Download: PROFET® BTS 432 D2 Smart Highside Power Switch

PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1) VLoad dump 80 V • Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V• Short-circuit protection V • bb (operation) 4.5 ... 42 V Current limitation • Vbb (reverse) -32 V Thermal shutdown • R 38 mΩ Diagnostic feedback ON • Open load detection in ON-state IL(SCp) 44 A • CMOS compatible input IL(SCr) 35 A • Electrostatic discharge (ESD) protection IL(ISO) 11 A • Loss of ground and loss of Vbb protection2) • Overvoltage protection • Undervoltage and overvoltage shutdown...
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PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary

• Load dump and reverse battery protection1) VLoad dump 80 V • Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V• Short-circuit protection V • bb (operation) 4.5 ... 42 V Current limitation • Vbb (reverse) -32 V Thermal shutdown • R 38 mΩ Diagnostic feedback ON • Open load detection in ON-state IL(SCp) 44 A • CMOS compatible input IL(SCr) 35 A • Electrostatic discharge (ESD) protection IL(ISO) 11 A • Loss of ground and loss of Vbb protection2) • Overvoltage protection • Undervoltage and overvoltage shutdown with auto- restart and hysteresis55

Application 5

• 1 µC compatible power switch with diagnostic feedback 1 Straight leads SMD Standard for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Rbb + Vbb 3 Voltage Overvoltage Current Gate source protection limit protection V Logic Voltage Charge pump Limit for OUT unclamped 5 sensor Level shifter ind. loads Temperature 2 IN Rectifier sensor Open load Load ESD Logic detection 4 ST Short circuit detection GND PROFET Signal GND Load GND 1) No external components required, reverse load current limited by connected load. 2) Additional external diode required for charged inductive loads

Semiconductor Group Page 1 of 14 1999-Mar.-22

, Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT O Output to the load (Load, L) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) Vbb 63 V Load dump protection VLoadDump = UA + Vs, UA = 13.5 V Vs3) 66.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) IL self-limited A Operating temperature range Tj -40 ...+150 °C Storage temperature range Tstg -55 ...+150 Power dissipation (DC) Ptot 125 W Inductive load switch-off energy dissipation, single pulse Tj=150 °C: EAS 1.7 J Electrostatic discharge capability (ESD) VESD 2.0 kV (Human Body Model) Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) IIN ±5.0 mA Current through status pin (DC) IST ±5.0 see internal circuit diagrams page 6... Thermal resistance chip - case: RthJC ≤ 1 K/W junction - ambient (free air): RthJA ≤ 75 SMD version, device on pcb4): ≤ tbd 3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group Page 2 1999-Mar.-22,

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON - 30 38 mΩ Tj=150 °C: 55 70 Nominal load current (pin 3 to 5) IL(ISO) 9 11 - A ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or IL(GNDhigh) - - 1 mA GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: ton 50 160 300 µs Turn-off time to 10% VOUT: toff 10 - 80 RL = 12 Ω, Tj =-40...+150°C Slew rate on dV /dton 0.4 - 2.5 V/µs 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off -dV/dtoff 1 - 5 V/µs 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Vbb(on) 4.5 - 42 V Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.4 - 4.5 V Undervoltage restart Tj =-40...+150°C: Vbb(u rst) - - 4.5 V Undervoltage restart of charge pump Vbb(ucp) - 6.5 7.5 V see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) - 0.2 - V ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 - 52 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 42 - - V Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) - 0.2 - V Overvoltage protection6) Tj =-40°C: Vbb(AZ) 60 - - V Ibb=40 mA Tj =25...+150°C: 63 67 Standby current (pin 3) Tj=-40...+25°C: Ibb(off) - 12 25 µA VIN=0, IST=0, Tj=150°C: - 18 60 Leakage output current (included in Ibb(off)) IL(off) - 6 - µA VIN=0 Operating current (Pin 1)7), VIN=5 V IGND - 1.1 - mA 5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V 6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. 7) Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 1999-Mar.-22, Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: - - 74 A Tj =25°C: - 44 - Tj =+150°C: 24 - - Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) 22 35 - A Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) 80 - 400 µs min value valid only, if input "low" time exceeds 30 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA VON(CL) - 58 - V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) - 8.3 - V Thermal overload trip temperature Tjt 150 - - °C Thermal hysteresis ∆Tjt - 10 - K Inductive load switch-off energy dissipation9), EAS - - 1.7 J Tj Start = 150 °C, single pulse Vbb = 12 V: ELoad12 1.3 Vbb = 24 V: ELoad24 1.0 Reverse battery (pin 3 to 1) 10) -Vbb - - 32 V Integrated resistor in Vbb line Rbb - 120 - Ω Diagnostic Characteristics Open load detection current Tj=-40 °C: IL (OL) 2 - 900 mA (on-condition) Tj=25..150°C: 2 - 750 8) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4) 9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.

