01 0.01 1 10 100 1000 1 10 100 1000 VCE / V VCE / V Fig.12. Forward bias safe operating area. Ths = 25˚C Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. I Region of permissible DC operation. II Extension for repetitive pulse operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of 30 ± 5 newton force on the centre of the envelope. the envelope. December 1995 5 Rev 2.100, MECHANICAL DATA Dimensions in mm 5.8 max Net Mass: 5.88 g 16.0 max 0.7 3.0 4.5 3.3 10.0 27 25 max 25.1 25.7 22.5 max 4.7 max 2.2 max 18.1 4.5 min 1.1 0.4 M 0.9 max 5.45 5.45 3.3 Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1995 6 Rev 2.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1995 7 Rev 2.100]
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