Download: Smart Highside Power Switch One Channel: 20mΩ

Smart Highside Power Switch One Channel: 20mΩ Product Summary Package On-state Resistance RON 20mΩ TO-220-5-11 TO-263-5-2 TO-220-5-12 Operating Voltage Vbb(on) 4.75 ... 41V Nominal load current IL(ISO) 21A Current limitation IL(lim) 65A Standard SMD Straight General Description • N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. • Fully protected by embedded protection functions. Application • µC compatible power switch for 5V, 12 V and 24 V DC applications • All types of resistive, inductive and capaci...
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Smart Highside Power Switch One Channel: 20mΩ Product Summary Package

On-state Resistance RON 20mΩ TO-220-5-11 TO-263-5-2 TO-220-5-12 Operating Voltage Vbb(on) 4.75 ... 41V Nominal load current IL(ISO) 21A Current limitation IL(lim) 65A Standard SMD Straight

General Description

• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. • Fully protected by embedded protection functions.

Application

• µC compatible power switch for 5V, 12 V and 24 V DC applications • All types of resistive, inductive and capacitve loads • Most suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits

Basic Funktions

• Very low standby current • Optimized static electromagnetic compatibility (EMC) • µC and CMOS compatible • Fast demagnetization of inductive loads • Stable behaviour at undervoltage

Protection Functions

• Short circuit protection Vbb • Current limitation • Overload protection • Thermal shutdown • Overvoltage protection (including load dump) with external GND-resistor Logic • Reverse battery protection with external GND-resistor IN with • Loss of ground and loss of Vbb protection protection • Electrostatic discharge (ESD) protection functions OUT Load

PROFET GND Infineon Technologies AG Page 1 of 12 2001-June-27

, Functional diagram overvoltage gate current limit VBB protection control + internal charge voltage supply logic pump clamp for inductive load

OUT

temperature sensor IN ESD LOAD

GND PROFET

Pin Definitions and Functions Pin configuration (top view) Pin Symbol Function 1 GND Logic ground Tab = VBB 2 IN Input, activates the power switch incase of logical high signal3VPositive power supply voltagebb The tab is shorted to pin34N.C. Not connected12(3) 4 5 GND IN NC OUT 5 OUT Output to the load Tab V Positive power supply voltagebb The tab is shorted to pin 3 Infineon Technologies AG Page 2 of 12 2001-June-27, Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 5) Vbb 43 V Supply voltage for full short circuit protection Vbb 34 V Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoad dump3) 60 V RI2)= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 5) IL self-limited A Operating temperature range Tj -40 ...+150 °C Storage temperature range Tstg -55 ...+150 Power dissipation (DC) ; TC≤25°C Ptot 125 W Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (see diagram, p.8) IL(ISO) = 21 A, RL= 0 Ω: E4)AS=0.7J: ZL 2.1 mH Electrostatic discharge capability (ESD) IN: VESD 1.0 kV (Human Body Model) Out to all other pins shorted: 8.0 acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) IIN ±2.0 mA see internal circuit diagrams page 7 Thermal resistance chip - case: RthJC ≤ 1 K/W junction - ambient (free air): RthJA ≤ 75 SMD version, device on pcb5): ≤ 33 1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection. A resistor for the protection of the input is integrated. 2) RI = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) EAS is the maximum inductive switch off energy 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 3 2001-June-27,

