Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15...
Author: Zając Shared: 8/19/19
Downloads: 333 Views: 786

Content

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths ≤ 25 ˚C - 35 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V ICsat Collector saturation current 4.5 - A tf Fall time ICM = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A -IB(AV) Reverse base current average over any 20 ms period - 100 mA -IBM Reverse base current peak value 1 - 5 A Ptot Total power dissipation Ths ≤ 25 ˚C - 35 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink with heatsink compound - 3.6 K/W Rth j-a Junction to ambient in free air 55 - K/W 1 Turn-off current. November 1995 1 Rev 1.100,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V L = 25 mH VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 5.0 V VCEsat IC = 4.5 A; IB = 1.29 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V hFE DC current gain IC = 100 mA; VCE = 5V613 26 hFE IC = 4.5 A; VCE = 1 V 3.5 5.5 7.5

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (line deflection ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 5.0 6.0 µs tf Turn-off fall time 0.4 0.6 µs 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.100,

ICM

+ 50v 90 % 100-200R

IC

10 % Horizontal tf t Oscilloscope ts

IB

Vertical IBend 100R 1R t 6V 30-60 Hz - IBM

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions.

IC / mA + 150 v nominal adjust for ICM 1mH 100 IBend LB BU1508AX BY228 12nF 0 -VBB VCE / V min VCEOsust

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit (BU1508AX).

ICM h FE TRANSISTOR 100 IC DIODE t 5V IB IBend t 1V 20us 26us 64us Tj = 25 C Tj = 125 C

VCE

0.01 0.1 1 10 t IC / A

Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC)

parameter VCE

November 1995 3 Rev 1.100

, VBESAT / V VCESAT / V 1.2 10 Tj = 25 C 1.1 Tj = 25 C Tj = 125 C Tj = 125 C 1.0 6A 0.9 4.5A 0.8 IC/IB= 1 0.7343A 0.6 5 IC=2A 0.5 0.4 0.1 0.1 1 10 0.1 1 10 IC / A IB / A Fig.7. Typical base-emitter saturation voltage. Fig.10. Typical collector-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC VCESAT / V Eoff / uJ 1.0 1000 0.9 IC/IB= 0.8 5 IC = 4.5A 0.7 4 3.5A 0.6 3 0.5 100 Tj = 25 C 0.4 Tj = 125 C 0.3 0.2 0.1 0 10 0.1 1 10 0.1 1 10 IC / A IB / A Fig.8. Typical collector-emitter saturation voltage. Fig.11. Typical turn-off losses. Tj = 85˚C VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC VBESAT / V ts, tf / us 1.2 12 Tj = 25 C 11 ts 1.1 Tj = 125 C 10 1.0 8 0.9 IC= 6 6A 5 0.8 4.5A 4 IC = 3A 3 4.5A 2A 0.7 2 3.5A tf 0.60012340.1 1 10 IB / A IB / A Fig.9. Typical base-emitter saturation voltage. Fig.12. Typical collector storage and fall time. VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C November 1995 4 Rev 1.100, PD% Normalised Power Derating120 IC / A with heatsink compound 100 80 = 0.01 70 ICM max 60 tp = 50 10 IC max 10 us 30 II 0 Ptot max 0 20 40 60 80 100 120 140 Ths / C 1 100 us

Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths)

1 ms Zth / (K/W) I 10 0.1 10 ms 0.5 DC 0.2 0.1 0.05 0.01 0.1 0.02 P tpt110 100 1000DD= p T VCE / V D = 0 Fig.15. Forward bias safe operating area. Ths = 25˚CTtIRegion of permissible DC operation. 0.01 II Extension for repetitive pulse operation. 1E-06 1E-04 1E-02 1E+00 t / s NB: Mounted with heatsink compound and

Fig.14. Transient thermal impedance. 30 ± 5 newton force on the centre of Zth j-hs = f(t); parameter D = tp/T the envelope. November 1995 5 Rev 1.100

,

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max Recesses (2x) 2.8 2.5 6.4 0.8 max. depth 15.8 15.8 19 seating max max. max. plane 3 max. not tinned 2.5 13.5 min. 1230.4 M 1.0 (2x) 0.6 2.54 0.90.5 0.7 5.08 2.5 1.3 Fig.16. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.100]
15

Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive
HITFETBTS 917 Smart Lowside Power Switch Application
HITFETBTS 917 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 100 mΩ • Thermal Shutdown Current limit ID(lim) 1.5 A • Overload protection Nominal load current ID(ISO) 3.5 A • Short circuit prot
Smart Highside Power Switch One Channel: 20mΩ
Smart Highside Power Switch One Channel: 20mΩ Product Summary Package On-state Resistance RON 20mΩ TO-220-5-11 TO-263-5-2 TO-220-5-12 Operating Voltage Vbb(on) 4.75 ... 41V Nominal load current IL(ISO) 21A Current limitation IL(lim) 65A Standard SMD Straight General Description • N channel vertical
PROFET® BTS 432 D2 Smart Highside Power Switch
PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1) VLoad dump 80 V • Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V• Short-circuit protection V • bb (operation) 4.5 ... 42 V Current limitation • Vbb (reverse) -32 V
PROFET® BTS409L1 Smart Highside Power Switch
PROFET® BTS409L1 Smart Highside Power Switch Features Product Summary • Overload protection Overvoltage protection V • bb(AZ) 43 V Current limitation • V 5.0 ... 34 V Short circuit protection Operating voltage bb(on) • Thermal shutdown On-state resistance RON 200 mΩ • Overvoltage protection (includi
STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs
® BTB24 B STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs DESCRIPTION A1 The BTB24 B triac family are high performance A2 G glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- TO
Infineon BUP 314
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314 1200V 52A TO-218 AB Q67040-A4206 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V
Infineon BUP 213
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 213 1200V 32A TO-220 AB Q67040-A4407 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V
Infineon BUP 212
IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 212 1200V 22A TO-220 AB Q67040-A4 .4 .0 .8 .Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Emitter-c
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ LOW BASE-DRIVE REQUIREMENTS ■ VERY HIGH SWITCHING SPEED 3 ■ FULLY CHARA
Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D   NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The BUL44/BUL44F have an applications specific state–of–the–art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ FULLY CHARACTERISED AT 125oC 3 ■ LARGE RBSO
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 34 32 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipatio
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK454 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 9.2 8.2
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMP
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 15 14 A (SMP
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 11 10 A
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22.5 A Automotive applications, Switched Ptot Total powe
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 21
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK443 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC