Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V ICsat Collector saturation current 4.5 - A tf Fall time ICM = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabc1base 2 collectorb3emitter tab collector123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A -IB(AV) Reverse base current average over any 20 ms period - 100 mA -IBM Reverse base current peak value 1 - 5 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - - 1.0 K/W Rth j-a Junction to ambient in free air 45 - K/W 1 Turn-off current. November 1995 1 Rev 1.300,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I 2CES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V L = 25 mH VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 5.0 V VCEsat IC = 4.5 A; IB = 1.29 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V hFE DC current gain IC = 100 mA; VCE = 5V613 26 hFE IC = 4.5 A; VCE = 1V45.5 7.5

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 5.0 6.0 µs tf Turn-off fall time 0.4 0.6 µs Switching times (38 kHz line ICM = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 4.7 5.7 µs tf Turn-off fall time 0.25 0.35 µs IC / mA + 50v 100-200R Horizontal 200 Oscilloscope Vertical 100 100R 1R 6V VCE / V min 30-60 Hz VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.300, ICM h FE BU2508A 100 IC DIODE t 5V IB IBend t 1V 20us 26us 64us Tj = 25 C Tj = 125 C

VCE

0.01 0.1 1 10 t IC / A Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE

ICM

1.2 VBESAT / V BU2508A 90 % Tj = 25 C 1.1 Tj = 125 C

IC

0.9 10 % 0.8 IC/IB= tf t ts 0.7 3 IB 4 IBend 0.65t0.5 0.4 0.1 1 10 - IBM IC / A Fig.4. Switching times definitions. Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB + 150 v nominal 1 VCESAT / V BU2508A adjust for ICM 0.9 IC/IB= 0.8 5 0.7 4 1mH 0.6 3 0.5 Tj = 25 C 0.4 Tj = 125 C IBend LB BU2508A BY228 0.3 12nF 0.2 0.1 -VBB 0.1 1 10 IC / A Fig.5. Switching times test circuit (BU2508A). Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB November 1995 3 Rev 1.300, VBESAT / V BU2508A ts, tf / us BU2508A 1.2 12 Tj = 25 C 11 10 ts1.1 Tj = 125C180.9 IC= 6 6A 5 0.8 4.5A 4 IC = 3A 3 4.5A 2A 0.7 2 3.5A tf 0.60012340.1 1 10 IB / A IB / A Fig.9. Typical base-emitter saturation voltage. Fig.12. Typical collector storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz VCESAT / V BU2508A Zth / (K/W) 10 10 Tj = 25 C Tj = 125 C 6A 4.5A 0.5 0.2 0.1 3A 0.1 0.05 P tp tpD D = 0.02 T IC=2A D = 0Tt0.1 0.01 0.1 1 10 1E-06 1E-04 1E-02 1E+00 IB / A t / s Fig.10. Typical collector-emitter saturation voltage. Fig.13. Transient thermal impedance. VCEsat = f (IB); parameter IC Zth j-mb = f(t); parameter D = tp/T Eoff / uJ BU2508A PD% Normalised Power Derating 1000 120 IC = 4.5A 100 3.5A 80 100 60 10 0 0.1 1 10 0 20 40 60 80 100 120 140 IB / A Tmb / C Fig.11. Typical turn-off losses. Tj = 85˚C Fig.14. Normalised power dissipation. Eoff = f (IB); parameter IC; f = 16 kHz PD% = 100⋅PD/PD 25˚C = f (Tmb) November 1995 4 Rev 1.300, IC / A = 0.01 ICM max tp = 10 IC max 5 us (1) II 10 I 50 1 ms (2) 0.1 2

DC

0.01 1 10 100 1000 VCE / V Fig.15. Forward bias safe operating area. Tmb = 25˚C (1) Ptot max line. (2) Second-breakdown limits (independent of temperature). I Region of DC operation. II Extension for repetitive pulse operation. November 1995 5 Rev 1.300,

MECHANICAL DATA

Dimensions in mm 15.2 Net Mass: 5 g max14 13.6 4.6 max 2 max 4.25 4.15 2 4.4 max 12.7 max 2.2 max 0.5 dimensions within min 13.6 this zone are min uncontrolled1235.5 0.5 M 0.4 1.15 0.95 1.6 Fig.16. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.300,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.300]

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