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Vbb (pin3) to OUT (pin5)); IL = 2 A Vbb≥7V: Tj=25 °C: RON - 15 20 mΩ Tj=150 °C: 28 37 see diagram page 9 Nominal load current (pin 3 to 5) IL(ISO) 17 21 - A ‘ISO 10483-1, 6.7:VON=0.5V, TC=85°C Output current (pin 5) while GND disconnected or IL(GNDhigh) - - 2 mA GND pulled up6), Vbb=30 V, VIN= 0, see diagram page 7 (not tested specified by design) Turn-on time IN to 90% VOUT: ton 40 90 200 µs Turn-off time IN to 10% VOUT: toff 40 110 250 RL = 12 Ω, Slew rate on dV /dton 0.1 - 1 V/µs 10 to 30% VOUT, RL = 12 Ω, Slew rate off -dV/dtoff 0.1 - 1 V/µs 70 to 40% VOUT, RL = 12 Ω, 6) not tested specified by design Infineon Technologies AG Page 4 2001-June-27, Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Operating Parameters Operating voltage Tj =-40°C Vbb(on) 4.75 - 41 V Tj =+25°C 4.75 - 43 Tj =+105°C6) 4.75 - 43 Tj =+150°C 5.0 - 43 Overvoltage protection7) Tj =-40°C: Vbb(AZ) 41 - - V I bb = 40 mA Tj =+25...+150°C: 43 47 52 Standby current (pin 3) 8) Tj=-40...+25°C: Ibb(off) - 5 10 µA Tj=+105°C6): - - 10 VIN=0 see diagram page 9 Tj=+150°C: - - 25 Off-State output current (included in Ibb(off)) IL(off) - 1.5 10 µA VIN=0 Operating current (Pin 1)9), VIN=5 V, IGND - 2 4 mA Protection Functions Current limit (pin 3 to 5) IL(lim) (see timing diagrams, page 9) Tj =-40°C: - - 85 A Tj =25°C: - 65 - Tj =+150°C: 40 - - Repetitive short circuit current limit IL(SCr) - 55 - A Tj = Tjt (see timing diagrams, page 10) Thermal shutdown time10)11) Tj,start =25°C: Toff(SC) - 14 - ms (see timing diagram on page 10) Output clamp (inductive load switch off) ;Tj =-40°C: 41 - - V at VOUT = Vbb - VON(CL), IL= 40 mA Tj=25..150°C: VON(CL) 43 47 52 Thermal overload trip temperature Tjt 150 - - °C Thermal hysteresis ∆Tjt - 10 - K Reverse battery (pin 3 to 1) 12) -Vbb - - 32 V Reverse battery voltage drop (VOUT > Vbb) -VON(rev) IL = -2A Tj =+150°C: - 540 - mV 7) see also VON(CL) in table of protection functions and circuit diagram page 7 8) Measured with load, typ. 40 µA without load. 9) Add IIN, if VIN>5.5 V 10) not tested specified by design 11) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 12) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 1 and circuit page 7). Infineon Technologies AG Page 5 2001-June-27, Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Input13) Input resistance see circuit page 7 RI 2.5 3.8 6.5 kΩ Input turn-on threshold voltage VIN(T+) 1.2 - 2.2 V Input turn-off threshold voltage VIN(T-) 0.8 - - V Input threshold hysteresis ∆ VIN(T) - 0.3 - V Off state input current (pin 2) VIN = 0.4 V: IIN(off) 1 - 15 µA On state input current (pin 2) VIN = 5 V: IIN(on) 4.5 12 24 µA 13) If a ground resistor RGND is used, add the voltage drop across this resistor. Infineon Technologies AG Page 6 2001-June-27,

Overvolt. and reverse batt. protection Terms

+ Vbb Ibb Vbb Leadframe, 3 VZ2VRRIIIN bb IN IN IN IL VON Logic PROFET OUT25OUT

V

IN V GND Z1 PROFETIVGNDGND OUTRRLoadGND R GND Signal GND Load GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RI= 3.5 kΩ typ.

Input circuit (ESD protection) In case of reverse battery the load current has to be

limited by the load. Temperature protection is not active

R

IN I

GND disconnect

ESD-ZD I II

GND

Vbb The use of ESD zener diodes as voltage clamp at DC

OUT

conditions is not recommended. IN PROFET

Inductive and overvoltage output clamp GND V

+ V bb VIN V bb GND

VZ

Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . V ON

OUT

GND PROFET GND disconnect with GND pull up VON clamped to 47 V typ. Vbb IN PROFET OUT

GND

V V Vbb IN GND Any kind of load. If VGND > VIN - VIN(T+) device stays off

Infineon Technologies AG Page 7 2001-June-27

,

Vbb disconnect with charged inductive Inductive load switch-off energy

load dissipation E bb

EAS

Vbb ELoad high Vbb IN PROFET OUT IN PROFET OUT GND = LEL

GND Z

V L{bbER

RL

For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Energy stored in load inductance: Consider at your PCB layout that in the case of Vbb dis- 1 2 connection with energized inductive load all the load current EL = /2·L·IL flows through the GND connection. While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: IL· L EAS= 2 R (Vbb + |VOUT(CL)|) ln IL·RL (1+ |V )· L OUT(CL)|

