Download: HITFETBTS 917 Smart Lowside Power Switch Application

HITFETBTS 917 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 100 mΩ • Thermal Shutdown Current limit ID(lim) 1.5 A • Overload protection Nominal load current ID(ISO) 3.5 A • Short circuit protection Clamping energy EAS 1000 mJ • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switch...
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HITFETBTS 917 Smart Lowside Power Switch

Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 100 mΩ • Thermal Shutdown Current limit ID(lim) 1.5 A • Overload protection Nominal load current ID(ISO) 3.5 A • Short circuit protection Clamping energy EAS 1000 mJ • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible

Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS chip on chip tech- nology. Fully protected by embedded protected functions. Vbb +

LOAD

2 M

NC

Drain 3 Overvoltage dv/dt Current1 protection IN limitation limitation 4 CC Overload Over- ESD temperature SShhoorrtt cciirrccuuiitt protection R protection pprrootteeccttiioonn

CC

Source 5

HITFET

Semiconductor Group Page 1 02.12.1998, Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Value Unit Drain source voltage VDS 60 V Drain source voltage for short circuit protection VDS(SC) RCC = 0 Ω 15 without RCC 50 Continuous input current 1) IIN mA -0.2V ≤ VIN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj - 40 ... +150 °C Storage temperature Tstg - 55 ... +150 Power dissipation Ptot 50 W TC = 25 °C Unclamped single pulse inductive energy EAS 1000 mJ ID(ISO) = 3.5 A Electrostatic discharge voltage (Human Body Model) VESD 3000 V according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection V 2)LoadDump = VA + VS VLD V VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω, ID=0,5*3.5A 75 td = 400 ms, RI = 2 Ω, ID= 3.5A 70 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC 2.5 K/W junction - ambient: RthJA 75 SMD version, device on PCB: 3) RthJA 45 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical without blown air. Semiconductor Group Page 2 02.12.1998, Electrical Characteristics Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage VDS(AZ) 60 - 73 V Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current IDSS - - 5 µA VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage VIN(th) 1.3 1.7 2.2 V ID = 0,7 mA Input current - normal operation, IDProtection Functions Thermal overload trip temperature Tjt 150 165 - °C Unclamped single pulse inductive energy EAS mJ ID = 3.5 A, Tj = 25 °C, Vbb = 32 V 1000 - - ID = 3.5 A, Tj = 150 °C, Vbb = 32 V 225 - -

Inverse Diode

Inverse diode forward voltage VSD - 1 - V IF = 5*3.5A, tm = 300 µS, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition Semiconductor Group Page 4 02.12.1998,

Block Diagramm Terms Inductive and overvoltage output clamp

RL V DZ IIN 3

D IN

1 ID VDS Vbb HITFET S

RCC

CC5V4SIN VCC HITFET

The ground lead impedance of R Short circuit behaviourCC

should be as low as possible V IN

Input circuit (ESD protection) ID(SCp) I

I D(Lim) IN D ESD-ZDI Sourcet0tmt1t2t0: Turn on into a short circuit ESD zener diodes are not designed tm: Measurementpoint for ID(lim) for DC current > 2 mA @ VIN>10V. t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.

Semiconductor Group Page 5 02.12.1998

,

Maximum allowable power dissipation On-state resistance P = f(T ) RON = f(Tj); ID=3.5A; V =10Vtot c IN

BTS 917 55 200 W mΩ 35 125 max. 30 typ. 15 5000020 40 60 80 100 120 °C 160 -50 -25 0 25 50 75 100 °C 150 150 Tj

On-state resistance Typ. input threshold voltage RON = f(Tj); ID= 3.5A; VIN=5V VIN(th) = f(Tj); ID=0,7A; VDS=12V

250 2.2 mΩ V 200 1.8 175 1.6 max. 1.4 150 1.2 typ. 1.0 0.8 0.6 0.4 25 0.2 0 0.0 -50 -25 0 25 50 75 100 °C 150 -50 -25 0 25 50 75 100 °C 150 Tj Tj

Semiconductor Group Page 6 02.12.1998

RDS(on) Ptot VIN(th) RDS(on),

Typ. transfer characteristics Typ. short circuit current ID = f(VIN); VDS=12V; Tj=25°C IDlim = f(Tj); RCC=0Ω, VDS=12V Parameter: VIN

40 60

A

A 10V 8V 20 30 6V 10 4V 3V000246V10 -50 -25 0 25 50 75 100 °C 150 VIN Tj

Typ. output characteristic Safe Operating Area ID = f(VDS); Tj=25°C ID(SC) = f(VDS); Tj=25°C Parameter: VIN

40 60 10V

A A

6V 40 20 5V 30 4V Vin=3V024V80010 20 30 V 50 VDS VDS

Semiconductor Group Page 7 02.12.1998

ID ID ID(SC) ID,

Typ. current limit versus RCC Typ. current sense characteristics ID(lim) = f(RCC); Tj=25°C VCC = f(ID); VIN=10V Parameter: VIN Parameter: RCC, Tj

50 0.50 10V 18 Ohm mV 47 Ohm 125°C

A

0.40 no Rcc 10 Ohm 0.35 30 0.30 0.25 25°C 20 0.20 5V 0.15 10 0.10 0.05 10 0 10 1 102Ω10 3 0.0004812 16 20 24 A 30 RCC ID

Transient thermal impedance ZthJC = f(tP) Parameter: D=tP/T

10 1 K/W D=0.5 10 0 0.2 0.1 0.05 10 -1 0.02 0.01 0.005 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 100s10 2 tP

Semiconductor Group Page 8 02.12.1998

RthJC ID

VCC

,

Application examples: Current Sense Features and Status Signals

IN D µC HITFET V CC S bb V RCC CC

IN

open Vcc load thermal Vcc shutdown reached triptemperature

The accuray of Vcc is at each

temperature about ±10 %

Status signal of thermal shutdown by

monitoring input current RSt IN D µC V HITFETIN V CC S bb ∆ V

VIN

thermal shutdown ∆V = RST *IIN(3)

Semiconductor Group Page 9 02.12.1998

,

Package and ordering code

all dimensions in mm Ordering code: Q67060-S6700-A4 Ordering Code: Q67060-S6700-A2 Ordering Code: Q67060-S6700-A3 Semiconductor Group Page 10 02.12.1998, Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Semiconductor Group Page 11 02.12.1998

]
15

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DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continu