V

EAS= 1/2 * L * I L * ( ON(CL) V - V ), see diagram page 8ON(CL) bb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group Page 4 1999-Mar.-22, Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Input and Status Feedback11) Input turn-on threshold voltage VIN(T+) 1.5 - 2.4 V Tj =-40..+150°C: Input turn-off threshold voltage VIN(T-) 1.0 - - V Tj =-40..+150°C: Input threshold hysteresis ∆ VIN(T) - 0.5 - V Off state input current (pin 2) VIN = 0.4 V: IIN(off) 1 - 30 µA On state input current (pin 2) VIN = 3.5 V: IIN(on) 10 25 50 µA Status invalid after positive input slope td(ST SC) 80 200 400 µs (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope td(ST) 350 - 1600 µs (open load) Tj=-40 ... +150°C: Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: VST(high)12) 4.4 5.1 6.5 V Tj =-40...+150°C, IST = +1.6 mA: VST(low) - - 0.4 Max. status current for current source (out): -IST - - 0.25 mA valid status output, current sink (in) : +IST13) - - 1.6 Tj =-40...+150°C 11) If a ground resistor RGND is used, add the voltage drop across this resistor. 12) VSt high ≈ Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown Semiconductor Group Page 5 1999-Mar.-22,

Truth Table

Input- Output Status level level 432 432 432 D2 E2/F2 I2 NormalLLHHHoperationHHHHHOpen load L 14) HHLHHLLHShort circuitLLHHHto GNDHLLLLShort circuitLHHHLto VbbHHH(L15)) H (L15)) H Overtem- LLLLLperatureHLLLLUnder- L L L16) H L16) voltageHLL16) H L16) OvervoltageLLLHLHLLHLL= "Low" Level H = "High" Level

Terms Status output

IbbV3Logic I IN

V

IN bb2ISTL VON I PROFET

OUT

ST 5 ST ESD- 4 ZD V IN VST GND GNDV1bb IGND VOUT R Zener diode: 6.1 V typ., max 5 mA, VGND Logic5Vtyp, ESD zener diodes are not designed for continuous current

Short Circuit detection

Fault Condition: VON > 8.3 V typ.; IN high

Input circuit (ESD protection)

+ V R bb

I IN

ESD- V ZDI1 ZD ONI2 II GND OUT Logic Short circuit unit detection ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current 14) Power Transistor off, high impedance 15) Low resistance short Vbb to output may be detected by no-load-detection 16) No current sink capability during undervoltage shutdown

Semiconductor Group Page 6 1999-Mar.-22

,

Inductive and overvoltage output clamp GND disconnect

+ Vbb VZ3VVON IN bb PROFET OUT

OUT ST

GND 4 GNDVVV1VVON clamped to 58 V typ. bb IN ST GND

Overvolt. and reverse batt. protection Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available. + Vbb GND disconnect with GND pull up V RbbZ RIN 3

IN

Vbb Logic IN2

VOUT

R ST PROFET

OUT

ST 5 GND PROFET ST

GND

R 1GND Signal GNDVVRbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add V IN ST

V

bb GND RGND, RIN, RST for extended protection Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.