Maximum allowable load inductance for

a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0ΩL[mH] 0.10510 15 20 25 30 35 IL [A]

Infineon Technologies AG Page 8 2001-June-27

,

Typ. on-state resistance

RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mΩ] Tj = 150°C 25°C -40°C357930 40 Vbb [V]

Typ. standby current

Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] -50 0 50 100 150 200 Tj [°C]

Infineon Technologies AG Page 9 2001-June-27

,

Timing diagrams Figure 2b: Switching a lamp, IN

Figure 1a: V turn on: IN bb

VOUT

V bb

I L

t

V OUT

Figure 3a: Short circuit shut down by overtemperature, reset by cooling proper turn on under all conditions IN other channel: normal operation Figure 2a: Switching a resistive load, IL turn-on/off time and slew rate definition: IL(lim)

IN

I L(SCr)

VOUT

toff(SC) t 90% Heating up may require several milliseconds, depending on t on dV/dtoff external conditions dV/dton t Figure 4a: Overtemperature: off 10% Reset if Tj IN IL V OUT t

T J

t

Infineon Technologies AG Page 10 2001-June-27

,

Package and Ordering Code Straight: P-TO220-5-12 All dimensions in mm Sales code BTS441T S Standard (=staggered): P-TO220-5-11 Ordering code: Q67060-S6112-A4 Sales code BTS441T 10 ±0.2 A Ordering code: Q67060-S6112-A2 9.8 ±0.15 B

8.5 1) 4.4 10 3.7±0.2 -0.15 1.27 ±0.1

A

9.8 ±0.15 8.5 1) 4.4 3.7-0.15 1.27±0.1 0.05 0.05 C 0...0.15 0.5 ±0.16x 0.8 ±0.1 2.4 C 1.7 0.25MABC0...0.15 0.5 ±0.1 0.8 ±0.1 2.4 Typical 1.7 3.9 ±0.4 1) All metal surfaces tin plated, except area of cut. 0.25MAC8.4 ±0.4 Published by Infineon technoligies AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 ünchen 1) Typical Infineon technologies AG 2001. All Rights Reserved All metal surfaces tin plated, except area of cut. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. The information describes a type of component and shall not be considered as warranted characteristics. The characteristics for

SMD: P-TO263-5-2 (tape&reel) which Infineon technologies grants a warranty will only be specified Sales code BTS441T G in the purchase contract. Terms of delivery and rights to change

design reserved. For questions on technology, delivery and prices

Ordering code: Q67060-S6112-A3 please contact the Offices of Semiconductor Group in Germany or

the Infineon technologies Companies and Representatives worldwide (see address list). Due to technical requirements 10 ±0.2 4.4 components may contain dangerous substances. For information on 9.8 ±0.15 1.27 ±0.1 the type in question please contact your nearest InfineonABtechnologies Office, Semiconductor Group. Infineon technologies 8.5 1) 0.1 AG is an approved CECC manufacturer. 0.05 Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By 2.4 agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be 0...0.15 expressly authorised for such purpose! Critical components14) of 5x0.8 the Semiconductor Group of Infineon technologies AG, may only be±0.1 0.5 ±0.1 4x1.7 used in life supporting devices or systems 15) with the express 8˚ m written approval of the Semiconductor Group of Infineonax. 0.25MAB0.1 technologies AG. 1) Typical All metal surfaces tin plated, except area of cut. 14) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 15) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

Infineon Technologies AG Page 11 2001-June-27

(15) 17±0.3 15.65±0.3 9.25 ±0.2 1±0.3 13.4 1) 81) 8.6 ±0.3 2.8±0.2 1.3 ±0.3 10.2 ±0.3 4.7±0.5 2.7±0.3 3.7±0.3 9.25 ±0.2 17±0.3 15.65±0.3 13.4 1) 11±0.5 2.8±0.2 13 ±0.5 9.25 ±0.2]
15

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