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GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1750 V VCEO Collector-emitter voltage (open base) - 850 V IC Collector current (DC) - 5 A ICM Collector current peak value - 8 A Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W VCEsat Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - 1.0 V ICsat Collec...
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GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1750 V VCEO Collector-emitter voltage (open base) - 850 V IC Collector current (DC) - 5 A ICM Collector current peak value - 8 A Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W VCEsat Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - 1.0 V ICsat Collector saturation current 1.5 - A tf Fall time ICM = 1.5 A; IB(on) = 0.3 A 0.25 0.6 µsPINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION casec1base 2 collectorb3emitter case isolated123eLIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1750 V VCEO Collector-emitter voltage (open base) - 850 V IC Collector current (DC) - 5 A ICM Collector current peak value - 8 A IB Base current (DC) - 3 A IBM Base current peak value - 5 A -IB(AV) Reverse base current average over any 20ms period - 100 mA -IBM Reverse base current peak value - 4 A Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W Tstg Storage temperature -40 150 ˚C Tj Junction temperature - 150 ˚CTHERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink with heatsink compound - 4.0 K/W Rth j-a Junction to ambient in free air 55 - K/W April 1994 1 Rev 1.000,ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsinkSTATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I 1CES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = 1500 V - - 20 µA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 12 V; IC = 0 A - - 1 mA VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 750 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.3 V hFE DC current gain IC = 5 mA; VCE = 10V8- - hFE IC = 400 mA; VCE = 3 V 12 18 35 hFE IC = 1.5 A; VCE = 1V57-DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) ICon = 1.5 A; IBon = -IBoff = 0.3 A ton Turn-on time 1.1 1.5 µs ts Turn-off storage time 5 6.5 µs tf Turn-off fall time 0.75 1.0 µs Switching times (inductive load) ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V ts Turn-off storage time 2.0 3.0 µs tf Turn-off fall time 0.25 0.6 µs Switching times (inductive load) ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C ts Turn-off storage time 2.2 3.3 µs tf Turn-off fall time 0.2 0.7 µs 1 Measured with half sine-wave voltage (curve tracer). April 1994 2 Rev 1.000, ICon 90 % + 50v 90 % 100-200RIC
10 % ts Horizontal ton tf toff Oscilloscope IBonIB
Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 LC IBon LB T.U.T. -VBB VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LB = 1 uH VCC VCCRL LC VIM RB
0 T.U.T. VCL IBon LB tp -VBB T.U.T.T Fig.3. Test circuit resistive load. VIM = -6 to +8 V Fig.6. Test Circuit RBSOA. VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V; RB and RL calculated from ICon and IBon requirements. LB = 1 µH April 1994 3 Rev 1.000, ICon VBESAT / V BU1706A 90 % 1.2 1.1 IC Tj = 25 C Tj = 125 C 0.9 10 % 0.8 IC/IB = ts tf t 0.7 toff 4 0.6 5 IB IBon 0.56t0.4 0.1 1 10 -IBoff IC / AFig.7. Switching times waveforms with inductive load. Fig.10. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB
PD% Normalised Power Derating VCESAT / V BU1706A120 1 with heatsink compound 110 IC/IB =0.9 100 6 0.8 90 5 80 0.7 4 70 0.6 60 0.5 50 0.4 Tj = 25 C 0.3 Tj = 125 C 20 0.2 10 0.100020 40 60 80 100 120 140 0.1 1 10 Ths / C IC / AFig.8. Normalised power dissipation. Fig.11. Typical collector-emitter saturation voltage. PD% = 100⋅PD/PD 25 ˚C = f (Ths) VCEsat = f(IC); parameter IC/IB
Zth / (K/W) BU1706AX VBESAT / V BU1706A 10 1.2 Tj = 25 C 0.5 1.1 Tj = 125C10.2 0.1 1 0.05 0.1 0.02 0.9 t IC =P t pDpD= T 0.83A0.012AD=0 t 0.7 T 1.5 A 0.5 A 0.001 0.6 1u 10u 100u 1m 10m 100m 1 10 10001234t/ s IB / AFig.9. Transient thermal impedance. Fig.12. Typical base-emitter saturation voltage. Zth j-hs = f(t); parameter D = tp/T VBEsat = f(IB); parameter IC April 1994 4 Rev 1.000
, IC / A h FE BU1706A 10 I CM5VICDC 101VTj = 25C1Tj = 125CPtot 0.1 0.01 0.1 1 10 tp = IC / A Fig.15. Typical DC current gain. hFE = f(IC); parameter VCE 0.1 100 us IC / A BU1706A 1 ms 10 ms 4DC
0.01 1 10 VCE / V 100 1000 2 Fig.13. Forward bias safe operating area. Ths = 25 ˚C1IRegion of permissible DC operation. 0 II Extension for repetitive pulse operation. 0 400 800 1200 1600 2000 NB: Mounted with heatsink compound and VCE / V 30 ± 5 newton force on the centre of the Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax envelope. VCESAT / V BU1706A 3A 2A 1.5 A 0.1 IC = 0.5A Tj = 25 C Tj = 125 C 0.01 0.01 0.1 1 10 IB / A Fig.14. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC April 1994 5 Rev 1.000,MECHANICAL DATA
Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max Recesses (2x) 2.8 2.5 6.4 0.8 max. depth 15.8 15.8 19 seating max max. max. plane 3 max. not tinned 2.5 13.5 min. 1230.4 M 1.0 (2x) 0.6 2.54 0.90.5 0.7 5.08 2.5 1.3 Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1994 6 Rev 1.000,DEFINITIONS
Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1994 7 Rev 1.000]15
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