Open-load detection

ON-state diagnostic condition: VON < RON * IL(OL); IN Vbb disconnect with charged inductive high load + Vbb 3 high VIN bb V PROFET OUTON 5

ON ST GND

OUT 1 Logic Open load unit detection V bb high VIN bb PROFET OUT

ST GND V

bb

Semiconductor Group Page 7 1999-Mar.-22

,

Inductive Load switch-off energy

dissipation E bb

EAS

ELoad

V

IN bb PROFET OUT = STEL

GND

E R Energy dissipated in PROFET EAS = Ebb + EL - ER. E 2Load < EL, EL = 1/2 * L * IL

Semiconductor Group Page 8 1999-Mar.-22

,

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground

Type BTS 432D2 432E2 432F2 432I2 Logic versionDEFI Overtemperature protection Tj >150 °C, latch function17)18) X X X Tj >150 °C, with auto-restart on cooling X Short-circuit to GND protection

switches off when VON>8.3 V typ.17) XXXX(when first turned on after approx. 200 µs)

Open load detection

in OFF-state with sensing current 30 µA typ. X in ON-state with sensing voltage drop acrossXXXpower transistor

Undervoltage shutdown with auto restartXXXX Overvoltage shutdown with auto restartXXXX Status feedback for

overtemperatureXXXXshort circuit to GNDXXXXshort to Vbb -19) -19) -19) X open loadXXXXundervoltage X - - X overvoltage X - - X

Status output type

CMOSXXOpen drainXX

Output negative voltage transient limit

(fast inductive load switch off) to Vbb - VON(CL) XXXX

Load current limit

high level (can handle loads with high inrush currents) X X medium level X low level (better protection of application) X 17) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short Vbb to output may be detected by no-load-detection

Semiconductor Group Page 9 1999-Mar.-22

,

Timing diagrams

Figure 2b: Switching an inductive load Figure 1a: Vbb turn on:

IN IN

t d(bb IN) Vbb td(ST)

ST

*)

V

OUT V

OUT A

ST CMOS I

L

t IL(OL) A t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit,

IN IN ST ST V

OUT V

OUT

td(SC)

I

L I

L

t t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.

Semiconductor Group Page 10 1999-Mar.-22

, Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (TjIN IN ILIL(SCp) ST IL(SCr)

V OUT ST T J

t t Heating up may require several milliseconds , Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and TjIN IN ST t ST d(ST) V OUT

V OUT

I L **)

I

L opentt**) current peak approx. 20 µs

Semiconductor Group Page 11 1999-Mar.-22

, Figure 5b: Open load: detection in ON-state, open Figure 6b: Undervoltage restart of charge pump load occurs in on-state VON [V] V VON(CL)on

IN

off td(ST OL1) td(OL ST2)

ST V

V bb(over)off

OUT

V V bb(u rst) bb(o rst) I normal open normal Vbb(u cp)

L V

bb(under) on t Vbb Vbb [V] td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage:

IN IN

V Vbb ON(CL) Vbb(over) Vbb(o rst) Vbb

V

V bb(u cp) bb(under) Vbb(u rst)

V OUT VOUT ST

ST CMOStt

Semiconductor Group Page 12 1999-Mar.-22

,

Package and Ordering Code

All dimensions in mm Standard TO-220AB/5 Ordering code TO-220AB/5, Option E3043 Ordering code BTS 432 D2 Q67060-S6201-A2 BTS 432 D2 E3043 Q67060-S6201-A4 SMD TO-220AB/5, Opt. E3062 Ordering code BTS432D2 E3062A T&R: Q67060-S6201-A5 Semiconductor Group Page 13 1999-Mar.-22, Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, D-81541 München Siemens AG 1999. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components20) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems21) with the express written approval of the Semiconductor Group of Siemens AG. 20) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 21) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

Semiconductor Group Page 14 1999-Mar.-22

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DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continuou
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continuou